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PF08134B
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
REJ03G0075-0101Z Rev.1.01 May 13, 2004
Application
* Triple band amplifier for GSM850 (824 MHz to 849 MHz) and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz). * For 3.5 V & GPRS Class12 operation compatible
Features
* * * * * * All in one including output matching circuit Simple external circuit Simple power control High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 8.0 x 10.0 x 1.5 mm Max High efficiency 47% Typ at 33.5 dBm for GSM850 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
* RF-Q-8
5 G6 87 34 2G 1
1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS & Pout PCS 6: Vdd2 7: Vctl 8: Pin DCS & Pin PCS G: GND
Rev.1.01, May 13, 2004, page 1 of 13
PF08134B
Absolute Maximum Ratings *1
(Tc = 25C)
Item Supply voltage Supply current Vctl voltage Vapc voltage Input power Operating case temperature * Storage temperature Output power
2
Symbol Vdd Idd GSM Idd DCS Vctl Vapc Pin Tc (op) Tstg Pout GSM Pout DCS
Rating 7.0 5.0 3.5 2 4 4 10 -30 to +100 -40 to +100 5 3
Unit V V A A V V dBm C C W W
Remark at no-operation at operation (50 load)
Notes: 1. The maximum ratings shall be valid over both the GSM850-band (824 to 849 MHz), and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz). 2. These are specified at pulsed operation with pulse width = 1154 s and duty cycle of 2:8.
Electrical Characteristics for DC
(Tc = 25C)
Item Drain cutoff current Vapc control current Vctl control current Symbol Ids Iapc Ictl Min -- -- -- Typ -- -- -- Max 20 2.0 2 Unit A mA A Test Condition Vdd = 4.7 V, Vapc = 0 V, Vctl = 0.2 V Vapc = 2.2 V Vctl = 3 V
Rev.1.01, May 13, 2004, page 2 of 13
PF08134B
Electrical Characteristics for GSM850 band
(Tc = 25C) Test conditions unless otherwise noted: f = 824 to 849 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 , Tc = 25C, Pulse operation with pulse width 1154 s and duty cycle 2:8 shall be used.
Item Frequency range Band select (GSM active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Idd at Low power Isolation Isolation at DCS RF-output when GSM is active Switching time Stability f Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) -- -- -- Symbol Min 824 2.0 -2 0.2 3.1 40 -- -- -- -- 33.5 32.0 -- -- -- Typ -- -- -- -- 3.5 47
-10.5 -16.5
Max 849 2.8 2 2.2 4.5 --
-2.5 -2.5 -2.5
Unit MHz V dBm V V % dBm dBm dBm -- dBm dBm mA dBm dBm
Test Condition
Pout GSM = 33.5 dBm, Vapc controlled
-- 1.5 34.0 32.5 -- -48 -25
3 -- -- 300 -37 -18
Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85C Pout GSM = 7 dBm Vapc = 0.2 V Pout GSM = 33.5 dBm, Measured at f = 1648 to 1698 MHz Pout GSM = 5 to 33.5 dBm Vdd = 3.1 to 4.5 V, Pout GSM 33.5 dBm, Vapc GSM 2.2 V, Rg = 50 , Output VSWR = 6 : 1 All phase angles Vdd = 3.1 to 4.5 V, Pout GSM 33.5 dBm, Vapc GSM 2.2 V, Rg = 50 , t = 20 sec., Output VSWR = 10 : 1 All phase angles Vdd = 3.1 to 4.2 V, Pout GSM 33.5 dBm, Vapc GSM 2.2 V, Rg = 50 , t = 20 sec., Tc 90C, Output VSWR = 10 : 1 All phase angles Pout GSM = 5 to 33.5 dBm Pout GSM = 5 to 33.5 dBm, 4% AM modulation at input 50 kHz modulation frequency
tr, tf --
--
1
2
s --
No parasitic oscillation < -36 dBm No degradation or Permanent degradation No degradation or Permanent degradation -- -- 160 15 200 20
Load VSWR tolerance
--
--
Load VSWR tolerance at GPRS CLASS 12 operation Slope Pout/Vapc AM output
--
--
-- --
dB/V %
Rev.1.01, May 13, 2004, page 3 of 13
PF08134B
Electrical Characteristics for DCS1800 band
(Tc = 25C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 , Tc = 25C, Pulse operation with pulse width 1154 s and duty cycle 2:8 shall be used.
