View RA45H7687M1-101_1300616.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA45H7687M1
BLOCK DIAGRAM
2 3
RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that VGG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power. FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.8V, VGG=0V)
1
4
5
1 2 3 4 5
RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
* Pout>45W, T>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW * Broadband Frequency Range: 764-870MHz * Metal cap structure that makes the improvements of RF radiation simple * Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V * Module Size: 67 x 18 x 9.9 mm * Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
PACKAGE CODE: H2M
RoHS COMPLIANCE * RA45H7687M1 is a RoHS compliant product. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever, it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.
ORDERING INFORMATION: ORDER NUMBER RA45H7687M1-101 SUPPLY FORM Antistatic tray, 10 modules/tray
th
RA45H7687M1
MITSUBISHI ELECTRIC 1/9
18 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA45H7687M1
MAXIMUM RATINGS (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER VDD VGG1 VGG2 Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage 1 Gate Voltage 2 Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG1=3.4V 7%, VGG2<5V, Pin=0W VGG2<5V, VDD<12.8V, Pin=50mW VGG1=3.4V 7%, VDD<12.8V, Pin=50mW f=764-870MHz, VGG1=3.4V 7%, VGG2<5V RATING 17 4.5 6 100 60 -30 to +100 -40 to +110 UNIT V V V mW W C C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
F Pout1 T 2fo 3fo in IDD Pout2 -- -- Frequency Range Output Power 1 Total Efficiency 2 3
nd nd
CONDITIONS
VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW VDD=12.8V VGG1=3.4V VGG2=5V Pin=50mW VDD=17V, VGG1=VGG2=0V, Pin=0W VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=2dBm VDD=10.0-15.2V, Pin=1-100mW, 1.5MIN
764 45 33
TYP
MAX
870
UNIT
MHz W %
Harmonic Harmonic
-40 -35 3:1 1 1.5 No parasitic oscillation No degradation or destroy
dBc dBc -- mA W --
Input VSWR Leakage Current Output Power 2* Stability Load VSWR Tolerance
--
*: This is guaranteed as design value. All parameters, conditions, ratings, and limits are subject to change without notice.
RA45H7687M1
MITSUBISHI ELECTRIC 2/9
18 Jan 2007
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA45H7687M1
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
O UT PUT PO WER, T O T AL EFFICIENCY, v e rsus FREQ UENCY
80 OUTPUT POWER Pout(W) TOTAL EFFICIENCY(%) 70 60 50 40 30 20 10 760 780 800 820 840 FREQUENCY f(M Hz) 860 880
T
V DD =12.8V V GG1 =3.4V V GG2 =5V P in=50m W P out
2 ,3
-30 -40 HARMONICS (dBc) -50
nd
rd
HARM O NICS v e rsus FREQ UENCY
V DD =12.8V V GG1 =3.4V V GG2 =5V P in=50m W
3 rd
2 nd
-60 -70 -80 760 780 800 820 840 FREQUENCY f(MHz) 860 880
INPUT VSWR v e rsus FREQ UENCY
5
V DD =12.8V V GG1 =3.4V V GG2 =5V P in=50m W
INPUT VSWR in (-)
4
3
2
in
1 760 780 800 820 840 FREQUENCY f(MHz) 860 880
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER Pout(dBm) 50
Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
24 OUTPUT POWER Pout(dBm) DRAIN CURRENT DD (A) I POWER GAIN Gp(dB) 20 16 12 60 50 40 30 20
IDD
Gp Pout
24 DRAIN CURRENTIDD(A) DRAIN CURRENT DD (A) I 20 16 12 8 4 0 20
POWER GAIN Gp(dB)
40 30 20
IDD
f=764M Hz V DD=12.8V V GG1 =3.4V V GG2 =5V
8 4 0 20
10 0 -10 -5 0 5 10
10 0 -10 -5 0 5 10
f=806M Hz V DD=12.8V V GG1 =3.4V V GG2 =5V
15
15
INPUT POW ER P in(dBm)
INPUT POW ER P in(dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER Pout(dBm) 50 40 30 20 10 0 -10 -5 0 5 10
IDD
Gp Pout
