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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ( Ta= 25C ) UNIT dBm dB A % dBc A C MIN. 38.5 5.0 -42 TYP. MAX. 39.5 6.0 3.4 22 -45 3.4 4.4 4.4 80 CONDITIONS VDS= 9V f= 10.7 to 11.7GHz add IM3 IDS2 Tch Two-Tone Test Po=28. 0dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 4.0 A VDS= 3V IDS= 120mA VDS= 3V VGS= 0V IGS= -120A Channel to Case UNIT mS V A V C/W MIN. -2.0 -5 TYP. 2400 -3.5 8.0 1.6 MAX. -5.0 2.5 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. May 2007 TIM1011-8L ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 10.4 60 175 -65 to +175 PACKAGE OUTLINE (2-11C1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1011-8L RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=9V 41 40 39 38 37 IDS3.4A Pin=33.5 dBm 10.7 11.2 11.7 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 42 freq.=11.7GHz 41 40 39 VDS=9V IDS3.4A Pout 40 30 Pout(dBm) 37 36 35 34 33 27 29 31 33 35 37 20 add 10 0 Pin(dBm) 3 add(%) 38 TIM1011-8L Power Dissipation(PT) vs. Case Temperature(Tc) 60 PT(W) 30 0 0 40 80 Tc( C ) 120 160 200 IM3 vs. Output Power Characteristics -10 VDS=9V -20 freq.=11.7GHz f=5MHz -30 IM3(dBc) -40 -50 -60 23 25 27 29 31 33 Pout(dBm) @Single carrier level 4 |
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