|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SIDELED(R) Super-Bright, Hyper-Red GaAIAs-LED LH A674 Besondere Merkmale q q q q q q q q Features q q q q q q q q color of package: white double heterojunction in GaAIAs technology superior luminous intensity for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and reflow soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839 Typ Type Emissions- Farbe der farbe Lichtaustrittsflache Color of Color of the Emission Light Emitting Area colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 10 mA IV (mcd) 6.3 10.0 16.0 10.0 ... ... ... ... 32 20 32 50 Luminous Flux IF = 10 mA V (mlm) 45 (typ.) 75 (typ.) - Ordering code LH A674-KM hyper-red LH A674-L LH A674-M LH A674-LN Q62703-Q2546 Q62703-Q2830 Q62703-Q2831 Q62703-Q2832 Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 1 1998-11-12 VPL06880 Gehausefarbe: wei Doppel-Heterostruktur in GaAlAs Technologie besonders hohe Lichtstarke als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Reflow-Lottechniken geeignet gegurtet (12-mm-Filmgurt) Storimpulsfest nach DIN 40839 LH A674 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Montage auf PC-Board*) (Padgroe je 16 mm2) mounted on PC-Board*) (pad size 16 mm2 each) *) PC-board: FR4 Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 3 90 V mW Rth JA 430 K/W Semiconductor Group 2 1998-11-12 LH A674 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 3 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 s, RL = 50 Symbol Symbol (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 Werte Values 660 Einheit Unit nm 645 nm 22 nm 120 1.75 2.6 0.01 10 25 Grad deg. V V A A pF (typ.) tr (typ.) tf 140 110 ns ns Semiconductor Group 3 1998-11-12 LH A674 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve 100 % rel 80 OHL01698 V 60 pure-green green orange super-red red 20 0 400 450 500 550 yellow 40 600 650 hyper-red blue nm 700 Abstrahlcharakteristik Irel = f () Radiation characteristic 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 10 08 06 04 0 20 40 60 80 100 120 0 Semiconductor Group 4 1998-11-12 LH A674 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C 10 3 OHL01686 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) F mA tP D= tP T T F F 60 mA 50 OHL01661 D = 0.005 0.01 0.02 0.05 0.1 10 2 0.2 40 30 5 0.5 DC 20 10 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp 0 0 20 40 60 80 C 100 TA Semiconductor Group 5 1998-11-12 LH A674 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 6 1998-11-12 LH A674 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) (2.4) 2.8 2.4 4.2 3.8 0.7 Cathode Cathode marking 2.54 spacing (1.4) 1.1 0.9 Anode (0.3) (2.85) (2.9) (R1) 3.8 3.4 4.2 3.8 Kathodenkennzeichnung: Cathode mark: abgeschragte Ecke bevelled edge Semiconductor Group 7 1998-11-12 GPL06880 |
Price & Availability of Q62703-Q2832 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |