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| TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 150A, VCEX 1000V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol VCBO VCEX VEBO IC IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass Mounting M6 Terminal M6 A.C.1minute Recommended Value 2.5 3.9 25 40 Recommended Value 2.5 3.9 25 40 Typical Value TC 25 40 VBE 2V Conditions Ratings QCA150AA100 1000 1000 7 150 150 8 1000 150 40 125 2500 4.7 48 4.7 48 540 Tj 25 Unit V V V A A A W V Nm ( f B) g Electrical Characteristics Symbol ICBO IEBO VCEX SUS Tj 25 Conditions VCB 1000V VEB 7V Ic 30A IB2 5A 1000 75 100 2.50 3.50 3.00 Vcc 600V Ic 150A 3A IB1 3A IB2 Ic 150A Transistor part Diode part 15.00 3.00 1.80 0.125 0.6 V /W s V V Ic 150A VCE 2.8V Ic 150A VCE 5V Ic 150A IB 3A Ic 150A IB 3A Ratings Min. Max. 1.0 400 Unit mA mA V Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) hFE VCE(sat) VBE(sat) ton ts tf VECO Rth(j-c) 23 QCA150AA100 24 TRANSISTOR MODULE QCA150AA120 UL;E76102 M QCA150AA120 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 150A, VCEX 1200V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol VCBO VCEX VEBO IC IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass Mounting M6 Terminal M6 A.C.1minute Recommended Value 2.5 3.9 25 40 Recommended Value 2.5 3.9 25 40 Typical Value TC 25 40 VBE 2V Conditions Ratings QCA150AA120 1200 1200 10 150 150 8 1000 150 40 125 2500 4.7 48 4.7 48 470 Tj 25 Unit V V V A A A W V Nm ( f B) g Electrical Characteristics Symbol ICBO IEBO VCEX SUS Tj 25 Conditions VCB 1200V VEB 10V Ic 30A IB2 6A 1200 75 3.00 3.50 3.00 Vcc 600V Ic 150A 3A IB1 3A IB2 Ic 150A Transistor part Diode part 15.00 3.00 1.80 0.125 0.6 V /W s V V Ic 150A VCE 5V Ic 150A IB 3A Ic 150A IB 3A Ratings Min. Max. 2.00 600 Unit mA mA V Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) hFE VCE(sat) VBE(sat) ton ts tf VECO Rth(j-c) 25 QCA150AA120 26 |
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