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| NZT605 NPN Darlington Transistor January 2007 NZT605 NPN Darlington Transistor * This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. * Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * T Symbol VCEO VCBO VEBO IC TJ, TSTG Collector-Base Voltage Emitter-Base Voltage Collector Current Collector-Emitter Voltage C = 25C unless otherwise noted Parameter Value 110 140 10 Units V V V A C - Continuous 1.5 -55 to +150 Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations Electrical Characteristics * Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE TC = 25C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cut-off Current Conditions IC = 10mA, IB = 0 IC = 100A, IE = 0 IE = 100A, IC = 0 VCB = 120V, IE = 0 VCE = 120V, IE = 0 VEB = 8.0V, IC = 0 VCE = 5.0V, IC = 50mA VCE = 5.0V, IC = 500mA VCE = 5.0V, IC = 1.0A VCE = 5.0V, IC = 1.5A VCE = 5.0V, IC = 2.0A IC = 250mA, IB = 0.25mA IC = 1.0A, IB = 1.0mA IC = 1.0A, IB = 1.0mA IC = 1.0A, VCE = 5.0V IC = 100mA, VCE = 10V, f = 20MHz Min. 110 140 10 Max Units V V V 10 10 100 nA nA nA On Characteristics * DC Current Gain 2000 5000 2000 300 200 100K VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 1 1.5 1.8 1.7 V V V Small Signal characteristics fT Transition Frequency * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% 150 MHz (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com NZT605 Rev. C NZT605 NPN Darlington Transistor Thermal Characteristics Symbol PD RJA Ta = 25C unless otherwise noted Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max. 1,000 8.0 125 Units mW mW/C C/W * Device mounted on FR-4PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6cm2 2 NZT605 Rev. C www.fairchildsemi.com NZT605 NPN Darlington Transistor Mechanical Dimensions SOT-223 0.08MAX 3.00 0.10 MAX1.80 1.75 0.20 3.50 0.20 (0.60) 0.65 0.20 +0.04 0.06 -0.02 2.30 TYP (0.95) 4.60 0.25 0.70 0.10 (0.95) +0.10 0.25 -0.05 (0.60) 0~ 10 1.60 0.20 (0.46) (0.89) 6.50 0.20 7.00 0.30 Dimensions in Millimeters 3 NZT605 Rev. C www.fairchildsemi.com NZT605 NPN Darlington Transistor NZT605 NPN Darlington Transistor FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 4 NZT605 Rev. C www.fairchildsemi.com |
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