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| PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 (4.83) 0.178 (4.52) 45 REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER 0.050 (1.27) 0.100 (2.54) NOM 0.215 (5.46) NOM 0.020 (0.51) SQ 2PLCS COLLECTOR SCHEMATIC COLLECTOR 45 0.020 (0.51) RADIUS NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Orange stripe on the flange. EMITTER DESCRIPTION The QSD733 is a silicon phototdarlington encapsulated in an infrared transparent, black TO-18 package. FEATURES * NPN Silicon Photodarlington * Package Type: Plastic TO-18 * Matched Emitter: QED523 * Narrow Reception Angle, 40 * Daylight Filter * Package material and color: black epoxy * High Sensitivity 2001 Fairchild Semiconductor Corporation DS300364 7/16/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. ! = 880 nm, AlGaAs. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25C) SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength Reception Angle Collector-Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector Current(5) Saturation Voltage(5) Rise Time Fall Time VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.125 mW/cm2, VCE = 5 V Ee = 0.125 mW/cm2, IC = 2.0 mA VCC = 5 V, RL = 100 , IC = 0.15 mA !PS " ICEO BVCEO BVECO IC(ON) VCE(sat) tr tf -- -- -- 30 5 5.0 -- -- -- 880 20 -- -- -- -- -- 20 50 -- -- 100 -- -- -- 1.0 -- -- nm Deg. nA V V mA V s www.fairchildsemi.com 2 OF 4 7/16/01 DS300364 PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 Figure 1. Light Current vs. Radiant Intensity 103 VCE = 5V GaAs Light Source Figure 2. Angular Response Curve 110 120 130 140 100 90 80 70 60 50 40 30 20 10 0 1.0 IC(ON) - Light Current (mA) 102 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 101 0.1 1 Ee - Radiant Intensity (mW/cm ) 2 Figure 3. Dark Current vs. Collector - Emitter Voltage 101 101 Figure 4. Light Current vs. Collector - Emitter Voltage Ie=0.2mW/cm 2 Ie=0.15mW/cm 2 ICEO - Dark Current (nA) 100 IL - Normalized Light Current 100 Ie=0.1mW/cm 2 10-1 Ie=0.125mW/cm 2 10-1 10-2 10-2 Normalized to: VCE = 5V Ie = 0.125mW/cm 2 TA = 25 oC 10-3 0 5 10 15 20 25 30 10-3 0.1 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 105 Normalized to: VCE = 25V TA = 25 oC ICEO - Normalized Dark Current 10 4 VCE =25V VCE =10V 10 3 102 101 100 10-1 25 50 75 o 100 TA - Ambient Temperature ( C) DS300364 7/16/01 3 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 OF 4 7/16/01 DS300364 |
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