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| NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high-power, high-gain applications in high-reliability industrial equipment. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +110C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5C/W Elwectrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CES Floating Potential Collector Cutoff Current VEBF ICBO IC = 1A, IB = 0, Note 1 IC = 300mA, VBE = 0, Note 1 VCB = 75V, IE = 0 VCB = 2V, IE = 0 VCB = 74V, IE = 0 VCB = 75V, IE = 0, TC = +71C Emitter Cutoff Current IEBO VBE = 25V, IC = 0 VBE = 30V, IC = 0 VBE = 40V, IC = 0 VBE = 40V, IC = 0, TC = +71C 60 75 - - - - - - - - - - - 0.8 0.9 4.0 0.2 0.2 0.2 2.7 - - 1.0 0.2 4.0 15 4.0 4.0 4.0 15 V V V mA mA mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain hFE VCB = 2V, IC = 5A VCB = 2V, IC = 15A VCB = 2V, IC = 25A Collector-Emitter Saturation Voltage VCE(sat) VBE(on) IC = 5A, IB = 500mA IC = 25A, IB = 2A Base-Emitter ON Voltage IC = 5A, IB = 500mA IC = 25A, IB = 2A Dynamic Characteristics Common-Emitter Cutoff Frequency fe VCE = 6V, IC = 5A 2.0 2.7 - kHz 50 25 15 - - - - 75 47 38 0.06 0.2 0.65 1.0 100 - - 0.1 0.3 1.0 2.0 V V V V Symbol Test Conditions Min Typ Max Unit 1.250 (31.75 Dia Max 1.005 (25.55) Dia Max .500 (12.7) Max .520 (13.2) Max .710 (18.03) Max .312 (7.93) 10-32 UNF-2A .190 (4.83) Emitter .345 (8.76) Base Collector/Case |
Price & Availability of NTE213
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