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Advance Product Information
June 30, 2004
7 W Ka Band Packaged Power Amplifier
TGA4915-EPU-CP
Key Features and Performance
* * * * * * * Frequency Range: 26 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss 0.25m pHEMT Technology Bias Conditions: Vd = 6V, Idq = 4.2 A Package Dimensions: 0.526 x 0.650 x 0.073 in
Primary Applications
Product Description
The TriQuint TGA4915-EPU-CP is a compact 7 Watt High Power Amplifier for Ka band applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process.
Power (dBm)
* *
Satellite Ground Terminals Point to Point
Preliminary Measured Performance
Bias Conditions: Vd=6 V Idq=4.2 A
40 39 38 37 36 35 34 33 32 31 30 24 25 26 27 28 29 30 31 32
Psat P1dB
The TGA4915 provides a nominal 38 dBm of output power at an input power level of 21 dBm with a small signal gain of 22 dB. The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio.
Frequency (GHz)
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 24 25 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 28 29 30 31 32 33 34
Output
Input
26
27
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
Gain (dB)
Advance Product Information
June 30, 2004
TGA4915-EPU-CP
TABLE I MAXIMUM RATINGS Symbol
V
+ -
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value
8V -3V TO 0V 8A 124 mA 27 dBm 34 W 150 C 210 C -65 to 150 C
Notes
2/
V I
+
2/
| IG | PIN PD TCH TM TSTG
2/ 2/, 3/ 4/, 5/
1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. PD is the power dissipation allowed in order to reach a channel temperature of 150C with a package base temperature of 70C. When operated at this power dissipation with a baseplate temperature of 70C, the MTTF is 1.0E+6 hours. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ 5/
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 30, 2004
TGA4915-EPU-CP
TABLE II RF CHARACTERIZATION TABLE (TA = 25 qC, Nominal) (Vd = 6 V, Id = 4.2 A)
SYMBOL
PARAMETER
TEST CONDITION F = 26-31 GHz
TYPICAL
UNITS
Gain
Small Signal Gain
22
dB
IRL
Input Return Loss
F = 26-31 GHz
15
dB
ORL
Output Return Loss
F = 26-31 GHz
15
dB
PWR
Output Power @ P1dB
F = 26-31 GHz
38
dBm
TABLE III THERMAL INFORMATION*
Parameter
RJC Thermal Resistance (Channel to Backside of Package)
Test Conditions
VD = 6 V ID = 4.2 A PDISS = 25.2 W
TCH (qC)
R4JC (qC/W)
2.3
TM (hrs)
128
7.4 E+6
Note: Carrier at 70C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 44 W with 7 W RF power delivered to the load. Power dissipated is 37 W and the temperature rise in the channel is 85 C. Baseplate temperature must be reduced to 65 C to remain below the 150 C maximum channel temperature.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 30, 2004
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 4.2 A
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 24 25
TGA4915-EPU-CP
Output
Input
35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 28 29 30 31 32 33 34
26
27
Frequency (GHz)
40 39 38
Power (dBm)
37 36 35 34 33 32 31 30 24 25 26 27 28 29 30 31 32
Psat P1dB
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
Gain (dB)
Advance Product Information
June 30, 2004
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 4.2 A
40 36
TGA4915-EPU-CP
Output Power (dBm) & Gain (dB)
32 28 24 20 16 12 8 4 0 -10 -5 0 5 10 15 20 25
27GHz_Gain 31GHz_Gain
Input Power (dBm)
25GHz_Power 29GHz_Power 25GHz_Gain 29GHz_Gain 27GHz_Power 31GHz_Power
4
20
@ 30 GHz
3.8 3.6 3.4
Ids, Top Ids, Lower PAE
18 16 14
3 2.8 2.6 2.4 2.2 2 -10 -5 0 5 10 15 20 25
10 8 6 4 2 0
Pin(dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
PAE (%)
Ids(A)
3.2
12
Advance Product Information
June 30, 2004
TGA4915-EPU-CP
Package Pinout Diagram
9* 9'
9'
5) ,1
TGA4915
5) 287
9* 9'
9'
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 30, 2004
Mechanical Drawing

TGA4915-EPU-CP
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$#
Top View
"#( "!$ "
TGA4915
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0.073 +/- 0.005
LID
1.8542
.005
Side View
SUBSTRATE STACK .
Dimensioned in inches
0.0000
0. 8153
0.0028/ 0.0 0 24
0.000
0.032 +0.003/-0.002
DIMENSIONS IN INCHES
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 30, 2004
TGA4915-EPU-CP Assembly of a TGA4915-EPU-CP into a Module
Manual Assembly for Prototypes
1. Clean the module with Acetone. Rinse with alcohol and DI water. Allow the module to fully dry. 2. To improve the thermal and RF performance, we recommend attaching a heatsink to the bottom of the package. If the TGA4915 is mounted to the heatsink with mounting screws, we recommend an indium shim or other compliant material be inserted between the TGA4915 and the heatsink to reduce thermal contact resistance due to air gaps. The TGA4915 may also be attached to the heatsink using SN63 solder or any other Tin/Lead solder. The TGA4915 may also be mounted with DieMat DM6030HK conductive epoxy or similar thermally and electrically conductive epoxy. 3. The DC and RF interconnects may be gold bondwires or gold ribbons. The RF interconnects should be as short as possible. A minimum of two 1 mil wires are recommended for the RF Input, RF Output, Vg, and Vd1 and Vd3. Six bondwires are recommended for Vd2 and Vd4.
ORDERING INFORMATION PART TGA4915-EPU-CP PACKAGE STYLE CARRIER PLATE
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

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