View Q62702-C2257_1298835.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BCR 135
NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (R1 =10k, R2=47k)
Type BCR 135
Marking WJs
Ordering Code Q62702-C2257
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102 C Junction temperature Storage temperature Symbol Value 50 50 6 20 100 200 150 65...+150 mA mW C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
350 240
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
1
Jun-18-1997
BCR 135
Electrical Characteristics at TA=25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage Symbol min. Values typ. 10 0.21 max. 100 167 0.3 1 1.4 13 0.24 k nA A V V Unit
V(BR)CEO V(BR)CBO ICBO IEBO hFE VCEsat Vi(off) Vi(on) R1 R1/R2
50 50 70 0.5 0.5 7 0.19
IC = 100 A, IB = 0
Collector-base breakdown voltage
IC = 10 A, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 A, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
AC Characteristics Transition frequency
fT Ccb
-
150 3
-
MHz pF
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300s; D < 2% Semiconductor Group
2
Jun-18-1997
BCR 135
DC Current Gain hFE = f (IC )
Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
10
3
VCEsat = f (IC ), hFE = 20
10 2
mA
h FE
10
2
IC
10 1
10
1
10
0
10
-1
10
0
10
1
mA
10 0 0.0
0.2
0.4
0.6
V
1.0
IC
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage Vi(off) = f (IC )
VCE = 0.3V (common emitter configuration)
10
2
VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0
IC
10
1
IC
10
-1
10
0 -2
10
10
-1
10
-1
10
0
10
1
10
V
-3
0.0
0.5
1.0
V
2.0
Vi(on)
Vi(off)
Semiconductor Group
3
Jun-18-1997
BCR 135
Total power dissipation Ptot = f (TA *;TS) * Package mounted on epoxy
300
mW
Ptot
200
TS TA
150
100
50
0 0
20
40
60
80
100
120 C
150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10
K/W 3
10 3
10
2
R thJS
Ptotmax / PtotDC
10 2
10
1
10
0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10
-1
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Semiconductor Group
4
Jun-18-1997

▲Up To Search▲

Price & Availability of Q62702-C2257

	To Download Q62702-C2257 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .