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| NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO(sus) IC = 200mA, IB = 0, Note 1 V(BR)EBO ICEO ICEX IE = 0.25mA, IC = 0 VCE = 30V, IB = 0 VCE = 30V, VBE(off) = 1.5V, TC = +200C VCE = 65V, VBE(off) = 1.5V ICBO Emitter Cutoff Current ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance fT Cob VCE = 28V, IC = 150mA, f = 100MHz VCB = 30V, IE = 0, f = 100kHz - - 400 16 - 20 MHz pF hFE VCE(sat) VBE(sat) VCE = 5V, IC = 1A IC = 500mA, IB = 100mA IC = 1A, IB = 5A 5 - - - - - - 1.0 1.5 V V IEBO VCB = 65V, IE = 0 VBE = 4V, IC = 0 40 4 - - - - - - - - - - - - - - 0.25 10 5 1 0.25 V V mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through 25mH inductor. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Functional Tests Power Input Common-Emitter Amplifier Power Gain Collector Efficiency Pin Gpe VCE = 28V, Pout = 2.5W, f = 175MHz - 10 50 - - - 0.25 - - W dB % Symbol Test Conditions Min Typ Max Unit Collector .200 (5.08) Dia Emitter .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) Max .320 (8.22) Max .113 (2.88) 10-32 NF-2A .078 (1.97) Max .455 (11.58) Max |
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