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| NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Characteristics Turn-On Time Storage Time Fall Time ton tstg tf VCC = 30V, IB1 = -IB2 = 6mA, Duty Cycle 1% - - - 0.2 1.5 0.6 - - - s s s Symbol ICBO IEBO hFE (1) hFE (2) VBE(sat) Test Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 3A IC = 3A, IB = 6mA Min - - 80 2000 1000 - - Typ - - - - - - - Max 20 2.5 - - - 1.5 2.0 V V Unit A mA V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 VCE(sat) IC = 3A, IB = 6mA C B ]4.5k ]300 E B ]4.5k ]300 C E .343 (8.72) .059 (1.5) .148 (3.72) .256 (6.5) .043 (1.1) .406 (10.3) .043 (1.1) .413 (10.5) .032 (0.82) .100 (2.54) .020 (.508) B C E |
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