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| P Channel Enchancement Mode MOSFET -1.7A DESCRIPTION ST2303 The ST2303 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE -30V/-2.6A, RDS(ON) = 130m-ohm D G 1 1.Gate 2.Source S 2 3.Drain @VGS = -10V -30V/-2.0A, RDS(ON) = 180m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 S03YA 1 S: Subcontractor 2 Y: Year Code W: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 P Channel Enchancement Mode MOSFET -1.7A ST2303 ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc JA Typical -30 +20 -2.6 -2.0 -10 -1.25 1.25 0.8 150 -55/150 100 Unit V V A A A W J J J /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page2 P Channel Enchancement Mode MOSFET -1.7A ST2303 ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss VDS=-15V,VGS=-10V IDY -1.7A VDS=-15V,VGS=0V F=1MHz 5.8 0.8 1.5 226 87 19 9 9 18 6 10 nC Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) Condition VGS=0V,ID=-10uA Min Typ Max Unit -30 -3.0 V V VDS=VGS,ID=-250uA -1.0 VDS=0V,VGS=+20V VDS=-30V,VGS=0V VDS=-30V,VGS=0V TJ=55J VDSO -5V,VGS=-10V VGS=-10V,ID=-2.6A VGS=-4.5V,ID=-2.0A VDS=-10V,ID=-1.7V IS=-1.25A,VGS=0V +100 nA -1 -10 -6 uA A 0.095 0.130 [ 0.125 0.180 2.4 S -0.8 -1.2 V gfs VSD PF 20 20 nS 35 20 td(on) tr td(off) tf VDD=-15V,RL=15[ ID=-1.0A,VGEN=-10V RG=6[ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page3 P Channel Enchancement Mode MOSFET -1.7A SOT-23-3L PACKAGE OUTLINE ST2303 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page4 P Channel Enchancement Mode MOSFET -1.7A ST2303 TYPICAL CHARACTERICTICS (25J Unless noted) Page 5 P Channel Enchancement Mode MOSFET -1.7A ST2303 TYPICAL CHARACTERICTICS (25J Unless noted) Page 6 |
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