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| SUM70N03-09CP Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.0095 @ VGS = 20 V 0.014 @ VGS = 4.5 V ID (A) 70 58 D D D D TrenchFETr Power MOSFET Optimized for High- or Low-Side New Low Thermal Resistance Package 100% Rg Tested APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-263 DRAIN connected to TAB G G DS S Top View Ordering Information: SUM70N03-09CP SUM70N03-09CP-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 70 40 Unit V 100 35 61b 93 A mJ W _C 3.75 -55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 71943 S-32523--Rev. D, 08-Dec-03 www.vishay.com PCB Mountc Symbol RthJA RthJC Limit 40 1.6 Unit _C/W 1 SUM70N03-09CP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 20 0.0115 100 0.0076 0.0095 0.015 0.014 S W 30 1.0 3.0 "100 1 250 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 15 V, VGS = 10 V, ID = 50 A 0.5 VGS = 0 V, VDS = 25 V, f = 1 MHz 2200 410 180 1.5 31 7.5 5.0 9 80 22 8 15 120 35 12 ns 2.1 45 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10 thru 6 V 5V 90 I D - Drain Current (A) I D - Drain Current (A) 90 120 Transfer Characteristics 60 4V 60 TC = 125_C 30 25_C 0 -55_C 3 4 5 6 30 3V 0 0 2 4 6 2V 8 10 0 1 2 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71943 S-32523--Rev. D, 08-Dec-03 2 SUM70N03-09CP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 100 0.05 On-Resistance vs. Drain Current g fs - Transconductance (S) TC = -55_C 25_C 125_C 60 r DS(on)- On-Resistance ( W ) 80 0.04 0.03 40 0.02 VGS = 4.5 V VGS = 10 V 20 0.01 0 0 10 20 30 40 50 0.00 0 20 40 60 80 100 ID - Drain Current (A) 3000 2500 C - Capacitance (pF) 2000 1500 1000 Coss 500 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss ID - Drain Current (A) 10 VDS = 15 V ID = 30 A Capacitance Ciss V GS - Gate-to-Source Voltage (V) Gate Charge 8 6 4 2 0 0 6 12 18 24 30 Qg - Total Gate Charge (nC) 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage r DS(on)- On-Resistance ( W ) (Normalized) 1.6 1.2 TJ = 150_C 10 TJ = 25_C 0.8 0.4 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 71943 S-32523--Rev. D, 08-Dec-03 www.vishay.com 3 SUM70N03-09CP Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 90 75 100 I D - Drain Current (A) 60 45 30 15 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) I D - Drain Current (A) 1000 Safe Operating Area Limited by rDS(on) 10, 100 ms 10 1 ms 10 ms 100 ms 1s 10 s TA = 25_C Single Pulse 100 s dc 1 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 71943 S-32523--Rev. D, 08-Dec-03 |
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