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| RB095B-60 Diodes Schottky barrier diode RB095B-60 Applications General rectification External dimensions (Unit : mm) Land size figure 6.0 6.50.2 5.10.2 0.1 2.30.2 0.1 0.50.1 5.50.3 0.1 1.5 9.50.6 Features 1) Power mold type. (CPD3) 2) Low VF 3) High reliability C0.5 1.50.3 CPD 2.3 2.3 0.75 Construction Silicon epitaxial planar 0.9 1 2 3 0.650.1 0.50.1 1.00.2 2.5 Structure 2.30.2 2.30.2 ROHM : CPD JEITA : SC-63 Manufacture Date Taping dimensions (Unit : mm) 4.00.1 2.00.05 8.00.1 1.550.1 0 2.50.1 0.40.1 7.50.05 10.10.1 6.80.1 8.00.1 3.00.1 00.5 13.50.2 10.10.1 2.70.2 TL Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak 60Hz1cyc*1 Junction temperature Tj Storage temperature Tstg Limits 60 60 6 45 150 -40 to +150 Unit V V A A (*1) Rating of per diode : Io/2 Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.58 300 6.0 Unit V A /W Conditions IF=3.0A VR=60V junction to case Rev.B 16.00.2 3.0 2.0 1.6 1.6 6.0 1/3 RB095B-60 Diodes Electrical characteristic curves 10 Ta=150 FORWARD CURRENT:IF(A) 1000000 100000 REVERSE CURRENT:IR(uA) Ta=150 Ta=125 1000 f=1MHz Ta=125 1 Ta=75 Ta=-25 0.1 Ta=25 10000 1000 100 10 1 0.1 0.01 0 10 20 30 Ta=75 Ta=25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=-25 10 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 40 50 60 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 550 540 530 520 510 AVE:425.2mV :1.6771mV 200 Ta=25 IF=3A n=30pcs 800 Ta=25 VR=60V n=30pcs 180 REVERSE CURRENT:IR(uA) 750 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:VF(mV) 160 140 120 100 80 60 40 20 0 AVE:20.8uA 700 650 600 550 500 450 400 350 300 AVE:514.4pF Ta=25 f=1MHz VR=0V n=10pcs AVE:532.4mV 500 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 Ifsm 8.3ms 1cyc 250 200 150 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 AVE:8.30ns Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm 8.3ms 8.3ms 1cyc 100 AVE:77.0A 100 50 0 10 1 1 trr DISPERSION MAP Mounted on epoxy board 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 300 250 200 150 100 50 0 TIME:t(ms) IFSM-t CHARACTERISTICS 100 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) IM=100mA IF=5 10 Rth(j-a) 1ms time PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 8 FORWARD POWER DISSIPATION:Pf(W) 300us 10 Rth(j-c) 1 6 Sin(180) D=1/2 DC 4 2 AVE:77.0A 0.1 0.001 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0 5 10 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 15 Rev.B 2/3 RB095B-60 Diodes 15 15 0A 0V Sin(180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 15 Io t T D=1/2 VR D=t/T VR=30V Tj=150 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io t T VR D=t/T VR=30V Tj=150 DC 10 10 REVERSE POWER DISSIPATION:PR (W) 10 DC D=1/2 D=1/2 DC 5 5 Sin(180) 5 Sin(180) 0 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 AVE:16.5kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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