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| NTE349 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V VHF large-signal amplifier applications required in military and industrial equipment to 240MHz. Features: D Specified 13.6V, 175MHz Characteristics: Output Power = 10W Minimum Gain = 5.2dB Efficiency = 50% Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0171mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz - 35 70 pF hFE IC = 250mA, VCE = 5V 5 - - V(BR)CEO IC = 200mA, IB = 0 V(BR)EBO IE = 2.5mA, IC = 0 ICBO VCB = 15V, IE = 0 18 4 - - - - - - 1.0 V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Functional Tests (VCE = 13.6V unless otherwise specified) Common-Emitter Amplifier Power Gain Power Input Collector Efficiency GPE Pin Pout = 10W, f = 175MHz POUT = 10W, f = 175MHz Pout = 10W, f = 175MHz 5.2 - 50 - - - - 3 - dB W % 1.040 (26.4) Max .520 (13.2) C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8-32-NC-3A .750 (19.05) Wrench Flat |
Price & Availability of NTE349
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