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Bulletin I25190 rev. D 04/00 ST700C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK) 910A Typical Applications DC motor control Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz VDRM/VRRM tq TJ typical case style TO-200AC (B-PUK) Units A C A C A A KA2s KA2s V s C ST700C..L 910 55 1857 25 15700 16400 1232 1125 1200 to 2000 150 - 40 to 125 www.irf.com 1 ST700C..L Series Bulletin I25190 rev. D 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 12 16 ST700C..L 18 20 VDRM /VRRM , max. repetitive peak and off-state voltage V 1200 1600 1800 2000 VRSM , maximum nonrepetitive peak voltage V 1300 1700 1900 2100 IDRM/I RRM max. @ TJ = T J max mA 80 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST700C..L 910 (355) 55 (85) 1857 15700 16400 13200 13800 Units Conditions A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. It 2 Maximum I t for fusing 2 1232 1125 871 795 I 2 t Maximum I2 t for fusing 12321 1.00 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV) ), TJ = TJ max. V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state V 1.13 (I > x IT(AV) ),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.35 1.80 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. I = 2000A, TJ = TJ max, t = 10ms sine pulse pk p 0.40 slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current 2 www.irf.com ST700C..L Series Bulletin I25190 rev. D 04/00 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td t Typical delay time Typical turn-off time ST700C..L 1000 1.0 Units Conditions A/s Gate drive 20V, 20, tr 1s TJ = T J max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s s Vd = 0.67% VDRM, TJ = 25C ITM = 750A, TJ = T J max, di/dt = 60A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s p q 150 Blocking Parameter dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST700C..L 500 80 Units Conditions V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM IGM Maximum peak gate power ST700C..L 10.0 2.0 3.0 20 Units Conditions TJ = TJ max, t 5ms W A p PG(AV) Maximum average gate power Max. peak positive gate current TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms p +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.1 V 5.0 MAX. 200 3.0 10 0.25 mA V V mA TJ = TJ max, t 5ms p TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max www.irf.com 3 ST700C..L Series Bulletin I25190 rev. D 04/00 Thermal and Mechanical Specification Parameter TJ T stg ST700C..L -40 to 125 -40 to 150 0.073 0.031 0.011 0.006 14700 (1500) Units C Conditions Max. operating temperature range Max. storage temperature range RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10% DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled K/W N (Kg) g wt Approximate weight Case style 255 TO - 200AC (B-PUK) See Outline Table RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Conduction angle Single Side Double Side 180 120 90 60 30 0.009 0.011 0.014 0.020 0.036 0.009 0.011 0.014 0.020 0.036 Rectangular conduction Units Single Side Double Side 0.006 0.011 0.015 0.021 0.036 0.006 0.011 0.015 0.021 0.036 K/W TJ = TJ max. Conditions Ordering Information Table Device Code ST 1 70 2 0 3 C 4 20 5 L 6 1 7 8 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) L = Puk Case TO-200AC (B-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection) 4 www.irf.com ST700C..L Series Bulletin I25190 rev. D 04/00 Outline Table 0.7 (0.03) MIN. 2 7 (1 . 06 ) M AX . 34 (1.34) DIA. MAX. TWO PLACES PIN RECEPTACLE AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20 5 58 .5 (2.3 ) D I A. M AX . 