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P-CHANNEL 20V - 0.090 - 4A SO-8 2.7V-DRIVE STripFETTM II POWER MOSFET
TYPE STS4PF20V
s s s
STS4PF20V
VDSS 20 V
RDS(on) < 0.11 ( @ 4.5 V ) < 0.135 ( @ 2.7 V )
ID 4A
s
TYPICAL RDS(on) = 0.090 @ 4.5 V TYPICAL RDS(on) = 0.100 @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(*) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Value 20 20 12 4 2.5 16 2.5 Unit V V V A A A W
(*) Pulse width limited by safe operating area. June 2002
.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
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THERMAL DATA
Rthj-amb Tj Tstg
(*)Thermal
Resistance Junction-ambient Maximum Operating Junction Temperature storage temperature
[
Max
50 150 -55 to 150
C/W C C
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t
10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 12V Min. 20 1 10 100 Typ. Max. Unit V A A nA
IGSS
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 4.5 V VGS = 2.7 V ID = 250 A ID = 2 A ID = 2 A Min. 0.6 0.090 0.100 0.110 0.135 Typ. Max. Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=15V ID=2 A Min. Typ. 7.5 500 140 30 Max. Unit S pF pF pF
VDS = 15V, f = 1 MHz, VGS = 0
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*)
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 2 A VDD = 10 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) VDD= 10V ID= 4A VGS=4.5V (see test circuit, Figure 2) Min. Typ. 38 39 6.2 1 1.4 Max. Unit ns ns nC nC nC
SWITCHING OFF(*)
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 2 A VDD = 10 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 1) ID = 4 A Vclamp = 16 V RG = 4.7, VGS = 4.5 V (Inductive Load, Figure 3) Min. Typ. 54 12 46 11 15 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE(*)
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A VGS = 0 20 13 1.3 Test Conditions Min. Typ. Max. 4 16 1.2 Unit A A V ns nC A
di/dt = 100A/s ISD = 4 A VDD = 15 V Tj = 150C (Inductive Load, Figure 3)
(*)Pulse width [ 300 s, duty cycle 1.5 %. (*)Pulse width limited by TJMAX
Safe Operating Area
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
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Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
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SO-8 MECHANICAL DATA
DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
0016023
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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