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
24 OUTPUT POWER Pout(W) DRAIN CURRENT DD (A) I 20 16 12 8 4 0 20 90 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 DRAIN VOLTAGE V D D (V) 14 16
IDD
Pout f=764M Hz V GG1 =3.4V V GG2 =5V Pin=50m W
18 16 14 12 10 8 6 4 2 0
POWER GAIN Gp(dB)
f=870M Hz V DD=12.8V V GG1=3.4V V GG2=5V
15
INPUT POW ER P in(dBm)
RA45H7687M1
MITSUBISHI ELECTRIC 3/9
18 Jan 2007
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA45H7687M1
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
O U T PU T PO WER and D R AIN C U R R EN T v e rsus D R AIN VO LT AG E
90 OUTPUT POWER Pout(W) 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 16 DRA IN V OLTA GE V D D (V )
ID D
P out f=806M Hz V GG1 =3.4V V GG2 =5V P in=50m W
O U T PU T PO WER and D R AIN C U R R EN T v e rsus D R AIN VO LT AG E
18 OUTPUT POWER Pout(W) 16 DRAIN CURRENT DD(A) I 14 12 10 8 6 4 2 0 90 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 16 DRA IN V OLTA GE V D D (V )
ID D
P out f=870M Hz V GG1 =3.4V V GG2 =5V P in=50m W
18 16 14 12 10 8 6 4 2 0 DRAIN CURRENT DD(A) I
O U T PU T PO WER and D R AIN C U R R EN T v e rsus G AT E VO LT AG E2
OUTPUT POWER Pout(W) (dBm) 60 50 40 30 20 10 0 0 1
ID D
P out (W) f=764M Hz V DD =12.8V V GG1 =3.4V P in=50m W P out (d Bm )
O U T PU T PO WER and D R AIN C U R R EN T v e rsus G AT E VO LT AG E2
12 DRAIN CURRENT I D(A) D 10 8 6 4 2 0 5 OUTPUT POWER Pout(W) (dBm) 60 50 40 30 20 10 0 0 1
ID D
P out (d Bm )
12 DRAIN CURRENT DD (A) I 10 8 6 4 2 0 5
P out (W)
f=806M Hz V DD =12.8V V GG1 =3.4V P in=50m W
2 3 4 GA TE V OLTA GE V GG 2 (V )
2 3 4 GA TE V OLTA GE V GG 2 (V )
O UT PUT PO WER and DRAIN CURRENT v e rsus G AT E VO LT AG E2
OUTPUT POWER Pout(W) (dBm) 60 50 40 30 20 10 0 0 1
ID D
O UT PUT PO WER and DRAIN CURRENT v e rsus G AT E VO LT AG E2
12 DRAIN CURRENT DD (A) I 10 8 6 4 OUTPUT POWER Pout(W) (dBm) 60 50 40 30 20 10 0 1 2 3 4 GATE V OLTA GE V GG2 (V ) 5
f=764M Hz V DD =12.8V V GG1 =3.4V P in=2dBm
12 DRAIN CURRENT DD (A) I DRAIN CURRENT DD (A) I 10 8
P out (dBm )
P out (dBm )
6
ID D
P out (W)
P out (W)
4 2 0
f=870M Hz V DD =12.8V V GG1 =3.4V P in=50m W
2 0 5
2 3 4 GA TE V OLTA GE V GG2 (V )
O UT PUT PO WER and DRAIN CURRENT v e rsus G AT E VO LT AG E2
OUTPUT POWER Pout(W) (dBm) OUTPUT POWER Pout(W) (dBm) 60 50 40 30 20 10
P out (W) f=806M Hz V DD =12.8V V GG1 =3.4V P in=2dBm P out (dBm )
O UT PUT PO WER and DRAIN CURRENT v e rsus G AT E VO LT AG E2
12 DRAIN CURRENT DD (A) I 10 8 6 60 50 40 30 20 10 0 1 2 3 4 GA TE V OLTA GE V GG2 (V ) 5
ID D
P out (W) f=870M Hz V DD =12.8V V GG1 =3.4V P in=2dBm P out (dBm )
12 10 8 6 4 2 0
ID D
4 2 0
0 1 2 3 4 5 GA TE V OLTA GE V GG2 (V )
RA45H7687M1
MITSUBISHI ELECTRIC 4/9
18 Jan 2007
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA45H7687M1
OUTLINE DRAWING (mm)
1 RF Input added Gate Voltage 1(Pin & VGG1) 2 Gate Voltage 2(VGG2) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
RA45H7687M1
MITSUBISHI ELECTRIC 5/9
18 Jan 2007
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA45H7687M1
TEST BLOCK DIAGRAM
+ DC Pow er Supply V GG1 Pow er Meter
DUT
R1 C1 1 2 3 4
5
Spectrum Analyzer
Signal Generator
Attenuator
Preamplifier
Attenuator
Directional Coupler
ZG=50 C2
ZL=50
Directional Coupler
Attenuator
Pow er Meter
C3
C4
VA GG1
+ DC Pow er Supply V GG2
+ DC Pow er Supply V DD
C1: 4700pF, C2: 1000pF, R1: suitable. Please refer the detail below. C3, C4: 4700pF, 22uF in parallel VGG1=3.4V
1 RF Input added Gate Voltage 1(Pin & VGG1) 2 Gate Voltage 2(VGG2) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
4 1
5
