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| Product Description Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA589 typically provides +39 dBm output IP3, 20 dB of gain, and +19 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25C 24 GAIN NGA-589 DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Contact Factory See Application Note AN-059 for Alternates Obsolete Product Features High Gain : 19.2 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology Operates From Single Supply Low Thermal Resistance Package 0 -10 IRL Return Loss (dB) 18 Gain (dB) 12 ORL -20 -30 -40 0 1 2 3 4 Frequency (GHz) 5 6 Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Units dB dBm dBm M Hz dB dB dB V mA C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.5 72 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 18.0 Ty p. 20.0 19.2 18.9 19.0 18.8 39.0 34.0 5500 15.5 18.0 3.7 4.9 80 111 5.3 88 Max. 22.0 6 0 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point Bandw idth Determined by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 8 V RBIAS = 39 Ohms ID = 80 mA Typ. TL = 25C Test Conditions: OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100376 Rev D Preliminary Obsolete NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Sy mbol Parameter Unit 100 500 850 1950 2400 3500 G OIP3 P1dB IRL ORL S12 NF Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure dB dBm dBm dB dB dB dB 20.5 37.7 18.3 27.0 20.9 22.6 3.8 20.3 38.8 19.0 24.5 21.4 22.7 3.6 20.0 39.0 19.0 21.8 22.1 22.8 3.5 19.2 34.0 18.8 15.5 18.0 23.2 3.7 19.0 31.4 17.6 13.2 15.9 23.4 3.6 18.4 27.7 15.4 11.7 19.3 24.0 3.8 VS = 8 V Test Conditions: RBIAS = 39 Ohms ID = 80 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Absolute Maximum Ratings Noise Figure vs. Frequency 7 Noise Figure (dB) 6 5 4 3 2 Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Absolute Limit 120 mA VD= 4.9 V, ID= 80 mA 6V +15 dBm +150C -40C to +85C +150C TL = 25C Operating Temp. Range (TL) Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency 45 40 OIP3(dBm) 35 30 25 20 15 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 VD= 4.9 V, ID= 80 mA P1dB vs. Frequency 22 VD= 4.9 V, ID= 80 mA +25C -40C +85C TL 20 P1dB (dBm) 18 16 14 12 10 0 0.5 1 TL +25C -40C +85C 1.5 2 2.5 Frequency (GHz) 3 3.5 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-100376 Rev D Preliminary Obsolete NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier |S | vs. Frequency 24 VD= 4.9 V, ID= 80 mA 21 |S | vs. Frequency 0 -10 S11 (dB) -20 -30 VD= 4.9 V, ID= 80 mA 11 18 S21 (dB) 12 6 TL 0 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C TL -40 6 +25C -40C +85C 0 1 2 3 4 Frequency (GHz) 5 6 |S | vs. Frequency -10 VD= 4.9 V, ID= 80 mA 12 |S | vs. Frequency +25C -40C +85C 0 -10 S22 (dB) -20 -30 VD= 4.9 V, ID= 80 mA 22 TL -15 S12 (dB) -20 -25 TL -30 0 1 2 3 4 Frequency (GHz) 5 6 -40 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C 6 VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 39 Ohms * 95 90 +25C -40C VD vs. Temperature for Constant ID = 80 mA 5.50 5.35 80 75 70 65 +85C VD (Volts) ID (mA) 85 5.20 5.05 4.90 4.75 4.60 4.6 4.8 4.9 VD (Volts) 5.1 5.2 -40 -15 10 35 Temperature (C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100376 Rev D Preliminary Obsolete NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier Basic Application Circuit RBIAS 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 VS 1 uF CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 4 NGA-589 3 CB RF out Recommended Bias Resistor Values for ID=80mA Supply Voltage(VS) RBIAS 7.5 V 33 8V 39 10 V 62 12 V 91 2 VS RBIAS N5 Note: RBIAS provides DC bias stability over temperature. 1 uF 1000 pF Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. LC CD CB CB Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Part Identification Marking The part will be marked with an N5 designator on the top surface of the package. 4 1 2, 4 GND N5 1 2 3 2 1 3 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Part Number Ordering Information Part Number NGA-589 Reel Size 7" Devices/Reel 1000 Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100376 Rev D Preliminary Obsolete NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances. Nominal Package Dimensions Bottom View Side View 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-100376 Rev D |
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