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N Channel Enchancement Mode MOSFET 60V/60A DESCRIPTION
ST6006S / ST6006
The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safetv margin against unexpected voltage transients.
PIN CONFIGURATION
TO-220-3L ST6006 TO-263-2L ST6006S
APPLICATIONS Power Supplies Converters Power Motor controls Bridge Circuit
FEATURE 20V/2.8A, RDS(ON) = 85m-ohm @VGS = 4.5V 20V/2.4A, RDS(ON) = 115m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 60V/60A ORDERING INFORMATION Part Number ST6006T220TG ST6006T220RG Package TO-220-3L TO-263-2L
ST6006S / ST6006
Part Marking ST6006D ST6006
ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc
JA
Typical 60 +/-20 60 39 120 60 120 3.7 150 -55/150 40 62.5
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 60V/60A
ST6006S / ST6006
ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS Symbol V(BR)DSS VGS(th) IGSS Condition VGS=0V,ID=10uA VDS=VGS,ID=50uA VDS=0V,VGS=20V VDS=60V,VGS=0V VDS=20V,VGS=0V TJ=125J VDS=60V,VGS=0V TJ=175J VDS=5V,VGS=10V VGS=10V,ID=30A VGS=10V,ID=30A TJ=125J VGS=10V,ID=30A TJ=175J VGS=5V,ID=30A VDS=15V,ID=30A IF=60A,VGS=0V VDS=30V,VGS=10V IDY 60A VDS=25V,VGS=0V F=1MHz 39 12 10 2000 400 115 12 36 34 10 Min Typ Max Unit 60 1.0 3.0 V V
100 nA 1 uA 50
On-State Drain Current Drain-source On-Resistance
ID(on)
60 12 24 31 14 49 16 30
A
RDS(on)
m[ 37 19 S 1.6 60 nC V
Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
gfs
VSD Qg Qgs Qgd Ciss Coss Crss
pF 25 60 nS 60 25
td(on) tr td(off) tf
VDD=10V,RL=5.5[ ID=3.6A,VGEN=4.5V RG=6[
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N Channel Enchancement Mode MOSFET 60V/60A TO-220-3L PACKAGE OUTLINE ST6006
ST6006S / ST6006
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 60V/60 TO-263-2L PACKAGE OUTLINE ST6006S
ST6006S / ST6006
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 60V60A TYPICAL CHARACTERISTICS
ST6006S / ST6006
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N Channel Enchancement Mode MOSFET 60V60A TYPICAL CHARACTERISTICS
ST6006S / ST6006
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N Channel Enchancement Mode MOSFET 60V60A TYPICAL CHARACTERISTICS
ST6006S / ST6006
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