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NEC's NPN SILICON TRANSISTOR NE687M13 FEATURES * NEW MINIATURE M13 PACKAGE: - Small transistor outline - 1.0 X 0.5 X 0.5 mm - Low profile / 0.50 mm package height - Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.70.05 0.5+0.1 n0.05 0.2+0.1 n0.05 0.15+0.1 n0.05 (Bottom View) 0.3 * * 0.35 1.0+0.1 n0.05 0.7 LOW NOISE FIGURE: NF = 1.4 dB at 2 GHz 2 3 W2 0.35 1 0.15+0.1 n0.05 DESCRIPTION NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. 0.1 0.1 0.2 0.2 0.125+0.1 n0.05 0.50.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE ICBO IEBO CRE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz, Zs = Zopt VCE = 1 V, IC = 3 mA, f = 2 GHz, Zs = Zopt Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Forward Current Gain at VCE = 2 V, IC = 20 mA, Note 2 Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz, Note 3 NE687M13 2SC5618 M13 UNITS GHz GHz dB dB dB dB A A pF 0.4 8.5 6.0 70 MIN 9.0 7.0 TYP 14.0 12.0 1.4 1.5 10.0 9.0 130 0.1 0.1 0.8 2.0 2.0 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal of the bridge. California Eastern Laboratories NE687M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 5.0 3.0 2.0 30 90 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE687M13-A NE687M13-T3-A QUANTITY Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation, Ptot (mW) Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) 250 Reverse Transfer Capacitance, Cre (pF) 300 0.6 f = 1 MHz 0.5 200 0.4 150 0.3 100 90 0.2 50 0.1 0 25 50 75 100 125 150 0 1 2 3 4 5 Ambient Temperature, TA (C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 2 V 35 30 25 20 15 10 5 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IB : 50 A step 300 A 500 A 400 A Collector Current, IC (mA) 1 Collector Current, IC (mA) 10 0.1 200 A 0.01 100 A 0.001 IB = 50 A 1 2 3 4 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 Base to Emmiter Voltage, VBE (V) Collector to Emmiter Voltage, VCE (V) NE687M13 TYPICAL PERFORMANCE CURVES (TA = 25C) DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 2 V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 16 Gain Bandwidth Product, fT (GHz) 14 12 10 8 6 4 2 0 VCE = 2 V f = 2 GHz DC Current Gain, HFE 100 10 0.1 1 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 35 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) VCE = 1 V IC = 10 mA VCE = 2 V IC = 10 mA 30 25 20 15 10 |S21e| 5 0 0.1 2 30 25 20 15 10 5 0 0.1 MSG MAG MSG MAG |S21e| 2 1 10 1 10 Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) MSG MAG VCE = 2 V f = 2 GHz 15 MSG MAG 10 15 |S21e| 2 10 |S21e| 2 5 VCE = 2 V f = 1 GHz 0 1 10 100 5 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) NE687M13 TYPICAL PERFORMANCE CURVES (TA = 25C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 1 GHz 4 20 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 2 V f = 1 GHz Ga 16 20 Associated Gain, Ga (dB) Ga 16 4 3 12 3 12 2 NF 1 8 2 NF 1 8 4 4 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 1.5 GHz 20 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 VCE = 2 V f = 1.5 GHz Associated Gain, Ga (dB) 4 16 Ga Ga 3 12 3 12 2 NF 1 8 2 NF 1 8 4 4 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 2 GHz 20 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 VCE = 2 V f = 2 GHz Noise Figure, NF (dB) Noise Figure, NF (dB) 4 16 Associated Gain, Ga (dB) 4 16 3 Ga 2 NF 1 12 3 Ga 12 8 2 NF 1 8 4 4 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) Associated Gain, Ga (dB) Associated Gain, Ga (dB) 4 16 Noise Figure, NF (dB) Noise Figure, NF (dB) Associated Gain, Ga (dB) Noise Figure, NF (dB) Noise Figure, NF (dB) NE687M13 TYPICAL SCATTERING PARAMETERS j50 j25 j100 +90 +135 +45 j10 10 S11 25 50 100 S22 S21 +180 0 S12 5 10 15 20 25 +0 -j10 -135 -j25 -j50 -j100 -45 Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 10 mA -90 NE687M13 VCE = 1 V, IC = 10 mA Frequency GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.71 0.64 0.57 0.53 0.49 0.45 0.44 0.44 0.43 0.43 0.42 0.42 0.42 0.42 0.41 0.40 0.40 0.39 0.40 0.39 0.38 0.36 0.34 S11 ANG -28.83 -56.70 -77.87 -94.58 -107.39 -120.85 -129.42 -135.99 -141.83 -146.64 -153.87 -160.59 -165.22 -169.18 -172.49 179.29 171.08 161.33 152.78 146.02 141.59 138.25 134.43 MAG 21.86 19.01 16.05 13.57 11.62 9.91 8.73 7.80 7.02 6.38 5.40 4.69 4.14 3.71 3.37 2.76 2.35 2.05 1.83 1.66 1.53 1.44 1.36 S21 ANG 158.87 141.86 129.44 120.29 113.50 108.06 103.77 100.31 97.30 94.61 90.05 86.18 82.82 79.73 76.86 70.23 64.05 58.49 53.56 49.23 45.35 41.63 37.72 MAG 0.02 0.04 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.16 0.19 0.21 0.24 0.26 0.29 0.31 0.34 S12 ANG 76.89 64.05 57.48 54.28 52.33 51.39 51.70 52.15 52.52 53.11 54.26 55.29 56.05 56.51 56.83 56.91 55.87 54.71 53.37 52.04 50.81 49.38 47.54 MAG 0.86 0.75 0.63 0.54 0.47 0.37 0.33 0.30 0.28 0.26 0.23 0.21 0.19 0.18 0.17 0.16 0.17 0.18 0.20 0.22 0.23 0.23 0.23 S22 ANG -22.59 -40.78 -54.59 -64.96 -72.99 -78.86 -85.54 -90.17 -94.31 -99.34 -106.29 -113.29 -118.74 -123.68 -128.17 -136.91 -143.47 -147.06 -147.25 -144.73 -140.61 -135.48 -133.06 K MAG1 (dB) 0.19 0.28 0.37 0.46 0.54 0.68 0.74 0.79 0.83 0.88 0.94 0.99 1.03 1.06 1.08 1.12 1.14 1.16 1.16 1.16 1.15 1.14 1.13 29.94 27.02 25.16 23.79 22.68 21.71 20.83 20.04 19.34 18.67 17.49 16.45 14.43 13.15 12.13 10.14 8.61 7.38 6.41 5.60 4.94 4.40 3.90 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE687M13 TYPICAL SCATTERING PARAMETERS j50 j25 j100 +90 +135 +45 j10 S11 0 10 25 50 100 S22 -j10 S12 +180 S21 5 10 15 +0 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 2 V, IC = 5 mA -135 -90 -45 NE687M13 VCE = 2 V, IC = 5 mA Frequency GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.86 0.81 0.76 0.70 0.65 0.58 0.54 0.52 0.49 0.48 0.45 0.43 0.41 0.40 0.39 0.37 0.36 0.35 0.34 0.34 0.34 0.32 0.30 S11 ANG -14.28 -31.85 -46.05 -59.23 -70.68 -82.92 -91.97 -99.97 -107.10 -113.24 -123.52 -132.69 -139.56 -145.30 -150.12 -161.26 -171.52 176.69 166.32 158.42 153.42 150.03 146.33 MAG 13.53 12.83 11.91 10.91 9.95 8.87 8.07 7.39 