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| STS3C3F30L N-CHANNEL 30V - 0.050 - 3.5A SO-8 P-CHANNEL 30V - 0.140 - 3A SO-8 STripFETTM II POWER MOSFET TYPE STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) s s s VDSS 30 V 30 V RDS(on) < 65 m < 165 m ID 3.5 A 3A s TYPICAL RDS(on) (N-Channel) = 50 m TYPICAL RDS(on) (P-Channel) = 140 m STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Single Operating Drain Current (continuos) at TC = 100C Single Operating Drain Current (pulsed) Total Dissipation at TC = 25C Dual Operating Total Dissipation at TC = 25C Single Operating Storage Temperature Max. Operating Junction Temperature 3.5 2.2 14 1.6 2 -60 to 150 150 N-CHANNEL 30 30 16 2.7 1.7 11 P-CHANNEL Unit V V V A A A W W C C (*) Pulse width limited by safe operating area. February 2002 . Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/10 STS3C3F30L THERMAL DATA Rthj-amb(1) Tl Thermal Resistance Junction-ambient Single Operation Dual Operating Maximum Lead Temperature For Soldering Purpose 62.5 78 300 C/W C/W C (1) when mounted on 0.5 in2 pad of 2 oz. copper ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 16 V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 10 V VGS = 4.5 V VGS = 4.5 V ID = 250 A ID = 1.75 A ID = 1.5 A ID = 1.75 A ID = 1.5 A n-ch p-ch n-ch p-ch n-ch p-ch Min. 1 1 50 140 60 160 65 165 90 200 Typ. Max. Unit V V m m m m DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V VDS = 15 V ID= 1.75 A ID= 1.5 A n-ch p-ch n-ch p-ch VDS = 25V, f = 1 MHz, VGS = 0 n-ch p-ch n-ch p-ch Min. Typ. 5.5 4 320 420 90 95 40 30 Max. Unit S S pF pF pF pF pF pF 2/10 STS3C3F30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Test Conditions N-CHANNEL ID = 1.75 A VDD = 15 V RG = 4.7 VGS = 4.5 V P-CHANNEL VDD = 15 V ID = 1.5 A RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) N-CHANNEL VDD=24V ID=3.5A VGS=4.5V n-ch p-ch n-ch p-ch Min. Typ. 27 14.5 40 37 Max. Unit ns ns ns ns Rise Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge n-ch p-ch 8.5 4.8 2 1.7 4 2 12 7 nC nC nC nC nC nC n-ch P-CHANNEL VDD = 24V ID = 3A VGS = 4.5V p-ch n-ch (see test circuit, Figure 2) p-ch SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Test Conditions N-CHANNEL ID = 1.75 A VDD = 15 V RG = 4.7 VGS = 4.5 V P-CHANNEL VDD = 15 V ID = 1.5 A RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) Test Conditions n-ch p-ch n-ch p-ch ISD = 3.5 A ISD = 3 A VGS = 0 VGS = 0 n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch 28 35 18 25 1.3 1.5 n-ch p-ch n-ch p-ch Min. Typ. 30 90 20 23 Max. Unit ns ns ns ns Fall Time SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD() Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Min. Typ. Max. 3.5 3 14 12 1.2 1.2 Unit A A A A V V ns ns nC nC A A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current N-CHANNEL ISD = 3.5 A di/dt = 100A/s Tj =150 oC VDD = 15 V P-CHANNEL di/dt = 100A/s ISD = 3 A Tj =150 oC VDD = 15 V (see test circuit, Figure 3) () Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*) Pulse width limited by safe operating area. 3/10 STS3C3F30L Safe Operating Area n-ch Thermal Impedance n-ch Output Characteristics n-ch Transfer Characteristics n-ch Transconductance n-ch Static Drain-source On Resistance n-ch 4/10 STS3C3F30L Gate Charge vs Gate-source Voltage n-ch Capacitance Variations n-ch Normalized Gate Threshold Voltage vs Temperature n-ch Normalized on Resistance vs Temperature n-ch Source-drain Diode Forward Characteristics n-ch 5/10 STS3C3F30L Safe Operating Area p-ch Thermal Impedance p-ch Output Characteristics p-ch Transfer Characteristics p-ch Transconductance p-ch Static Drain-source On Resistance p-ch 6/10 STS3C3F30L Gate Charge vs Gate-source Voltage p-ch Capacitance Variations p-ch Normalized Gate Threshold Voltage vs Temperature p-ch Normalized on Resistance vs Temperature p-ch Source-drain Diode Forward Characteristics p-ch 7/10 STS3C3F30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 8/10 STS3C3F30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 9/10 STS3C3F30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10 |
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