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| Semiconductor SDB310WM Schottky Barrier Diode Features * Low power rectified * Silicon epitaxial type * High reliability Ordering Information Type No. SDB310WM Marking DB3 Package Code SOT-23 Outline Dimensions unit : mm 2.40.1 1.300.1 1 1.90 Typ. 3 2 0.4 Typ. 2.90.1 3 0.45~0.60 0.2 Min. 1 2 1.12 Max. 0~0.1 KSD-2027-001 0.124 PIN Connections 1. Anode 2. Cathode 3. Cathode, Anode 0.38 -0.03 +0.05 1 SDB310WM Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature Ta=25C Symbol VR IFRM IF IFSM PD Tj Tstg * Ratings 30 0.5 0.2 2 150 150 -55 ~ 150 Unit V A A A mW C C * : = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit ratingx1.5 Electrical Characteristics Characteristic Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time Ta=25C Symbol VF(1) VF(2) IR CT trr IF=10mA IF=30mA VR=30V Test Condition Min. Typ. Max. 0.4 0.5 1 10 5 Unit V V A pF ns VR=1V, f=1MHz IF= IR=10mA, IRR= 1mA, RL=100 KSD-2027-001 2 SDB310WM Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR Fig. 3 CT-VR KSD-2027-001 3 |
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