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| RF2304 0 Typical Applications * Receive or Transmit Low-Noise Amplifiers * FDD and TDD Communication Systems * Commercial and Consumer Systems Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power, it may also be used as a driver in transmitter applications, or in highly linear receivers. The device is packaged in an 8-lead plastic package and is self-contained, requiring just an inductor and blocking capacitors to operate. The +6dBm output power, combined with the 1.8dB noise figure at 900MHz allows excellent dynamic range for a variety of receive and transmit applications. -A0.008 0.004 0.018 0.014 GENERAL PURPOSE LOW-NOISE AMPLIFIER RoHS Compliant & Pb-Free Product * Portable Battery Powered Equipment * Wireless LAN * ISM Band Applications 0.196 0.189 0.050 0.157 0.150 0.244 0.229 0.068 0.053 8 MAX 0 MIN 0.034 0.016 0.009 0.007 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity 0.005 with respect to datum "A". Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOIC-8 Features * Single 2.7V to 6.0V Supply * 6dBm Output Power * 8dB Small Signal Gain at 900MHz * 1.8dB Noise Figure at 900MHz * Low DC Current Consumption of 5mA * 300MHz to 2500MHz Operation GND 1 GND 2 RF IN 3 GND 4 8 NC 7 VDD 6 RF OUT 5 GND Ordering Information RF2304 General Purpose Low-Noise Amplifier RF2304PCBA-41X Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A7 060908 4-201 RF2304 Absolute Maximum Ratings Parameter Supply Voltage (VDD) DC Current Input RF Power Operating Ambient Temperature Storage Temperature Rating -0.5 to +6.5 40 +10 -40 to +85 -40 to +150 Unit VDC mA dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Operating Range Overall Frequency Range Supply Voltage Operating Current (ICC) Operating Ambient Temperature Specification Min. Typ. Max. 300 2.7 7 -40 8.4 11 2500 6.0 26 +85 Unit MHz V mA mA C dB dB dB dBm dBm dB dB dBm dBm dB dB dBm dBm dB dB dB dBm dBm dB dB dBm dBm dB dB dBm dBm Condition VCC =3V, Temp=27C VCC =5V, Temp=27C 3V Performance Gain Gain Noise Figure Input IP3 OP1dB Gain Noise Figure Input IP3 OP1dB Gain Noise Figure Input IP3 OP1dB 11.7 8.5 1.9 +6.9 +7.5 9.2 1.7 +8.6 +6.9 8.2 1.7 +10.5 +7.5 12.5 12 1.9 +8.4 +8.7 9.8 1.9 +10.0 +8 8 1.6 +8.0 +6 Freq=300MHz, VCC =3V, Temp=27C Freq=900MHz, VCC =3V, Temp=27C Freq=1950MHz, VCC =3V, Temp=27C Freq=2450MHz, VCC =3V, Temp=27C 5V Performance Gain Gain Noise Figure Input IP3 OP1dB Gain Noise Figure Input IP3 OP1dB Gain Noise Figure Input IP3 OP1dB 10 14 Freq=300MHz, VCC =5V, Temp=27C Freq=900MHz, VCC =5V, Temp=27C Freq=1950MHz, VCC =5V, Temp=27C 6 11 Freq=2450MHz, VCC =5V, Temp=27C 4-202 Rev A7 060908 RF2304 Pin 1 2 3 Function GND GND RF IN Description Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 1. DC coupled RF input. A broadband impedance match is produced by internal shunt resistive feedback. The DC level is approximately 200mV. If a DC path exists in the connected circuitry, an external DCblocking capacitor is required to properly maintain the DC operating point. Same as pin 1. Same as pin 1. RF output. A broadband impedance match is produced by internal shunt resistive feedback. The DC connection to the power supply is provided through an external chip inductor having greater than 150 reactance at the operating frequency. An external DC-blocking capacitor is required if the following circuitry is not DC-blocked. VDD RF OUT Interface Schematic 4 5 6 GND GND RF OUT RF IN 7 VDD2 8 NC Bias control connection. This pin is normally connected to the power supply, but can be used to switch the amplifier on and off by switching between power supply voltage and ground. This pin sinks approximately 600A when connected to VDD, and sources less than 10A when grounded. No connection. Application Schematic VDD 1 nF 1 2 100 pF RF IN 3 4 6 100 pF 5 8 7 L1 RF Choke Rev A7 060908 4-203 RF2304 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 2 NC 3 VCC GND C3 1 nF P1-1 1 C1 100 pF 2 3 4 8 7 6 5 C4 1 nF L1 82 nH C2 100 pF J1 RF IN 50 strip 50 strip J2 RF OUT 2304400B Evaluation Board Layout 1.43" x 1.43" 4-204 Rev A7 060908 RF2304 Typical Characteristics - f=900MHz 25 15 20 12 Gain 15 mA P1dB 9 dB, dBm 6 3 0 3 3.5 4 Vdd (V) 4.5 5 10 9 8 7 Noise Figure (dB) 6 5 4 3 2 1 0 0 500 1000 1500 Frequency (MHz) 2000 2500 3000 10 Idd 5 NF 0 Typical Characteristics - VDD =5.0V 20 18 16 14 12 Gain (dB) 10 8 6 4 2 0 Rev A7 060908 4-205 RF2304 S11 Vcc=3V S11VCC = 3V 1.0 S11 Vcc=5V S11 VCC = 5V 1.0 0.6 Swp Max 6GHz 0 2. 