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| Preliminary SUF-2000 Product Description Sirenza Microdevices' SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0.88 x 0.86 mm2 die. It is well-suited for RF, LO, and IF driver applications. Gain & Return Loss vs. Frequency (GSG Probe Data) 20 18 16 14 G ain (dB) 12 10 8 6 4 2 0 0 4 8 12 16 20 Fre que ncy (Ghz) -30 IRL GAIN \ ORL -12 -18 -24 -6 Return Loss (dB) 0 0.2-10 GHz, Cascadable pHEMT MMIC Amplifier Product Features * * * * * * * * Broadband Performance High Gain = 12.0 dB @ 6 GHz P1dB = 16 dBm @ 6 GHz Low-noise, Efficient Gain Block 3.3V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Circuit Applications * * * * * Broadband Communications Test Instrumentation Military & Space LO and IF Mixer Applications High IP3 RF Driver Applications Frequency Min. Typ. Max. Symbol Parameters Units Gp Small Signal Power Gain dB P1dB Output Power at 1dB Compression dBm OIP3 Output Third Order Intercept Point dBm NF Noise Figure dB IRL Input Return Loss dB ORL Output Return Loss dB Isol VD ID G/T Rth, j-l Reverse Isolation dB Test Conditions: Test Conditions: Device Operating Voltage V Device Operating Current mA Device Gain Temperature Coefficient dB/C Thermal Resistance (junction-to-backside) mA Typ. C/W V =5V I = 80 S D VS = 3.3V, ID = 71mA OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm TL = 25C ZS = ZL = 50 Ohms Measured with Bias Tees ZS = ZL = 50 Ohms. GSG Probe Data With Bias Tees -18.0 -17.0 -16.0 3.3 71 -0.01 256 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm 2 GHz 6 GHz 10 GHz 2 GHz 6 GHz 10 GHz 2 GHz 6 GHz 10 GHz 2 GHz 6 GHz 10 GHz 2 GHz 6 GHz 10 GHz 2 GHz 6 GHz 10 GHz 2 GHz 6 GHz 10 GHz 12.0 11.5 11.0 16.0 16.0 15.5 33.0 30.0 27.0 3.6 3.6 4.6 -16.0 -24.0 -22.0 -10.0 -11.0 -15.0 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105416 Rev A Preliminary SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) S21 vs. Frequency 14 12 10 P1dB vs. Frequency 20 19 18 17 16 dBm 15 14 13 12 11 10 25C 0C 85C 8 dB 6 4 2 0 0 4 8 12 16 20 Fre que ncy (GHz) 0C 25C 85C 0 2 4 6 8 10 12 14 16 18 Fre que ncy (GHz) S11 vs. Frequency 0 -5 -10 dB -15 -20 -25 -30 0 4 8 12 16 20 Fre que ncy (GHz) 0C 25C 85C S22 vs. Frequency 0 -5 -10 dB -15 -20 -25 -30 0 4 8 12 16 20 Fre que ncy (GHz) 0C 25C 85C OIP3 vs . Fre que ncy 40 38 36 34 32 dBm 30 28 26 24 22 20 0 2 4 6 8 10 12 14 16 18 Fre que ncy (GHz) 1 0 0 2 4 dB 7 Noise Figure vs. Frequency 25C 0C 85C 6 5 4 3 2 25C -20C 85C 6 8 10 12 14 16 18 Fre que ncy (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105416 Rev A Preliminary SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) Freq (GHz) 0.2 0.5 0.85 2 4 6 10 16 Test Conditions: Test Conditions: VD (V) 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 Current (mA) 71 71 71 71 71 71 71 71 Gain (dB) 12.5 12.5 12.5 12.0 12.0 11.5 11.0 8.0 P1dB (dBm) OIP3 (dBm) S11 (dB) -14.0 -14.0 -15.0 -16.0 -18.0 -24.0 -22.0 -16.0 S22 (dB) -10.0 -10.0 -10.0 -10.0 -10.5 -11.0 -15.0 -17.0 NF (dB) 16.5 16.0 16.5 16.0 15.5 13.0 31.0 33.0 32.0 30.0 27.0 25.0 3.7 3.6 3.8 3.6 4.6 5.4 GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Absolute Limit 80mA 3.6V 10dBm Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp. 288mW 150C -40 to +85C -65 to 150C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=Backside of die IDVD < (TJ - TL) / RTH, j-l Current Variation vs. Temperature Current vs. Voltage 85 80 75 mA 70 65 60 55 3.1 3.15 3.2 3.25 3.3 VD 3.35 3.4 3.45 3.5 0C 25C 85C ELECTROSTATIC SENSITIVE DEVICE Appropriate precautions in handling, packaging and testing devices must be observed. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-105416 Rev A Preliminary SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier Pad Description 1 2 Pad # Function Description 1 2 Die Bottom This pad is DC coupled and matched to 50 Ohms. An external DC block is required. This pad is DC coupled and matched to 50 Ohms. RFOUT / Bias Bias is applied through this pad. RFIN GND Die bottom must be connected to RF/DC ground using silver-filled conductive epoxy. Notes: 1. All Dimensions in Inches [Millimeters]. 2. No connection required for unlabeled bond pads. 3. Die Thickness is 0.004 (0.100). 4. Typical bond pad is 0.004 (0.100) square. 5. Backside metalization: Gold. 6. Backside is Ground. 7. Bond pad metalization: Gold. Device Assembly +3.3V Interconnect Wire or Ribbon Bypass Cap(s) Choke 50 Line DC Block 50 Line DC Block 3-5 mil gap 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-105416 Rev A |
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