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NSS30070MR6T1G 30 V, 0.7 A, Low VCE(sat) PNP Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
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30 VOLTS 0.7 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 320 mW
COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3
* This is a Pb-Free Device
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Total Power Dissipation @ TC = 85C Thermal Resistance - Junction-to-Ambient (Note 1) Total Power Dissipation @ TC = 25C Total Power Dissipation @ TC = 85C Thermal Resistance - Junction-to-Ambient (Note 2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 -55 to +150 Unit V V V mA mA mW mW C/W mW mW C/W C
4 65 12 3
SC-74 CASE 318F STYLE 2
DEVICE MARKING
VS2M
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR-4 or G-10 PCB, Operating to Steady State. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz Cu 0.06 thick single sided), Operating to Steady State.
VS2 = Specific Device Code M = Date Code
ORDERING INFORMATION
Device NSS30070MR6T1G Package Shipping
SC-74 3000/Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
June, 2005 - Rev. 0
Publication Order Number: NSS30070MR6/D
NSS30070MR6T1G
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector -Emitter Saturation Voltage Collector -Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 0.5 0.4 0.3 0.2 0.1 0 IC = 1.0 mA 0.000001 0.00001 0.1 A (VCE = 3.0 V, IC = 100 mA) (IC = 500 mA, IB = 50 mA) (IC = 700 mA, IB = 70 mA) (IC = 700 mA, IB = 70 mA) (IC = 700 mA, VCE = 1.0 V) 0.2 0.5 A 0.15 hFE VCE(sat) VCE(sat) VBE(sat) VBE(on) 150 - - - - - - - - - - 0.25 0.4 1.1 1.0 V V V V V (IC = 100 mA) (IC = 10 mA) (IE = 100 mA) (VCB = 25 V, IE = 0 A) (VCB = 25 V, IE = 0 A, TA = 125C) (VEB = 5.0 V, IC = 0 A) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 40 30 5.0 - - - - - - - - - - - - 1.0 10 10 V V V mA mA
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
0.7 A 0.5 A 10 mA 0.0001
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
0.1 0.1 A
0.05 IC = 1.0 mA 0 0.000001 0.00001
10 mA
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
IB, BASE CURRENT (A)
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
1000 VCE = 3.0 V h FE , DC CURRENT GAIN 1.0
Figure 2. Collector Saturation Region
VBE(sat)
150C 25C -40C
VOLTAGE (V)
0.1
VCE(sat) 100 0.01 0.1 IC, COLLECTOR CURRENT (A) 1.0 0.01 0.001 0.01 0.1
IC/IB = 10 1.0
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. "ON" Voltages
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2
NSS30070MR6T1G
1.0 VBE(sat) VCE(sat) , VOLTAGE (V) 0.12 0.16 IC/IB = 10 0C T = 85C
25C
VOLTAGE (V)
0.1 VCE(sat)
0.08
0.04
0.01
IC/IB = 100 0.001 0.01 0.1 1.0
0
0.01
0.1 IC, COLLECTOR CURRENT (A)
1.0
IC, COLLECTOR CURRENT (A)
Figure 5. "ON" Voltages
Figure 6. Collector-Emitter Saturation Voltage
0.6 IC/IB = 100 0.5 VCE(sat) , VOLTAGE (V) 0.4 0.3 0.2 0.1 0 0C T = 85C 25C VBE(on) , VOLTAGE (V)
1.0 -40C 0.75 25C
0.5
150C
0.25 VCE = 1.0 V
0.1 IC, COLLECTOR CURRENT (A)
1.0
0
0.0001
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 7. Collector-Emitter Saturation Voltage
Figure 8. VBE(on) Voltage
TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 TIME (sec) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1.0 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) RqJA TJ(pk) - TA = P(pk) ZqJA(t)
0.01
10
100
Figure 9. Thermal Response Curve
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3
NSS30070MR6T1G
PACKAGE DIMENSIONS
SC-74 CASE 318F-05 ISSUE K
A L
6 5 1 2 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F-01, -02, -03 OBSOLETE. NEW STANDARD 318F-04. DIM A B C D G H J K L M S INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0_ 10 _ 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0_ 10 _ 2.50 3.00
S
3
B
D G M 0.05 (0.002) H C K J
SOLDERING FOOTPRINT*
2.4 0.094
STYLE 2: PIN 1. 2. 3. 4. 5. 6.
NO CONNECTION COLLECTOR EMITTER NO CONNECTION COLLECTOR BASE
1.9 0.074 0.7 0.028
0.95 0.037 0.95 0.037
1.0 0.039 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NSS30070MR6/D

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