0.6 Swp Max 6GHz 2. 0 0.8 0.8 4 GHz 3. 0 3 GHz 10.0 300 MHz 1 GHz .4 -0 .4 -0 .0 -2 -0. 6 -0. 6 -0.8 -0.8 . -2 0 Swp Min 0.01GHz Swp Min 0.01GHz S22 Vcc=3V S22 VCC = 3V 1.0 0.6 0.6 S22 Vcc=5V S22 VCC = 5V Swp Max 6GHz 2. 0 1.0 -1.0 -1.0 Swp Max 6GHz 2. 0 3 .0 0.8 0.8 3 .0 4 GHz 10.0 10.0 1 GHz 1 GHz .4 -0 -0 .4 .0 -2 -0. -0. Swp Min 0.01GHz -0.8 -0.8 . -2 6 6 0 Swp Min 0.01GHz -1.0 S-Parameter Conditions: All plots are taken at ambient temperature=25C. NOTE: All S11 and S22 plots shown were taken from an RF2304 evaluation board with external input and output tuning components removed and the reference points at the RF IN and RF OUT pins. 4-206 -1.0 Rev A7 060908 -4. 0 -5.0 -3 .0 -4. 0 -5.0 -0.2 -0.2 -10.0 -10.0 100 MHz 100 MHz 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 0.2 4.0 5.0 4 GHz -4. 0 -5.0 -3 .0 0. 4 -4. 0 -5.0 -0.2 -0.2 100 MHz 1 GHz 4.0 5.0 -10.0 -10.0 2 GHz 2 GHz 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 0.2 4.0 5.0 0. 4 4 GHz 3 GHz -3 . -3 .0 0 0. 4 3. 0 4.0 5.0 10.0 0. 4 0.2 0.2 RF2304 Gain versus Temperature Frequency = 900 MHz 12.0 Vcc=3V 11.8 Vcc=5V 11.6 11.4 11.2 11.0 10.8 10.6 6.5 10.4 Vcc=5V 10.2 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 6.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Vcc=3V 8.0 8.5 9.0 IIP3 versus Temperature Frequency = 900 MHz IIP3 (dBm) Temperature (C) Gain (dB) 7.5 7.0 Temperature (C) OP1dB versus Temperature Frequency = 900 MHz 11.0 Vcc=3V 10.0 Vcc=5V 11.0 10.5 9.0 12.0 11.5 ICC versus Temperature Frequency = 900 MHz OP1dB (dBm) 10.0 8.0 ICC (mA) 9.5 9.0 7.0 8.5 8.0 6.0 7.5 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 7.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Vcc=3V Vcc=5V Temperature (C) Temperature (C) Gain versus Temperature Frequency = 1950 MHz 10.6 Vcc=3V 10.4 Vcc=5V 10.2 10.0 19.5 9.8 9.6 9.4 9.2 9.0 8.8 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 18.0 20.0 20.5 21.0 IIP3 versus Temperature Frequency = 1950 MHz IIP3 (dBm) Gain (dB) 19.0 18.5 Vcc=3V 17.5 Vcc=5V 17.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) Rev A7 060908 4-207 RF2304 OP1dB versus Temperature Frequency = 1950 MHz 11.0 Vcc=3V 11.5 10.0 Vcc=5V 11.0 9.0 12.0 ICC versus Temperature Frequency = 1950 MHz OP1dB (dBm) 10.5 ICC (mA) 8.0 10.0 9.5 7.0 9.0 6.0 8.5 Vcc=3V Vcc=5V 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 8.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) Gain versus Temperature Frequency = 2450 MHz 9.5 22.0 21.5 9.0 21.0 20.5 IIP3 versus Temperature Frequency = 2450 MHz IIP3 (dBm) Gain (dB) 8.5 20.0 19.5 19.0 18.5 8.0 7.5 Vcc=3V 18.0 Vcc=3V 17.5 Vcc=5V Vcc=5V 7.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 17.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) OP1dB versus Temperature Frequency = 2450 MHz 12.0 Vcc=3V 11.5 11.0 Vcc=5V 11.0 10.0 10.5 10.0 12.0 ICC versus Temperature Frequency = 2450 MHz OP1dB (dBm) ICC (mA) 9.0 9.5 9.0 8.5 8.0 8.0 7.0 6.0 7.5 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 7.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 Vcc=3V Vcc=5V 80.0 100.0 Temperature (C) Temperature (C) 4-208 Rev A7 060908 RF2304 S11 of Evaluation Board versus Frequency Temperature = +25C 3.0 2.0 1.8 2.5 1.6 1.4 2.0 S22 of Evaluation Board versus Frequency Temperature = +25C Output VSWR Vcc=3V Vcc=5V Input VSWR 1.2 1.0 0.8 0.6 0.4 1.5 1.0 0.5 Vcc=3.0V 0.2 0.0 Vcc=5.0V 0.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Frequency (MHz) -18.0 Reverse Isolation (S12) of Evaluation Board versus Frequency, Temperature = +25C -18.2 Reverse Isolation (dB) -18.4 Vcc=3.0V -18.6 Vcc=5.0V -18.8 -19.0 -19.2 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Rev A7 060908 4-209 RF2304 4-210 Rev A7 060908 |
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