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SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm * * Small package Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse (Q1, Q2 Common) Symbol VDS VGSS ID IDP PD (Note) Tch Tstg Rating 60 20 200 800 300 150 -55~150 Unit V V mA mW C C Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range 1.SOURCE1 4.SOURCE2 2.GATE1 5.GATE2 3.DRAIN2 6.DRAIN1 JEDEC JEITA TOSHIBA 2-2J1C Note: Total rating, mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.32mm x 6) 0.4 mm 0.8 mm Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NC 1 2 3 1 Q1 Q2 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2004-05-07 SSM6N7002FU Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs (Q1, Q2 Common) Test Condition VGS = 20 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 0.25 mA VDS = 10 V, ID = 200 mA ID = 500 mA, VGS = 10 V Min 60 1.0 170 VDS = 25 V, VGS = 0, f = 1 MHz Typ 2.0 2.1 2.2 17 1.4 5.8 2.4 26 Max 10 1 2.5 3.0 3.2 3.3 pF pF pF ns Unit A V A V mS Drain-Source ON resistance RDS (ON) ID = 100 mA, VGS = 5 V ID = 100 mA, VGS = 4.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on delay time Turn-off delay time Ciss Crss Coss td(on) td(off) VDD = 30V, ID = 200 mA, VGS = 0 ~ 10V 4.0 40 Switching Time Test Circuit (a) Test circuit 10V 0 IN 50 0V RL VDD OUT (b) VIN 10 V 90% 10% 10 s VDD = 30 V Duty < 1% = VIN: tr, tf < 2 ns (Zout = 50 ) Common Source Ta = 25C (c) VOUT VDD 10% 90% tr td(on) td(off) tf VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID =250 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 4.5 V or higher to turn on this product. 2 2004-05-07 SSM6N7002FU ID - VDS 1000 900 800 Common Source Ta=25C 7 10 3.3 3.0 2.7 2.5 VGS=2.3V 5 4.5 4.0 ID - VGS 1000 100 Drain current ID (mA) Common Source VDS=10V Drain current ID (mA) 700 600 500 400 300 200 100 0 0 0.5 1 10 1 0.1 0.01 Ta=100C 25C -25C 1.5 2 0 1 2 3 4 5 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS(ON) - ID RDS(ON) - VGS Drain-Source on resistance RDS(ON) () 4 Common Source Ta=25C Drain-Source on resistance RDS(ON) () 5 5 Common Source ID=100mA Ta=100C 3 25C 4 3 VGS=4.5V 2 5.0V 2 10V 1 1 -25C 0 10 100 Drain current ID (mA) 1000 0 0 2 4 6 8 Gate-Source voltage VGS (V) 10 RDS(ON) - Ta 5 2 Common Source 4 VGS=4.5V,ID=100mA 3 10V,500mA 5.0V,100mA 1.8 Vth - Ta Common Source ID=0.25mA VDS=10V Drain-Source on resistance RDS(ON) () Gate threshold voltage Vth(V) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2 1 0 -25 0 25 50 75 100 125 Ambient temperature Ta (C) 150 0 -25 0 25 50 75 100 125 Ambient temperature Ta (C) 150 3 2004-05-07 SSM6N7002FU |Yfs| - ID 1000 1000 900 800 700 600 500 400 300 200 100 0 10 100 Drain current ID (mA) 1000 0 S G IDR - VDS Common Source VGS=0V Ta=25C D Drain reverse current IDR (mA) Forward transfer admittance |Yfs| (mS) IDR 100 Common source VDS=10V Ta=25C 10 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Drain-Source voltage VDS (V) C - VDS 100 Common Source VGS=0V f=1MHz Ta=25C 10000 t - ID Common Source VDD=30V VGS=0~10V Ta=25C 10 Coss Ciss Switching time t (ns) Capacitance C (pF) 1000 tf 100 td(off) 10 td(on) 1 Crss 1 0.1 1 10 Drain-Source voltage VDS (V) 100 tr 1 10 100 Drain current ID (mA) 1000 PD* - Ta 400 Drain power dissipation PD* (mW) 350 300 250 200 150 100 50 0 0 20 mounted on FR4 board 25.4mmx25.4mmx1.6t Cu Pad0.32mm2x6 * :Total rating 40 60 80 100 120 140 160 Ambient temperature Ta (C) 4 2004-05-07 SSM6N7002FU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-05-07 |
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