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| BAW 78M Silicon Switching Diode Preliminary data * Switching applications * High breakdown voltage 4 5 3 2 1 VPW05980 Type BAW 78M Marking GDs Ordering Code Pin Configuration Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipation, T S 110 C Junction temperature Storage temperature Symbol Values 400 400 1 1 10 1 150 - 65 ...+150 Unit V A VR VRM IF I FM I FS Ptot Tj T stg W C Thermal Resistance Junction - ambient 1) RthJA RthJS 95 40 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jul-27-1998 1998-11-01 BAW 78M Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V Unit V(BR) VF 400 I (BR) = 100 A Forward voltage IF = 1 A IF = 2 A Reverse current - - 1.6 2 1 50 A IR IR - VR = 400 V Reverse current VR = 400 V, T A = 150 C AC characteristics Diode capacitance CD trr - 10 1 - pF ns VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA Test circuit for reverse recovery time DUT tr 10% tp t F t rr t F Oscillograph 90% R = 20 mA EHN00020 VR Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF Semiconductor Group Semiconductor Group 22 Jul-27-1998 1998-11-01 BAW 78M Forward current IF = f (TA*;TS) * Package mounted on epoxy 1200 mA TS 800 IF TA 600 400 200 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 2 K/W IFmax / IFDC - RthJS 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Jul-27-1998 1998-11-01 BAW 78M Forward current IF = f V F) Reverse current IR = f (TA) T A = 25C 10 1 BAS 78A...D EHB00047 BAS 78A...D EHB00048 10 5 F A nA R 10 0 10 5 4 max 10 -1 10 5 3 typ 10 -2 10 2 5 10 -3 0 1 V 2 10 1 0 50 100 C 150 VF TA Semiconductor Group Semiconductor Group 44 Jul-27-1998 1998-11-01 |
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