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TSM2N7002 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5 RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5 Features Advanced trench process technology High density cell design for low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2N7002CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta > 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o o Symbol VDS VGS ID IDM PD Limit 60 20 115 800 225 1.8 +150 - 55 to +150 Unit V V mA mA mW MW/ C o o o C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rja Limit 5 417 Unit S o C/W TSM2N7002 1-3 2003/12 rev. B Electrical Characteristics Tj = 25 C unless otherwise noted o Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Conditions VGS = 0V, ID = 10uA VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA VDS = VGS, ID = 250uA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS 2V, VGS = 10V Symbol Min 60 --1.0 --500 Typ -------- Max -7.5 13.5 2.5 1.0 100 -- Unit V BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) V uA nA mA Dynamic Turn-On Rise Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDD = 25V, RL = 50, ID = 500mA, VGEN = 10V, RG = 25 VDS = 25V, VGS = 0V, f = 1.0MHz tr tf Ciss Coss Crss -------50 25 5 20 40 ---pF nS Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 115mA, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% IS VSD ---1.3 115 1.5 mA V TSM2N7002 2-3 2003/12 rev. B SOT-23 Mechanical Drawing A B F SOT-23 DIMENSION DIM A MILLIMETERS MIN MAX 2.88 0.39 1.78 0.51 1.50 1.04 0.07 2.91 0.42 2.03 0.61 1.70 1.08 0.09 INCHES MIN MAX 0.113 0.015 0.070 0.020 0.061 0.041 0.003 0.115 0.017 0.080 0.024 0.069 0.043 0.004 E B C D E F G G D C TSM2N7002 3-3 2003/12 rev. B |
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