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PF0031
MOS FET Power Amplifier Module for Mobile Phone
ADE-208-461 (Z) 1st Edition July 1, 1996 Application
PF0031: For NMT900 890 to 925 MHz
Features
* High stability: Load VSWR 20:1 * Low power control current: 400 A * Thin package: 5 mm t
Pin Arrangement
* RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
PF0031
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout
G GND
Z1
C1
FB1
C3
FB2
C2
Z2
Pin
VAPC
VDD
Pout
C1 = C2 = 0.01 F (Ceramic chip capacitor) C3 = 10 F (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 (Microstrip line)
Absolute Maximum Ratings (Tc = 25C)
Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 3 8 20 -30 to +100 -40 to +110 Unit V A V mW C C
2
PF0031
Electrical Characteristics (Tc = 25C)
Item Drain cutoff current Total efficiency Symbol I DS T Min -- 35 -- -- -- -- Typ -- 40 -50 -50 1.5 1.5 Max 500 -- -30 -30 3 -- Unit A % dB dB -- -- Pin = 2 mW, VDD = 12.5 V, Pout = 6 W (at APC controlled), RL = Rg = 50 , Output VSWR = 20:1 All phases, t = 20sec Test Condition VDD = 17 V, VAPC = 0 V, Rg = RL= 50 Pin = 2 mW, VDD = 12.5 V, Pout = 6 W (at APC controlled) RL = Rg = 50
2nd harmonic distortion 2nd H.D. 3rd harmonic distortion 3rd H.D. Input VSWR Output VSWR Stability VSWR (in) VSWR (out) --
No parasitic oscillation --
Test System Diagram
S.G Power Meter L.P.F 3dB ATT
VAPC VDD Spectrum Analyzer Test Fixture Directional Coupler Directional Coupler
RF SW.
Power Meter
3
PF0031
Test Fixture Pattern
Unit: mm
26.5 3.5 2.88 16 4.5 3 2.88 64 28 4
VAPC
VDD 80 3.5
1.5
2.88
4
4 15 100 Grass Epoxy Double sided PCB (t = 1.6 mm, r = 4.8)
Mechanical Characteristics
Item Torque for screw up the heatsink flange Warp size of the heatsink flange: S Conditions M3 Screw Bolts Spec 4 to 6 kg*cm S=0 +0.3/- 0 mm S
4
16.5
4
2.88
PF0031
Note for Use
* * * * * * * * * * * * * * Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm. It should not be existed any dust between module and heatsink. MODULE should be separated from PCB less than 1.5 mm. Soldering temperature and soldering time should be less than 230C, 10 sec. (Soldering position spaced from the root point of the lead frame: 2 mm) Recommendation of thermal joint compounds is TYPE G746. (Manufacturer: Shin-Etsu Chemical, Co., Ltd.) To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc. should be grounded. Torque for screw up the heatsink flange should be 4 to 6 kg * cm with M3 screw bolts. Don't solder the flange directly. It should make the lead frame as straight as possible. The module should be screwed up before lead soldering. It should not be given mechanical and thermal stress to lead and flange of the module. When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics should be evaluated enough. Don't washing the module except lead pins. To get good stability, ground impedance between the module GND flange and PCB GND pattern should be designed as low as possible.
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PF0031
Characteristics Curve
Pout, T vs. VDD (1) 20 f = 890 MHz Pin = 2 mW VAPC = 4 V Tc = 25 C T 12 40 60
16 Output Power Pout (W)
50 Efficiency T (%) Efficiency T (%)
8 Pout 4
30
20
0 0 4 8 12 16 Supply Voltage VDD (V) Pout, T vs. VDD (2) 20 f = 915 MHz Pin = 2 mW VAPC = 4 V Tc = 25C
10 20
60
16 Output Power Pout (W)
50
12 T 8 Pout 4
40
30
20
0 0 4 8 12 16 Supply Voltage VDD (V)
10 20
6
PF0031
VAPC, T, VSWR (in) vs. Frequency 6 10 Pin = 2 mW VDD = 12.5 V Pout = 6 W Tc = 25C T 6 40 60
5 Apc Voltage VAPC (V)
8
50 Efficiency T (%) Efficiency T (%)
V.S.W.R. (in)
4
3
4 VAPC 2 VSWRin
30
2
20
1
0 890
895
900
905
910
10 915
Frequency f (MHz) Pout, T, VSWR (in) vs. Frequency 6 20 Pin = 2 mW VDD = 12.5 V VAPC = 4 V Tc = 25C T 12 40 60
5 Output Power Pout (W)
16
50
V.S.W.R. (in)
4
3
8 Pout 4 VSWRin
30
2
20
1
0 890
895
900
905
910
10 915
Frequency f (MHz)
7
PF0031
Pout, T vs. Pin (1) 20 f = 890 MHz VDD = 12.5 V VAPC = 4 V Tc = 25C T 12 Pout 8 30 40 Efficiency T (%) Efficiency T (%) 60
16 Output Power Pout (W)
50
4
20
0
0
2
4
6
8
10 10
Input Power Pin (mW) Pout, T vs. Pin (2) 20 f = 915 MHz VDD = 12.5 V VAPC = 4 V Tc = 25C T 60
16 Output Power Pout (W)
50
12
40
Pout 8 30
4
20
0
0
2
4
6
8
10 10
Input Power Pin (mW)
8
PF0031
Pout, T vs. VAPC (1) 20 f = 890 MHz Pin = 2 mW VDD = 12.5 V Tc = 25C T 12 40 60
16 Output Power Pout (W)
50 Efficiency T (%) Efficiency T (%)
8
Pout
30
4
20
0
0
2
4 6 Apc Voltage VAPC (V) Pout, T vs. VAPC (2)
8
10 10
20 f = 915 MHz Pin = 2 mW VDD = 12.5 V Tc = 25C
60
16 Output Power Pout (W)
50
12 T 8 Pout 4
40
30
20
0
0
2
4 6 Apc Voltage VAPC (V)
8
10 10
9
PF0031
T vs. TC (1) 70 f = 890 MHz VDD = 12.5 V Pin = 2 mW Pout = 6 W
60
Efficiency T (%)
50
40
30
20 -40
0
40
80
120
Case Temperature TC (C) T vs. TC (2) 70 f = 915 MHz VDD = 12.5 V Pin = 2 mW Pout = 6 W
60
Efficiency T (%)
50
40
30
20 -40
0
40
80
120
Case Temperature TC (C)
10
PF0031
Pout vs. TC (1) f = 890 MHz VDD = 12.5 V Pin = 2 mW VAPC = 7.0 V
20 Output Power Pout (W)
10
0 -40
0
40
80
120
Case Temperature TC (C) Pout vs. TC (2) f = 915 MHz VDD = 12.5 V Pin = 2 mW VAPC = 7.0 V
20 Output Power Pout (W)
10
0 -40
0
40
80
120
Case Temperature TC (C)
11
PF0031
Package Dimensions
Unit: mm
12.7 0.5
11.0 0.3
60.5 0.5 57.5 0.5
R1.6
0.5
0.6 5.0 + 0.3 -
2.3
13.0 1
9.2 1 8.0 1
Hitachi Code JEDEC EIAJ Weight (reference value) RF-B2 -- -- 16 g
12
0.25
22.0 1
3.3
49.8 0.5
51
1
2
3
4
6.35 0.5
PF0031
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Mnchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
Copyright ' Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.
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