Item Frequency range Band select (DCS active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Idd at Low power Isolation Switching time Stability f Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) -- -- tr, tf -- Symbol Min
1710
Typ -- -- -- -- 3.5 47
-14.5 -7.5
Max 1785 0.1 2 2.2 4.5 --
-2.5 -2.5 -2.5
Unit MHz V dBm V V % dBm dBm dBm -- dBm dBm mA dBm s --
Test Condition
0 -2 0.2 3.1 40 -- -- -- -- 32.5 31.0 -- -- --
Pout DCS = 32.5 dBm, Vapc controlled
-- 1.5 33.5 32.0 -- -42 1
3 -- -- 150 -37 2
Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85C Pout DCS = 5 dBm Vapc = 0.2 V Pout DCS = 0 to 32.5 dBm Vdd = 3.1 to 4.5 V, Pout DCS 32.5 dBm, Vapc DCS 2.2 V, Rg = 50 , Output VSWR = 6 : 1 All phase angles Vdd = 3.1 to 4.5 V, Pout DCS 32.5 dBm, Vapc DCS 2.2 V, Rg = 50 , t = 20 sec., Output VSWR = 10 : 1 All phase angles Vdd = 3.1 to 4.2 V, Pout DCS 32.5 dBm, Vapc DCS 2.2 V, Rg = 50 , t = 20 sec., Tc 90C, Output VSWR = 10 : 1 All phase angles Pout DCS = 0 to 32.5 dBm Pout DCS = 0 to 32.5 dBm, 4% AM modulation at input 50 kHz modulation frequency
No parasitic oscillation < -36 dBm No degradation or Permanent degradation No degradation or Permanent degradation -- -- 160 15 200 20
Load VSWR tolerance
--
--
Load VSWR tolerance at GPRS CLASS 12 operation Slope Pout/Vapc AM output
--
--
-- --
dB/V %
Rev.1.01, May 13, 2004, page 4 of 13
PF08134B
Electrical Characteristics for DCS1900 band
(Tc = 25C) Test conditions unless otherwise noted: f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 , Tc = 25C, Pulse operation with pulse width 1154 s and duty cycle 2:8 shall be used.
Item Frequency range Band select (DCS active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Idd at Low power Isolation Switching time Stability f Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) -- -- tr, tf -- Symbol Min
1850
Typ -- -- -- -- 3.5 47
-15 -8
Max 1910 0.1 2 2.2 4.5 --
-3 -3 -3
Unit MHz V dBm V V % dBm dBm dBm -- dBm dBm mA dBm s --
Test Condition
0 -2 0.2 3.1 40 -- -- -- -- 32.0 30.5 -- -- --
Pout DCS = 32.0 dBm, Vapc controlled
-- 1.5 33.0 31.5 -- -42 1
3 -- -- 150 -37 2
Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85C Pout DCS = 5 dBm Vapc = 0.2 V Pout DCS = 0 to 32.0 dBm Vdd = 3.1 to 4.5 V, Pout DCS 32.0 dBm, Vapc DCS 2.2 V, Rg = 50 , Output VSWR = 6 : 1 All phase angles Vdd = 3.1 to 4.5 V, Pout DCS 32.0 dBm, Vapc DCS 2.2 V, Rg = 50 , t = 20 sec., Output VSWR = 10 : 1 All phase angles Vdd = 3.1 to 4.2 V, Pout DCS 32.0 dBm, Vapc DCS 2.2 V, Rg = 50 , t = 20 sec., Tc 90C, Output VSWR = 10 : 1 All phase angles Pout DCS = 0 to 32.0 dBm Pout DCS = 0 to 32.0 dBm, 4% AM modulation at input 50 kHz modulation frequency
No parasitic oscillation < -36 dBm No degradation or Permanent degradation No degradation or Permanent degradation -- -- 160 15 200 20
Load VSWR tolerance
--
--
Load VSWR tolerance at GPRS CLASS 12 operation Slope Pout/Vapc AM output
--
--
-- --
dB/V %
Rev.1.01, May 13, 2004, page 5 of 13
