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RB215T-60
Diodes
Schottky barrier diode
RB215T-60
Applications Switching power supply External dimensions (Unit : mm)
4.50.3 0.1
Structure
8.00.2 12.00.2
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
1.2
10.00.3 0.1
2.80.2 0.1
15.00.4 0.2 13.5MIN
Construction Silicon epitaxial planar
1.3 0.8 (1) (2) (3)
5.00.2
0.70.1 0.05
8.0
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2
Electrical characteristic (Ta=25C)
Symbol VRM VR Io IFSM Tj Tstg
Limits 60 60 20 100 150 -40 to +150
Unit V V A A
Symbol VF Forward characteristics IR Reverse characteristics Thermal impedance jc
Parameter
Min. -
Typ. -
Max. 0.58 600 1.75
Unit V A /W
Conditions IF=10A VR=60V junction to case
Rev.A
1/3
RB215T-60
Diodes
Electrical characteristic curves
10 Ta=150 1000000 Ta=150 Ta=125 10000 f=1MHz
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
100000
Ta=125 1 Ta=75 Ta=-25 Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10000 1000
1000
Ta=75 Ta=25
100
100 10 1 Ta=-25
0.1
10
0.01 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
0.1 0 10 20 30 40 50 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 60
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
540
1000
2000 Ta=25 Ta=25 VR=30V VR=60V n=30pcs n=30pcs Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
800 700 600 500 400 300 200 100
AVE:8.172uA AVE:140.7uA :1.9469uA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
530
REVERSE CURRENT:IR(uA)
Ta=25 IF=10A n=30pcs
900
1900
520
1800
510 AVE:515.0mV 500
1700
1600 AVE:1704.1pF 1500
490 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
300
30
1000
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm
1cyc 8.3ms
25 20 15 10 5 0 trr DISPERSION MAP
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
100
10
AVE:166.0A
AVE:23.3ns
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
IFSM DISRESION MAP
1000 Ifsm
100
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Mounted on epoxy board IF=5A IM=100mA time
30
PEAK SURGE FORWARD CURRENT:IFSM(A)
t
10
FORWARD POWER DISSIPATION:Pf(W)
300us 1ms
Rth(j-a)
D=1/2 20 Sin(180)
DC
100
1
Rth(j-c)
10
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0.1
10
1000
0 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 40
TIME:t(s) Rth-t CHARACTERISTICS
Rev.A
2/3
RB215T-60
Diodes
15
50
50 0A 0V DC Io t T VR D=t/T VR=30V Tj=150 40 DC 30 D=1/2 20 10 Sin(180) 0 0 25 50 75 100 125 150 0 25 50
0A 0V
Io t T VR D=t/T VR=30V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
10 D=1/2 DC Sin(180) 5
30 D=1/2 20 10 Sin(180) 0
0 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
40
REVERSE POWER DISSIPATION:PR (W)
75
100
125
150
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
30 No break at 30kV 25 20 15 AVE:7.50kV 10 5 0
ELECTROSTATIC DISCHARGE TEST ESD(KV)
C=200pF R=0 ESD DISPERSION MAP
C=100pF R=1.5k
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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