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| RFP10P15 Data Sheet October 1999 File Number 1595.2 -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9404. Features * -10A, -150V * rDS(ON) = 0.500 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFP10P15 PACKAGE TO-220AB BRAND RFP10P15 Symbol D NOTE: When ordering, include the entire part number. G S Packaging TO-220AB DRAIN (TAB) SOURCE DRAIN GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP10P15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP10P15 -150 -150 10 30 20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20K (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS CONDITIONS ID = 250A, VGS = 0 VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC MIN -150 -2 VGS = 0V, VDS = -25V f = 1MHz (Figure 9) RFM10P12, RFM10P15 RFP10P12, RFP10P15 TYP 24 74 138 61 MAX -4 1 25 100 -5.0 0.500 50 150 225 100 1700 600 350 1.25 1.67 UNITS V V A A nA V ns ns ns ns pF pF pF oC/W oC/W Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0 ID = 10A, VGS = -10V ID = 10A, VGS = -10V, (Figures 6, 7) ID 10A, VDS = -75V, RG = 50 RL = 7.5, VGS = -10V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulsed: Pulse Duration = 300s Max, Duty Cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = -10A ISD = -10A, dlSD/dt = 100A/s MIN TYP 210 MAX 1.4 UNITS V ns 2 RFP10P15 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 -12 -11 -10 ID, DRAIN CURRENT (A) -9 -8 -7 -6 -5 -4 -3 -2 -1 0 25 50 75 100 125 150 RFP10P12, RFP10P15 RFM10P12, RFM10P15 0.8 0.6 0.4 0.2 0 0 50 100 150 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) ID MAX CONTINUOUS 10 DC TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) 32 28 24 PULSE DURATION = 80s TC = 25oC VGS = -10V VGS = -20V 20 16 12 8 4 0 VGS = -5V VGS = -8V VGS = -7V VGS = -6V 1 RFM10P12, RFP10P12 RFM10P15, RFP10P15 0.1 -1 -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) -1000 0 -1 -3 -5 -7 -6 -8 -2 -4 VDS, DRAIN TO SOURCE VOLTAGE (V) -9 -10 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS 14 ID(ON), ON STATE DRAIN CURRENT (A) 12 VDS = -10V PULSE DURATION = 80s 0.8 25oC -40oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 8 12 6 10 14 ID, DRAIN CURRENT (A) 16 18 20 25oC -40oC 125oC VGS = -10V PULSE DURATION = 80s 10 8 125oC 6 4 125oC 2 0 -40oC 0 -1 -3 -5 -4 -6 VGS, GATE TO SOURCE VOLTAGE (V) -2 -7 -8 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 3 RFP10P15 Typical Performance Curves 2.0 ID = -10A NORMALIZED DRAIN TO SOURCE ON RESISTANCE (m) VGS = 10V THRESHOLD VOLTAGE 1.5 NORMALIZED GATE 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 -50 50 100 0 TJ, JUNCTION TEMPERATURE (oC) 150 0.6 -50 (Continued) 1.4 ID = 250A VDS = VGS 1.0 0.5 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 0 CRSS COSS CISS DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 150 VDD = BVDSS GATE SOURCE VOLTAGE RL = 15 IG(REF) = 0.84mA VGS = -10V 0.75BVDSS 0.50BVDSS 0.25BVDSS VDD = BVDSS 8 GATE TO SOURCE VOLTAGE (V) 10 112.5 6 75 4 37.5 2 DRAIN SOURCE VOLTAGE 0 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr 0 RL 10% tOFF td(OFF) tf 10% DUT VGS RG VDD + VDS VGS 0 90% 90% 10% 50% PULSE WIDTH 90% 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4 RFP10P15 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 5 |
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