6.76 6.24 5.38 4.72 4.20 3.78 3.45 2.84 2.42 2.12 1.88 1.70 1.56 1.46 1.38 S21 ANG 167.49 155.13 144.78 135.97 128.54 121.33 116.01 111.61 107.73 104.20 98.29 93.40 89.17 85.45 82.00 74.35 67.39 61.12 55.53 50.63 46.37 42.49 38.57 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.08 0.09 0.09 0.10 0.11 0.11 0.12 0.13 0.14 0.16 0.18 0.20 0.22 0.23 0.25 0.27 0.30 S12 ANG 80.25 71.73 65.56 60.40 56.24 52.47 50.58 49.44 48.55 47.85 47.62 47.64 48.14 48.60 49.16 50.11 50.31 50.27 49.84 49.50 49.25 48.86 48.07 MAG 0.94 0.89 0.82 0.75 0.68 0.58 0.53 0.48 0.44 0.41 0.36 0.32 0.29 0.27 0.25 0.22 0.21 0.22 0.23 0.26 0.28 0.30 0.31 S22 ANG -11.88 -22.74 -32.21 -39.96 -46.33 -49.51 -54.17 -57.43 -59.80 -63.07 -66.56 -70.62 -73.13 -75.54 -77.78 -83.87 -91.33 -98.64 -104.18 -106.91 -106.70 -104.89 -104.37 K MAG1 (dB) 0.14 0.17 0.22 0.28 0.34 0.47 0.52 0.57 0.62 0.66 0.75 0.82 0.88 0.94 0.98 1.07 1.12 1.15 1.17 1.18 1.17 1.16 1.15 28.47 25.34 23.61 22.37 21.38 20.54 19.81 19.16 18.56 18.02 17.05 16.19 15.41 14.70 14.05 11.05 9.30 7.96 6.92 6.08 5.40 4.85 4.35 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE687M13 TYPICAL SCATTERING PARAMETERS j50 j25 j100 +135 +45 +90 j10 S11 0 10 25 50 100 S22 -j10 -135 -45 Coordinates in Ohms Frequency in GHz VCE = 2 V, IC = 20 mA +180 S21 S12 10 20 30 40 +0 -j25 -j50 -j100 -90 NE687M13 VCE = 2 V, IC = 20 mA Frequency GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.57 0.50 0.45 0.42 0.40 0.37 0.37 0.37 0.37 0.36 0.37 0.37 0.37 0.37 0.36 0.36 0.35 0.35 0.36 0.36 0.35 0.33 0.31 S11 ANG -36.15 -67.88 -90.13 -106.56 -118.50 -131.65 -139.21 -144.73 -149.66 -153.80 -159.66 -165.38 -169.31 -172.61 -175.37 177.29 169.69 160.03 151.53 144.75 140.37 137.20 133.76 MAG 31.49 25.71 20.68 16.96 14.25 12.07 10.55 9.37 8.41 7.62 6.43 5.56 4.90 4.39 3.98 3.24 2.75 2.39 2.12 1.92 1.76 1.65 1.55 S21 ANG 154.52 135.92 123.67 115.24 109.26 104.60 100.88 97.86 95.24 92.90 88.88 85.48 82.45 79.67 77.07 70.97 65.26 60.01 55.28 51.05 47.24 43.56 39.78 MAG 0.01 0.03 0.03 0.04 0.05 0.05 0.06 0.06 0.07 0.07 0.08 0.09 0.10 0.11 0.13 0.15 0.18 0.21 0.23 0.25 0.28 0.30 0.33 S12 ANG 71.95 66.14 60.45 59.44 59.55 60.02 60.94 61.83 62.31 62.97 63.94 64.61 64.72 64.87 64.81 63.80 62.10 60.09 58.20 56.51 54.88 53.20 51.20 MAG 0.81 0.67 0.54 0.46 0.39 0.30 0.26 0.24 0.21 0.20 0.17 0.15 0.14 0.13 0.12 0.11 0.12 0.14 0.16 0.18 0.20 0.21 0.21 S22 ANG -25.05 -43.58 -56.22 -64.85 -71.22 -75.54 -81.03 -84.22 -87.05 -91.25 -96.57 -102.15 -106.18 -109.91 -113.45 -121.12 -128.22 -133.08 -134.34 -132.06 -127.09 -120.86 -117.44 K 0.34 0.42 0.54 0.64 0.71 0.84 0.89 0.92 0.95 0.98 1.02 1.05 1.07 1.08 1.09 1.11 1.12 1.12 1.12 1.12 1.11 1.10 1.09 MAG1 (dB) 33.26 29.76 27.77 26.19 24.88 23.77 22.75 21.84 21.02 20.26 18.15 16.47 15.17 14.10 13.16 11.27 9.76 8.53 7.54 6.71 6.03 5.48 4.95 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/13/2002 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability. |
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