2
NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm. External resistance connected to VGG1; impedance between Pin&VGG1 and ground needs to make high impedance that doesn't prevent RF characteristic on this module.
RA45H7687M1
MITSUBISHI ELECTRIC 6/9
18 Jan 2007
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA45H7687M1
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the glass-epoxy substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=45W, VDD=12.8V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T=33% VDD Stage (W) (W) (V) (C/W) (A) 1st 0.05 3.0 3.5 0.62 12.8 2nd 3.0 45.0 0.6 9.96 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.8V x 0.62A - 3.0W + 0.05W) x 3.5C/W = Tcase + 17.5 C Tch2 = Tcase + (12.8V x 9.96A - 45.0W + 3.0W) x 0.6C/W = Tcase + 51.3 C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90C. For an ambient temperature Tair=60C and Pout=45W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (45W/33% - 45W + 0.05W) = 0.33 C/W When mounting the module with the thermal resistance of 0.33 C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 47.5 C Tch2 = Tair + 81.3 C The 175C maximum rating for the channel temperature ensures application under derated conditions.
RA45H7687M1
MITSUBISHI ELECTRIC 7/9
18 Jan 2007
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA45H7687M1
Output Power Control: Depending on linearity, the following three methods are recommended to control the output power: a) Non-linear FM modulation at high power operating: By the gate voltages (VGG1 and VGG2). When the gate voltages are close to zero, the nominal output signal (Pout=45W) is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. (On the following, V GG1 has to be kept in 3.4V.) Around VGG2=0V(minimum), the output power and drain current increases substantially. Around VGG2=4V (typical) to VGG2=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. (On the following, V GG1 has to be kept in 3.4V.) VGG2 is used to set the drain's quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.
RA45H7687M1
MITSUBISHI ELECTRIC 8/9
18 Jan 2007
th
SALES CONTACT
JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-4140
HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: scdinfo@mehk.com Phone: +852 2510-0555 Fax: +852 2510-9822
FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 25 Boulevard des Bouvets F-92741 Nanterre Cedex, France Email: semis.info@meg.mee.com Phone: +33-1-55685-668 Fax: +33-1-55685-739
SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road #3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: semicon@asia.meap.com Phone: +65 64 732 308 Fax: +65 64 738 984
ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-039-6053-10 Fax: +39-039-6053-212
TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: metwnssi@metwn.meap.com Phone: +886-2-2836-5288 Fax: +886-2-2833-9793
U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: semis.info@meuk.mee.com Phone: +44-1707-278-900 Fax: +44-1707-278-837
U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085 Email: customerservice@edg.mea.com Phone: 408-730-5900 Fax: 408-737-1129
CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918
AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road Rydalmere, NSW 2116 Sydney, Australia Email: semis@meaust.meap.com Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245
RA45H7687M1
MITSUBISHI ELECTRIC 9/9
18 Jan 2007
th

▲Up To Search▲

Price & Availability of RA45H7687M1-101

	To Download RA45H7687M1-101 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .