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| (R) STTH60L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF (typ) trr (max) FEATURES AND BENEFITS Up to 2 x 40 A 600 V 175C 1.0 V 65 ns A1 K A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses A1 K A2 TO-247 STTH60L06CW DESCRIPTION The STTH60L06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Table 2: Order Codes Part Number STTH60L06CW Marking STTH60L06CW Table 3: Absolute Ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) RMS forward voltage Average forward current = 0.5 Tc = 125C Per diode Tc = 110C Per device Tc = 100C Per diode Tc = 80C Per device tp = 10ms sinusoidal Value 600 60 30 60 40 80 210 -65 to + 175 175 Unit V A A IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature A C C September 2004 REV. 1 1/6 STTH60L06C Table 4: Thermal Resistance Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value (max). 1.05 0.68 0.3 C/W Unit C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * VF ** Parameter Test conditions VR = VRRM 80 IF = 30A 1.0 IF =60A 1.24 Tj = 150C Forward voltage drop Tj = 25C Tj = 150C Tj = 25C Tj = 150C Pulse test: ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.95 x IF(AV) + 0.010 I F (RMS) * tp = 5 ms, < 2% Min. Typ Max. 25 800 1.55 1.25 1.78 1.55 Unit A Reverse leakage current Tj = 25C V 2 Table 6: Dynamic Characteristics (per diode) Symbol trr IRM tfr VFP Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25C Test conditions IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = 50 A/s VR =30V Tj = 125C IF = 30A VR = 400V dIF/dt = 100 A/s Tj = 25C Tj = 25C IF = 30A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 30A dIF/dt = 100 A/s VFR = 1.1 x VFmax 2.5 65 11.5 Min. Typ Max. Unit 65 90 16 500 A ns V ns 2/6 STTH60L06C Figure 1: Conduction losses versus average forward current (per diode) P(W) 80 70 100 Figure 2: Forward voltage drop versus forward current (per diode) IFM(A) = 0.1 = 0.05 = 0.2 = 0.5 90 80 70 Tj=150C (maximum values) 60 50 40 30 20 10 =1 60 50 40 Tj=150C (typical values) Tj=25C (maximum values) T 30 20 IF(AV)(A) 0 0 10 20 30 =tp/T 40 tp 50 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VFM(V) 1.6 1.8 2.0 2.2 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) 45 40 35 IF=IF(AV) VR=400V Tj=125C IF=2 x IF(AV) 30 25 IF=0.5 x IF(AV) 0.5 20 0.4 0.3 15 T 0.2 Single pulse 10 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T tp 1.E+00 5 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) trr(ns) 800 700 600 500 400 300 200 100 IF=2 x IF(AV) VR=400V Tj=125C Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) Qrr(nC) 3500 VR=400V Tj=125C 3000 2500 2000 IF=IF(AV) IF=0.5 x IF(AV) IF=2 x IF(AV) IF=IF(AV) 1500 1000 500 IF=0.5 x IF(AV) dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 0 0 100 dIF/dt(A/s) 200 300 400 500 3/6 STTH60L06C Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) S factor 1.6 1.4 1.2 1.0 1.0 0.8 0.8 0.6 0.4 0.2 0.6 0.4 0.2 QRR IF=IF(AV) VR=400V Reference: Tj=125C IF< 2 x IF(AV) VR=400V Tj=125C Figure 8: Relative variations of dynamic parameters versus junction temperature 1.4 S factor 1.2 trr IRM dIF/dt(A/s) 0.0 0 50 100 150 200 250 300 350 400 450 500 Tj(C) 0.0 25 50 75 100 125 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) VFP(V) 10 9 8 7 6 IF=IF(AV) Tj=125C Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) tfr(ns) 450 400 350 300 250 IF=IF(AV) VFR=1.1 x VF max. Tj=125C 5 200 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500 150 100 dIF/dt(A/s) 50 0 0 100 dIF/dt(A/s) 200 300 400 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25C 100 VR(V) 10 1 10 100 1000 4/6 STTH60L06C Figure 12: TO-247 Package Mechanical Data REF. V V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5 5 V2 60 60 Dia. 3.55 3.65 0.139 0.143 Table 7: Ordering Information Ordering type STTH60L06CW Marking STTH60L06CW Package TO-247 Weight 4.46 g Base qty 50 Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N. Table 8: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue 5/6 STTH60L06C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
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