PF08134B
Circuit Diagram
PIN7 Vctl PIN6 Vdd2
PIN8 Pin DCS
PIN5 Pout DCS
PIN1 Pin GSM
PIN4 Pout GSM
Bias circuit PIN2 Vapc PIN3 Vdd1
Rev.1.01, May 13, 2004, page 6 of 13
PF08134B
Characteristic Curves
GSM mode (824 MHz to 849 MHz)
GSM mode (824 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 -10 -20 -30 -40 -50 -60 100 Pin = 0 dBm 90 Pout Vdd = 3.5 V 80 Vapc = control 70 Tc = 25C 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) 40 30 20 10 0 -10 -20 -30 -40 -50 -60
Output power Pout (dBm) Output power Pout (dBm)
GSM mode (849 MHz) Pout, Eff vs. Vapc 100 90 Pout 80 70 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25C
Efficiency Eff (%)
GSM mode (824 MHz) Eff vs. Pout 60
Efficiency Eff (%)
GSM mode (849 MHz) Eff vs. Pout 60
Efficiency Eff (%)
Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25C 30 20 10 0 0 5 10 15 20 25 30 35 Output power Pout (dBm) 40
Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25C 30 20 10 0 0 5 10 15 20 25 30 35 Output power Pout (dBm) 40
GSM mode (824 MHz) Pout, Eff vs. Pin 36.0 60 35.5 Vdd = 3.5 V Tc = 25C Pout 55 35.0 34.5 50 34.0 Eff 33.5 45 33.0 32.5 32.0 40 Pout : Vapc = 2.2 V 31.5 Eff : Pout = 33.5 dBm 31.0 35 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input power Pin (dBm)
GSM mode (849 MHz) Pout, Eff vs. Pin 36.0 60 35.5 Vdd = 3.5 V Tc = 25C 55 35.0 34.5 Pout 50 34.0 33.5 Eff 33.0 45 32.5 32.0 40 Pout : Vapc = 2.2 V 31.5 Eff : Pout = 33.5 dBm 35 31.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input power Pin (dBm)
Output power Pout (dBm)
Output power Pout (dBm)
Efficiency Eff (%)
Rev.1.01, May 13, 2004, page 7 of 13
Efficiency Eff (%)
Efficiency Eff (%)
PF08134B GSM mode (824 MHz to 849 MHz) (cont.)
GSM mode (824 MHz) Idd vs. Pout 10
Supply current Idd (A) Supply current Idd (A)
GSM mode (849 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25C
Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25C
0.1
0.1
0.01 -50 -40 -30 -20 -10 0 10 20 30 Output power Pout (dBm)
40
0.01 -50 -40 -30 -20 -10 0 10 20 30 Output power Pout (dBm)
40
GSM mode Pout, Eff vs. f
Output power Pout (dBm)
GSM mode Pout vs. Vdd
Output power Pout (dBm)
37 36 35 34 33 32 31 650 700 Pin = 0 dBm Vdd = 3.5 V Tc = 25C Pout : Vapc = 2.2 V Eff : Pout = 33.5 dBm 750 800 850 900 Frequency f (MHz) Eff Pout
55 50 45 40 35 30 950
Efficiency Eff (%)
38 37 36 849 MHz 35 34 33 3.1 Vdd = 3.5 V Tc = 25C Pout : Vapc = 2.2 V Eff : Pout = 33.5 dBm 3.3 3.5 3.7 3.9 4.1 4.3 Supply voltage Vdd (V) 4.5 824 MHz
Output power Pout (dBm)
Output power Pout (dBm)
GSM mode (824 MHz) Pout vs. Pin (Temperature variation) 36 Vapc = 2.2 V Vdd = 3.5 V, Tc = 25C 35 34 33 32 31 -8 Vdd = 3.5 V, Tc = 85C Vdd = 3.1 V, Tc = 85C
GSM mode (849 MHz) Pout vs. Pin (Temperature variation) 36 Vapc = 2.2 V 35 34 33 Vdd = 3.1 V, Tc = 85C 32 31 -8 Vdd = 3.5 V, Tc = 25C Vdd = 3.5 V, Tc = 85C
-6
-4 -2 0 2 4 Input power Pin (dBm)
6
8
-6
-4 -2 0 2 4 Input power Pin (dBm)
6
8