4.7 (0.18) Case Style TO-200AC (B-PUK) 36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) M a xim u m A llo w a b le He a t sin k T e m p e ra t u re (C ) M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (C ) 13 0 12 0 11 0 10 0 90 S T 7 0 0 C ..L Se rie s (S in gle S id e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K/ W 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 20 0 3 0 ST 7 0 0 C ..L S e r ie s (S in g le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K/ W C on duc tio n Pe rio d C o nd uctio n A ng le 80 70 60 50 40 0 10 0 200 300 40 0 500 60 0 70 0 A v e r a g e O n -st a t e C u rre n t (A ) Fig. 1 - Current Ratings Characteristics 30 60 90 1 20 180 60 90 120 60 0 180 800 DC 1 00 0 4 00 A v e ra ge O n - sta t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST700C..L Series Bulletin I25190 rev. D 04/00 M axim um Allo w able Heatsin k Tem perature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 400 600 800 1000 1200 Average O n-sta te Current (A) Fig. 3 - Current Ratings Characteristics C o nduc tio n A ng le M a xim u m A llo w a b le H e a tsin k T e m p e r a tu re ( C ) ST700C..L Series (Double Side Cooled ) R thJ- hs (DC) = 0.031 K/W 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 400 30 60 ST 7 0 0 C ..L Se rie s (D o ub le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 3 1 K / W C o ndu ctio n Pe rio d 90 120 18 0 DC 8 00 1 2 00 1 60 0 2 00 0 A v e r a g e O n -st a te C urre n t (A ) Fig. 4 - Current Ratings Characteristics 30 60 90 120 180 Maxim um Average On-state Power Loss (W ) Maxim um Average On -state Pow er Loss (W ) 2800 2400 2000 1600 1200 800 400 0 0 200 400 600 800 1000 1200 Average On -state Curren t (A) Fig. 5- On-state Power Loss Characteristics C o ndu ct io n A ng le 3500 3000 2500 2000 1500 C o nd uc tio n Pe rio d 180 120 90 60 30 RMS L im it DC 180 120 90 60 30 RM S Lim it 1000 500 0 0 400 800 1200 1600 2000 Avera ge On -state Curren t (A) Fig. 6- On-state Power Loss Characteristics ST700C..L Series T J = 125C ST700C..L Series T J = 125C P e a k H a lf S in e W a v e O n -st a te C u rre n t (A ) 1 30 0 0 1 20 0 0 1 10 0 0 1 00 0 0 9 00 0 8 00 0 7 00 0 6 00 0 1 A t A n y R a t e d Lo a d C o n d itio n A n d W it h R a t e d V RRM A p p lie d F o llo w in g Su rg e . In it ia l T = 1 2 5 C J @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s P e a k H a lf Sin e W a v e O n - sta t e C ur re n t (A ) 1 40 0 0 16000 15000 M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P ulse T ra in D u ra t io n . C o n t ro l O f C o n d u c t io n M a y N o t Be M a in ta in e d . 14000 In it ia l T J = 1 2 5 C N o V o lta g e Re a p p lie d 13000 Ra t e d V RRM R e a p p lie d 12000 11000 10000 9000 8000 7000 ST 7 0 0 C ..L Se rie s 0.1 P u lse T ra in D u ra tio n (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled S T 7 0 0 C ..L S e rie s 10 100 6000 0.01 1 N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N ) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 www.irf.com ST700C..L Series Bulletin I25190 rev. D 04/00 1 0 0 00 In st an t an e o u s O n -st a te C u rre n t ( A ) TJ = 2 5 C T J = 1 2 5 C 1 00 0 S T7 0 0 C ..L S e rie s 10 0 0 .5 1 1 .5 2 2 .5 3 3 .5 4 In sta n t a n e o u s O n - st a te V o lt a g e ( V ) Fig. 9 - On-state Voltage Drop Characteristics 0 .1 Tra n sie n t Th e rm al Im pe da n ce Z thJ-hs ( K/ W ) ST 7 0 0 C ..L Se rie s 0 .0 1 St e a d y St a t e V a lu e R thJ-hs = 0 .0 7 3 K / W ( Sin gle Sid e C o o le d ) R thJ-hs = 0 .0 3 1 K / W ( D o u ble Sid e C o o le d ) ( D C O p e rat io n ) 0 .0 0 1 0 .0 0 1 0. 01 0 .1 Sq u a re W a v e P ulse D ur at io n ( s) 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 In sta n t a n e o u s G at e V o lta g e ( V ) R e c t a n g ula r g a t e p ulse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra t e d d i/ d t : 1 0 V , 1 0 o h m s 10 tr< = 1 s (b ) Tj=-40 C (1) (2) (3) (4) (a ) PGM PGM PGM PG M = = = = 10W , 20W , 40W , 60W , tp tp tp tp = = = = 4m s 2m s 1m s 0 .6 6 m s Tj=2 5 C Tj=125 C 1 VG D IG D 0. 1 0 .0 0 1 0 .0 1 (1) (2) (3) (4) D e v ic e : ST 7 0 0 C ..L S e rie s 0 .1 1 Fre q u e n c y L im ite d b y P G ( A V ) 10 1 00 In sta n t a n e o u s G a te C u rre n t ( A ) Fig. 11 - Gate Characteristics www.irf.com 7 |
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