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| NTE492 MOSFET N-Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Note 2. Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Zero-Gate-Voltage Drain Current Drain-Source Breakdown Voltage Gate Reverse Current ON Characteristics (Note 2) Gate Threshold Voltage Static Drain-Source ON Resistance Small-Signal Characteristics Input Capacitance Reverse Transfer Capacitance Output Capacitance Forward Transconductance Ciss Crss Coss gfs VDS = 25V, VGS = 0, f = 1MHz VDS = 25V, VGS = 0, f = 1MHz VDS = 25V, VGS = 0, f = 1MHz VDS = 25V, ID = 250mA - - - 60 6.0 30 - - - - pF pF pF mmhos VGS(Th) rDS(on) ID = 1mA, VDS = VGS VGS = 10V, ID = 100mA VGS = 10V, ID = 250mA 1.0 - - - 4.5 4.8 3.0 6.0 6.4 V IDSS IGSS VDS = 130V, VGS = 0 VGS = 15V, VDS = 0 - 200 - - - 30 - nA V nA V(BR)DSX VGS = 0, ID = 100A Symbol Test Conditions Min Typ Max Unit 0.01 10.0 200 400 Note 2. Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Switching Characteristics Turn-On Time Turn-Off Time ton toff - - 6.0 15.0 12 15 ns ns Symbol Test Conditions Min Typ Max Unit .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (0.45) Dia Max DGS .100 (2.54) .050 (1.27) .156 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
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