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| TEKS5412X01 Silicon Photodetector with Logic Output Description TEKS5412 is a high sensitive photo Schmitt Trigger in a sideview molded plastic package with spherical lens. It is designed with an infrared filter to spectrally match to GaAs IR emitters (lp=950nm). The photodetector is case compatible to the TSKS5412 GaAs IR emitting diode, allowing the user to assemble his own optical sensor. Features D D D D D D D D D D D D D D Very high photo sensitivity Supply voltage range 4.5 to 16 V Low current consumption ( 2 mA ) Side view plastic package with lens Angle of half sensitivity = 30 TTL and CMOS compatible Open collector output Output signal inverted ( active "low" ) Case compatible with TSKS5412 Option X01: High rel. device for advanced applications Taped and reeled according to IEC 286 part 2 Packing AMMOPACK: 2,000 pcs Ordering code number: TEKS5412X01ASZ Visual inspection according to QSV 5610 14 355 Absolute Maximum Ratings Tamb = 25_C Parameter Supply Voltage Output Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Test Conditions Symbol VS1 Io PV Tj Tamb Tstg Tsd Value 18 20 100 100 -40...+85 -40...+100 260 Unit V mA mW C C C C t x 5 s, 2 mm from body Handling Precautions Connect a capacitor C of 100 nF between VS1 and ground ! Rev. 7, 13-Oct-98 1 (6) TEKS5412X01 Basic Characteristics Tamb = 25_C Parameter Supply Voltage Supply Current Irradiance for Threshold "On" Hysteresis Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Output Voltage High Level Output Current Test Conditions VS1 = 16 V l=950nm, VS1=5V VS1 = 5 V Symbol VS1 IS1 Eeon Eeoff/Eeon Min 4.5 32 Typ 2 50 80 30 920 600... 1020 0.2 Max 16 5 60 Unit V mA % deg nm nm 0.4 1 mW/cm2 lp l0.5 IOL=16mA, VS1=5V, Ee Eon VS1=VS2=16V, IF=0 VOL IOH mA V Switching Characteristics Tamb = 25_C Parameter Rise Time Fall Time Turn-On Time Turn-Off Time Switching Frequency Test Conditions VS1=VS2=5V, RL=1kW Ee=3*Eeon, l=950nm Symbol tr tf ton toff fsw Min Typ 100 20 1.5 3 200 Max Unit ns ns ms ms kHz Additional Tests D 100% inspection of body with infrared camera. test criteria: no cracks allowed D 100% functional test at Tamb = -40C test criteria: VOL > 4 V at Ee = 0 TSKS5412X01 / TEKS5412X01 matched (for Reference only) Parameters Input threshold current Hysteresis Output voltage Switching frequency Electrical setup Test Conditions VS1 = 5 V VS1 = 5 V IOL = 16 mA, IF > IFT VS1 = 5 V IF = 3 x IFT, RL = 1 kW VS1 = VS2 = 5 V VS2 = 5 V, tp > 40 ms, T > 50 ns Symbol IFT IFoff/IFon Min. Typ. 1.5 80 0.2 200 7 Max. Unit mA % V kHz 0.4 fsw ms Remark: Parameter tested with test fixture provided by Kostal (LENKWINKELSENSOR) 2 (6) Rev. A7, 13-Oct-98 TEKS5412X01 V S1 = 5 V 0 R G = 50 W tp IR-Diode = 0.01 T tp = 10 ms IF IS1 V S2 = 5 V R L = 1 kW IO VO Channel II Channel I 50 W 96 12153 Oscilloscope RL CL w 1 MW v 20 pF Figure 1. Test circuit 95 10819 IF o Channel I ton 50% toff 90% VO o Channel II tf tr 10% Figure 2. Pulse diagram Rev. 7, 13-Oct-98 3 (6) TEKS5412X01 Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 E e on rel - Relative Trigger Irradiation P V - Power Dissipation ( mW ) 100 75 50 RthJA 25 0 0 14845 20 40 60 80 100 14352 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -45 -30 -15 l = 950 nm VS=5V 0 15 30 45 60 75 90 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 3. Power Dissipation vs. Ambient Temperature 1.8 1.7 VS=5V RL=10W 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -45 -30 -15 0 Figure 6. Relative Trigger Irradiation vs. Ambient Temperature 0 10 20 30 I Srel - Relative Supply Current S rel - Relative Sensitivity 40 1.0 0.9 0.8 0.7 50 60 70 80 15 30 45 60 75 90 14353 0.6 0.4 0.2 0 0.2 0.4 0.6 14350 Tamb - Ambient Temperature ( C ) Figure 4. Relative Supply Current vs. Ambient Temperature Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 0.30 0.28 V - Output Voltage ( mV ) OL 0.26 0.24 0.22 0.20 0.18 0.16 0.14 -45 -30 -15 14351 VS=5V RL=1kW 0 15 30 45 60 75 90 Tamb - Ambient Temperature ( C ) Figure 5. Output Voltage vs. Ambient Temperature 4 (6) Rev. A7, 13-Oct-98 TEKS5412X01 Dimensions in mm 14308 Rev. 7, 13-Oct-98 5 (6) TEKS5412X01 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) Rev. A7, 13-Oct-98 |
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