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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
DRAWING
22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1
Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
7.2+/-0.5
OUTLINE
*High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz *High Efficiency: 55%typ.
2 3
R1.6
14.0+/-0.4
6.6+/-0.3
FEATURES
1
3.0+/-0.4
5.1+/-0.5
For output stage of high power amplifiers in UHF band mobile radio sets.
2.3+/-0.3
APPLICATION
2.8+/-0.3 0.10
PIN 1.Drain 2.Source 3.Gate UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin Tj Tstg Rth-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Junction temperature Storage temperature Thermal resistance RATINGS UNIT 30 V +/-20 V Tc=25C 75 W Zg=Zl=50 7.5 W C 175 -40 to +175 C C/W Junction to case 2.0 CONDITIONS
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D1 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz,VDD=12.5V Pin=3.0W,Idq=1.0A VDD=15.2V,Po=30W(PinControl) Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.3 30 50 LIMITS TYP MAX. 200 1 1.8 2.3 35 55 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD30HUF1
MITSUBISHI ELECTRIC 1/7
REV.1 14 MAY. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
Silicon MOSFET Power Transistor,520MHz,30W TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 CHANNEL DISSIPATION Pch(W) 80 Ids(A) 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C) 60 40 20 0
0
1
2 3 Vgs(V)
4
5
Vds-Ids CHARACTERISTICS 10
Ta=+25C Vgs=5V
Vds VS. Ciss CHARACTERISTICS 140 120
Vgs=4.5V
8 6 4 2 0 0 2 4 6 Vds(V) 8 10
100 Ciss(pF) 80 60 40 20 0 0
Ids(A)
Vgs=4V
Ta=+25C f=1MHz
Vgs=3.5V
Vgs=3V Vgs=2.5V
5
10 Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 16 14 12 Crss(pF) 10 8 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD30HUF1
MITSUBISHI ELECTRIC 2/7
REV.1 14 MAY. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Pin-Po CHARACTERISTICS
Silicon MOSFET Power Transistor,520MHz,30W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10
Gp Ta=+25C f=520MHz Vdd=12.5V Idq=1.0A
100
Po
50
Po
100 80 d(%) 60
Ta=25C f=520MHz Vdd=12.5V Idq=1.0A
80
40 Pout(W) , Idd(A) d(%) 30 20 10 0 0 2 4 6 Pin(W) 8
Idd
d
60 40 20 0 10 20 30 Pin(dBm) 40
40 20 0 10
0
Vdd-Po CHARACTERISTICS 50 40 Po(W) 30 20 10 0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=520MHz Pin=3W Icq=1.0A Zg=ZI=50 ohm Po
Vgs-Ids CHARACTERISTICS 2 10 8 Idd(A) Ids(A) 6 4 2 0 10 8 6 4 2 0 1.5 2.5 3.5 Vgs(V) 4.5
Vds=10V Tc=-25~+75C -25C +25C
Idd
+75C
RD30HUF1
MITSUBISHI ELECTRIC 3/7
REV.1 14 MAY. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Silicon MOSFET Power Transistor,520MHz,30W EQUIVALENT CIRCUIT(f=520MHz)
V gg V dd
C1
9. 1K O H M
L3
C3
8. 2k O H M
10 0O H M 15 /5p F L1 7/ 5pF L2 R D 30 H U F 1 C2
R F -IN 56 pF 56 pF
R F -O U T
15 /15 pF
15 pF
15 /5/ 7/1 5pF
12 8
5 10 12 10 0
5 8 14 10 0
14
C 1: 220 0pF ,10 uF in parallel C 2: 220 0pF *2 in parallel C 3: 220 0pF ,33 0uF in pa ralle l L1 :3Turn s ,I.D 6 m m ,D 1 .6m m P = 1 s ilver pla tet ed c op per w ire L2 :2Turn s ,I.D 6 m m ,D 1 .6m m P = 1 s ilver pla tet ed c op per w ire L2 :4Turn s ,I.D 6 m m ,D 1 .6m m P = 1 s ilver pla tet ed c op per w ire
N ot e:B o ard m a terial-Teflon s u bs t rate M ic ro s t rip lin e w id th= 4. 2m m / 50O HM ,e r:2 .7, t= 1.6 m m D im ens ions : m m
RD30HUF1
MITSUBISHI ELECTRIC 4/7
REV.1 14 MAY. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Silicon MOSFET Power Transistor,520MHz,30W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=520MHz Zin f=480MHz Zin
f=520MHz Zout
f=480MHz Zout f=440MHz Zout
f=440MHz Zin
Zo=10
Zin , Zout F (MHz) 440 480 520 Zin (ohm) 1.16-j0.14 0.90+j0.35 0.88+j0.84 Zout (ohm) 1.17+j0.74 1.15+j1.07 1.47+j1.24 Conditions Po=40W, Vdd=12.5V,Pin=3.0W Po=38W, Vdd=12.5V,Pin=3.0W Po=35W, Vdd=12.5V,Pin=3.0W
RD30HUF1
MITSUBISHI ELECTRIC 5/7
REV.1 14 MAY. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Silicon MOSFET Power Transistor,520MHz,30W
RD30HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.870 0.880 0.890 0.902 0.911 0.921 0.930 0.931 0.941 0.946 0.946 0.947 0.951 0.957 0.960 0.962 0.962 0.962 0.961 0.961 0.965 0.964 (ang) -173.4 -177.3 -179.5 178.2 176.0 174.1 172.1 170.0 168.0 167.1 166.3 164.2 162.5 160.7 159.1 157.6 155.8 154.2 152.7 151.2 149.6 148.2 (mag) 0.016 0.015 0.013 0.011 0.010 0.008 0.007 0.005 0.004 0.004 0.004 0.004 0.004 0.006 0.007 0.007 0.009 0.009 0.010 0.012 0.012 0.014 S21 (ang) -8.8 -18.0 -23.7 -27.9 -31.1 -31.3 -29.2 -21.8 -9.5 -3.9 7.5 28.3 46.8 53.0 56.5 63.6 64.1 63.5 65.6 65.3 64.6 64.8 (mag) 7.566 4.825 3.398 2.568 1.982 1.588 1.299 1.070 0.907 0.852 0.780 0.673 0.589 0.522 0.464 0.419 0.383 0.341 0.318 0.296 0.270 0.259 S12 (ang) 74.2 63.2 55.1 47.0 40.2 34.5 29.0 23.9 20.3 18.7 15.9 12.5 10.1 6.6 4.1 2.2 -1.2 -3.0 -4.2 -7.4 -8.3 -9.4 (mag) 0.723 0.748 0.778 0.817 0.832 0.857 0.879 0.887 0.901 0.908 0.913 0.916 0.928 0.932 0.936 0.942 0.945 0.946 0.952 0.955 0.955 0.957 S22 (ang) -170.2 -172.5 -173.9 -175.6 -177.6 -179.7 178.3 176.3 174.2 173.4 172.3 170.5 168.6 166.7 164.9 163.1 161.6 160.0 158.2 157.0 155.4 153.6
RD30HUF1
MITSUBISHI ELECTRIC 6/7
REV.1 14 MAY. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
Silicon MOSFET Power Transistor,520MHz,30W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RD30HUF1
MITSUBISHI ELECTRIC 7/7
REV.1 14 MAY. 2003

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