Rev.1.01, May 13, 2004, page 8 of 13
PF08134B DCS mode (1710 MHz to 1785 MHz)
DCS mode (1710 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 -10 -20 -30 -40 -50 -60 100 Pin = 0 dBm 90 Pout Vdd = 3.5 V 80 Vapc = control 70 Tc = 25C 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) 40 30 20 10 0 -10 -20 -30 -40 -50 -60
Output power Pout (dBm) Output power Pout (dBm)
DCS mode (1785 MHz) Pout, Eff vs. Vapc 100 90 Pout 80 70 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25C
Efficiency Eff (%)
DCS mode (1710 MHz) Eff vs. Pout 60
Efficiency Eff (%)
DCS mode (1785 MHz) Eff vs. Pout 60
Efficiency Eff (%)
Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25C 30 20 10 0 0 5 10 15 20 25 30 Output power Pout (dBm) 35
Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25C 30 20 10 0 0 5 10 15 20 25 30 Output power Pout (dBm) 35
DCS mode (1710 MHz) Pout, Eff vs. Pin
Output power Pout (dBm)
DCS mode (1785 MHz) Pout, Eff vs. Pin
Output power Pout (dBm)
34.5 34.0 33.5 33.0 32.5
Efficiency Eff (%)
55 50 Eff 45 40 35 10
34.0 33.5 33.0 32.5
Pout Eff
55 50 45
Pout : Vapc = 2.2 V Eff : Pout = 32.5 dBm 0 2 4 6 8 Input power Pin (dBm)
Pout : Vapc = 2.2 V Eff : Pout = 32.5 dBm 8
40 35 10
32.0 -10 -8 -6 -4 -2
32.0 -10 -8 -6 -4 -2 0 2 4 6 Input power Pin (dBm)
Rev.1.01, May 13, 2004, page 9 of 13
Efficiency Eff (%)
Vdd = 3.5 V Tc = 25C
Pout
60
34.5
Vdd = 3.5 V Tc = 25C
60
Efficiency Eff (%)
PF08134B DCS mode (1710 MHz to 1785 MHz) (cont.)
DCS mode (1710 MHz) Idd vs. Pout 10
Supply current Idd (A) Supply current Idd (A)
DCS mode (1785 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25C
Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25C
0.1
0.1
0.01 -50 -40 -30 -20 -10 0 10 20 30 Output power Pout (dBm)
40
0.01 -50 -40 -30 -20 -10 0 10 20 30 Output power Pout (dBm)
40
DCS, PCS mode Pout, Eff vs. f
Output power Pout (dBm)
DCS mode Pout vs. Vdd
Output power Pout (dBm)
35 34 33 32 31 Eff Pout
60 55 50 45 Vdd = 3.5 V Tc = 25C Pout : Vapc = 2.2 V Eff : Pout = 32.5 dBm 40
Efficiency Eff (%)
37 36 35 34 33 32 3.1 1710 MHz 1785 MHz Pin = 0 dBm Vapc = 2.2 V Tc = 25C 4.5
30 35 1600 1650 1700 1750 1800 1850 1900 1950 2000 Frequency f (MHz)
3.3
3.5 3.7 3.9 4.1 4.3 Supply voltage Vdd (V)
Output power Pout (dBm)
Output power Pout (dBm)
DCS mode (1710 MHz) Pout vs. Pin (Temperature variation) 36 Vapc = 2.2 V 35 Vdd = 3.5 V, Tc = 25C 34 Vdd = 3.5 V, Tc = 85C 33 Vdd = 3.1 V, Tc = 85C 32 31 -8
DCS mode (1785 MHz) Pout vs. Pin (Temperature variation) 36 Vapc = 2.2 V 35 34 33 32 31 -8 Vdd = 3.5 V, Tc = 25C Vdd = 3.5 V, Tc = 85C Vdd = 3.1 V, Tc = 85C -6 -4 -2 0 2 4 Input power Pin (dBm) 6 8
-6
-4 -2 0 2 4 Input power Pin (dBm)
6
8
Rev.1.01, May 13, 2004, page 10 of 13
PF08134B PCS mode (1850 MHz to 1910 MHz)
PCS mode (1850 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 -10 -20 -30 -40 -50 -60 100 Pin = 0 dBm 90 Vdd = 3.5 V Pout 80 Vapc = control 70 Tc = 25C 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) 40 30 20 10 0 -10 -20 -30 -40 -50 -60
