 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large-signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.5dB Efficiency: 70% D Available in Two Different Package Styles: T72 Stud Mount: NTE320 W52K Flange Mount: NTE320F Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (TC = +25C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 460mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Stud Torque (NTE320 Only, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5in. lb. Note 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. Note 2. For repeated assembly, use 5in. lb. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 V(BR)CES IC = 20mA, VBE = 0 Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 10mA, IC = 0 ICES ICBO ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Function Test Common-Emitter Amplifier Power Gain Collector Efficiency GPE PO = 40W, VCC = 12.5V, f = 175MHz PO = 40W, VCC = 12.5V, f = 175MHz 4.5 70 - - - - dB % Cob VCB = 15V, IE = 0, f = 0.1MHz - 170 200 pF hFE IC = 1A, VCE = 5V 5 - - VCE = 15V, VBE = 0, TC = +55C VCB = 15V, IE = 0 18 36 4 - - - - - - - - - - 10 2.5 V V V mA mA Symbol Test Conditions Min Typ Max Unit 175MHz Test Circuit +12.5Vdc + 100F 0.1F 1000pF SHIELD C1 RF Input L1 DUT L2 C4 RF Output RFC C2 RFC 100pF 100pF C3 C1, C2, C3, C4 L1 5.0 - 80pF ARCO 462 Straight Wire, #14 AWG, 1-3/8" Long L2 RFC 1 Turn, #14 AWG, 3/8" ID, Length Plus Leads = 1.000 VK200-20/4B, FERROXCUBE NTE320 (T72, Stud Mount) 1.060 (26.92) Max .530 (13.46) C .225 (5.72) E E B .075 (1.9) .375 (9.52) Dia .250 (6.35) .720 (18.28) 8-32-NC-3A Wrench Flat NTE320F (W52K, Flange Mount) .725 (18.42) .122 (3.1) Dia (2 Holes) C E .250 (6.35) B .225 (5.72) E .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14) |
Price & Availability of NTE320F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |