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| Advance Product Information October 29, 2004 Ku Band 2W Packaged Amplifier * * * * * * * * * Package Dimensions 6.4 x 6.4 x 3.0 mm TGA8658-EPU-SG Key Features Frequency Range: 13-17 GHz Optimized for VSAT band (13.75-14.5GHz) 33 dB Nominal Gain Typical > 33.5 dBm Psat in VSAT band @ 7V Bias 5-8 V @ 680 mA (Quiescent) 0.5 m 3MI pHEMT Technology Integrated power detector 6 lead package Package Dimensions: 6.4 x 6.4 x 3.0 mm (0.3 x 0.3 x 0.1 in ) VSAT Point-to-Point Primary Applications Fixtured Measured Performance Bias Conditions: Vd = 7 V, Idq =680 mA 40 35 30 Gain * * 30 20 10 0 -10 -20 Output Input Gain (dB) 25 20 15 10 5 0 12 13 14 15 16 17 18 19 Frequency (GHz) 36 34 -30 1400 1200 1000 800 600 Pout (dBm) & Gain (dB) 28 26 24 IDS Pout 400 200 0 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 22 20 18 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. IDS (mA) Data taken @ 14.5 GHz 32 30 Gain Return Loss (dB) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information October 29, 2004 TGA8658-EPU-SG TABLE I MAXIMUM RATINGS 1/ Symbol Vd Vg Idq | Ig | PIN PD TCH TM TSTG Parameter Drain Supply Voltage Gate Supply Voltage Range Drain Supply Current (Quiescent) Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 8V -5V to 0V 1.3 A 18 mA 21 dBm 5 W + (85C- TB)/13 150 C 320 C -65 to 150 C Notes 2/ 2/ 2/ 2/ 3/ 4/ 5/ 1/ 2/ 3/ 4/ 5/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. TB = Package backside temperature in degrees C. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 7 V, Idq = 680 mA) SYMBOL Gain IRL ORL PWR PARAMETER Small Signal Gain Input Return Loss Output Return Loss Output Power @ Pin = +5 dBm TEST CONDITION F = 13 -17 GHz F = 13 -17 GHz F = 13 -17 GHz F = 13 -15 GHz TYPICAL 33 10 10 34 UNITS dB dB dB dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information Measured Fixtured Data Bias Conditions: Vd = 7 V, Idq = 680 mA October 29, 2004 TGA8658-EPU-SG 40 35 30 Gain 30 20 10 0 -10 -20 Output Input Gain (dB) 25 20 15 10 5 0 12 13 14 , -30 15 16 17 18 19 Frequency (GHz) 36 34 Pout (dBm) 32 30 13.5 GHz 28 26 24 -10 -8 -6 -4 -2 0 2 4 6 14GHz 14.5 15GHz 15.5GHz 8 10 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. Return Loss (dB) 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information Measured Fixtured Data Bias Conditions: Vd = 7 V, Idq = 680 mA October 29, 2004 TGA8658-EPU-SG 1320 1220 1120 Ids (mA) 1020 920 820 720 620 -8 -6 -4 -2 0 2 4 6 8 10 13.5 GHz 14GHz 14.5 15GHz 15.5GHz Pin (dBm) 36 34 Power Gain (dB) 32 30 28 26 24 22 20 -8 -6 -4 -2 0 2 4 6 8 10 13.5 GHz 14GHz 14.5 15GHz 15.5GHz Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information Measured Fixtured Data Bias Conditions: Vd = 7 V, Idq = 680 mA October 29, 2004 TGA8658-EPU-SG 20 10 IMD3 Level (dBm) 0 -10 -20 -30 -40 -50 10 12 14 16 18 20 22 24 26 28 30 32 13.5GHz 14GHz 14.5GHz 15GHz Output Power Per Tone (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information October 29, 2004 TGA8658-EPU-SG Packaged Dimensional Drawing TGA8658 - SG Dimensions in inches Top View Vref RF In Vd 0.012 typ RF out 0.160 typ Vg Vdet 0.250 sq 0.010 0.060, 6 pl Side View R=0.010 2 pl 0.006 0.030 0.060 typ Bias Procedure 1. 2. 3. 4. 5. Make sure no RF power is applied to the device before continuing. Pinch off device by setting VG to -1.5V. Raise Vd to 7.0V while monitoring drain current. Raise Vg until drain current reaches 680 mA. Apply RF power. 0.020 ref (2) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information October 29, 2004 TGA8658-EPU-SG Power Detector +5V 40K: 40K: External Vref Vdet TGA8658 5pF 50: DUT RF out TGA8658 Power Detector @ 14GHz 0.6 0.5 Vref-Vdet (V) 0.4 0.3 0.2 0.1 0 0 (20 dBm) 10 (26 dBm) 20 (29.5 dBm) (32 dBm) (34 dBm) 30 40 50 60 sqrt Pout (mW^0.5) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information October 29, 2004 TGA8658-EPU-SG Assembly of a TGA8658-EPU-SG Surface Mount Package onto a Motherboard Manual Assembly for Prototypes 1. Clean the motherboard or the similar module with Acetone. Rinse with alcohol and DI water. Allow the circuit to fully dry. 2. To improve the thermal and RF performance, we recommend a heat sink attach to the bottom of the package and apply indium alloy SN63 solder or Tin Lead solder to the bottom of TGA8658. 3. Apply Tin Lead solder to each pin of TGA8658. 4 Clean the assembly with alcohol. High Volume Assembly of the Package The TGA8658EPU is a custom leaded packaged component. High volume assembly can be performed using standard assembly processes including solder printing such as stencil solder printing. Pick-and-place using a standard machine such as a MRSI machine, and solder reflow using a "Sikama Reflow System" using typical zone temperatures: 120, 175, 195, and 215 degrees Celsius at 15 second intervals. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 |
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