Output power Pout (dBm) Output power Pout (dBm)
PCS mode (1910 MHz) Pout, Eff vs. Vapc 100 90 Pout 80 70 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25C
Efficiency Eff (%)
PCS mode (1850 MHz) Eff vs. Pout 60
Efficiency Eff (%)
PCS mode (1910 MHz) Eff vs. Pout 60
Efficiency Eff (%)
Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25C 30 20 10 0 0 5 10 15 20 25 30 Output power Pout (dBm) 35
Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25C 30 20 10 0 0 5 10 15 20 25 30 Output power Pout (dBm) 35
PCS mode (1850 MHz) Pout, Eff vs. Pin
Output power Pout (dBm)
PCS mode (1910 MHz) Pout, Eff vs. Pin
Output power Pout (dBm)
37 36 35 34 33 32 -8
Efficiency Eff (%)
55 Eff Pout Pout : Vapc = 2.2 V Eff : Pout = 32 dBm 50 45 40 35
36 35 34 33 32 -8
Eff
55 50
Pout Pout : Vapc = 2.2 V Eff : Pout = 32 dBm -6 -4 -2 0 2 4 6 8 Input power Pin (dBm)
45 40 35
-6
-4
-2
0
2
4
6
8
Input power Pin (dBm)
Rev.1.01, May 13, 2004, page 11 of 13
Efficiency Eff (%)
Vdd = 3.5 V Tc = 25C
60
37
Vdd = 3.5 V Tc = 25C
60
Efficiency Eff (%)
PF08134B PCS mode (1850 MHz to 1910 MHz) (cont.)
PCS mode (1850 MHz) Idd vs. Pout 10 PCS mode (1910 MHz) Idd vs. Pout 10
Supply current Idd (A)
0.1
Supply current Idd (A)
40
Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25C
Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25C
0.1
0.01 -50 -40 -30 -20 -10 0 10 20 30 Output power Pout (dBm)
0.01 -50 -40 -30 -20 -10 0 10 20 30 Output power Pout (dBm)
40
DCS, PCS mode Pout, Eff vs. f
PCS mode Pout vs. Vdd
Output power Pout (dBm)
34 33 32
55 50 45
Efficiency Eff (%)
Pout
Output power Pout (dBm)
35
60
37 36 35 34 33 32 31 3.1 3.3 1850 MHz 1910 MHz Pin = 0 dBm Vapc = 2.2 V Tc = 25C 4.5
Eff 31
Vdd = 3.5 V Tc = 25C Pout : Vapc = 2.2 V Eff : Pout = 32 dBm
40
30 35 1600 1650 1700 1750 1800 1850 1900 1950 2000 Frequency f (MHz)
3.5 3.7 3.9 4.1 4.3 Supply voltage Vdd (V)
Output power Pout (dBm)
Output power Pout (dBm)
PCS mode (1850 MHz) Pout vs. Pin (Temperature variation) 35 Vapc = 2.2 V 34 Vdd = 3.5 V, Tc = 25C 33 Vdd = 3.5 V, Tc = 85C 32 31 30 29 -8 -6 -4 -2 0 2 4 Input power Pin (dBm) 6 8 Vdd = 3.1 V, Tc = 85C
PCS mode (1910 MHz) Pout vs. Pin (Temperature variation) 35 Vapc = 2.2 V 34 33 32 31 30 29 -8 -6 -4 -2 0 2 4 Input power Pin (dBm) 6 8 Vdd = 3.5 V, Tc = 25C Vdd = 3.5 V, Tc = 85C Vdd = 3.1 V, Tc = 85C
Rev.1.01, May 13, 2004, page 12 of 13
PF08134B
Package Dimensions
Unit: mm
10.0 0.3 8 7 G 6 5 1.5 max
1
2
G
3
4
8.0 0.3
5 G6 87 34 2G 1
(Upper side)
(1.80)
1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS & Pout PCS 6: Vdd2 7: Vctl 8: Pin DCS & Pin PCS G: GND
(3.20)
(0.80)
(0.80)
(1.20) (2.50) (3.90)
(0.60)
(Bottom side)
Package Code JEDEC JEITA Mass (reference value)
RF-Q-8 -- -- --
Rev.1.01, May 13, 2004, page 13 of 13
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Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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