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 NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N01M083WL1A
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
128Kx8 bit Overview
The N01M083WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp's N01M0818L2A, which has further reliability processing for life-support (Class 3) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01M083WL1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs
Features
* Single Wide Power Supply Range 2.3 to 3.6 Volts * Very low standby current 2.0A at 3.0V (Typical) * Very low operating current 2.0mA at 3.0V and 1s (Typical) * Very low Page Mode operating current 0.8mA at 3.0V and 1s (Typical) * Simple memory control Dual Chip Enables (CE1and CE2) Output Enable (OE) for memory expansion * Low voltage data retention Vcc = 1.8V * Very fast output enable access time 30ns OE access time * Automatic power down to standby mode * Special Processing to reduce Soft Error Rate (SER)
Product Family
Part Number N01M083WL1AN Package Type 32 - STSOP I Operating Temperature Power Supply (Vcc) Speed Standby Current (ISB), Max 20 A Operating Current (Icc), Max 3 mA @ 1MHz
70ns @ 2.7V -40oC to +85oC 2.3-3.6 Volts 100ns @ 2.3V N01M083WL1AD Known Good Die
Pin Configuration
A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3
Pin Descriptions
Pin Name A0-A16 WE CE1, CE2 OE I/O0-I/O7 VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Power Ground
N01M083WL1A STSOP
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Functional Block Diagram
N01M083WL1A
Address Inputs A0 - A3
Word Address Decode Logic Word Mux Input/ Output Mux and Buffers
Address Inputs A4 - A16
Page Address Decode Logic
16K Page x 16 word x 8 bit RAM Array
I/O0 - I/O7
CE1 CE2 WE OE
Control Logic
Functional Description
CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF
VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc. Absolute Maximum Ratings1
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER
N01M083WL1A
Rating -0.3 to VCC+0.3 -0.3 to 4.5 500 -40 to 125 -40 to +85 240oC, 10sec(Lead only) Unit V V mW
o
C
oC oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 s Cycle Time2 Read/Write Operating Supply Current @ 70 ns Cycle Time2 Page Mode Operating Supply Current @ 70 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) Maximum Standby Current3 Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2 IOH = 0.2mA IOL = -0.2mA VIN = 0 to VCC OE = VIH or Chip Disabled VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.3 V VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC 1.5 10.0 Chip Disabled3 Test Conditions Min. 2.3 1.8 VCC-0.6 -0.3 VCC-0.2 0.2 0.5 0.5 2.0 12.0 VCC+0.3 0.6 Typ1 Max 3.6 Unit V V V V V V A A mA mA
ICC3
4.0
mA
ISB1
2.0
20.0
A
Maximum Data Retention Current3
IDR
10.0
A
1. Typical values are measured at Vcc=Vcc Typ., TA=25C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system.
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Power Savings with Page Mode Operation (WE = VIH)
N01M083WL1A
Page Address (A4 - A17)
Open page ...
Word Address (A0 - A3)
Word 1
Word 2
Word 16
CE1 CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs.
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
NanoAmp Solutions, Inc. Timing Test Conditions
Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature
N01M083WL1A
0.1VCC to 0.9 VCC 5ns 0.5 VCC CL = 30pF -40 to +85 oC
Timing
Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAW tWP tAS tWR tWHZ tDW tDH tOW 50 0 10 15 10 0 0 15 100 70 70 50 0 0 30 40 0 5 30 30 2.3 - 3.6 V Min. 100 100 100 35 10 5 0 0 10 70 50 50 40 0 0 20 20 20 Max. 2.7 - 3.6 V Min. 70 70 70 35 Max. Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
NanoAmp Solutions, Inc.
N01M083WL1A
tRC
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
Address tAA tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC Address
tAA
tHZ
CE1 tCO CE2 tLZ tOE OE tOLZ Data Out High-Z Data Valid tOHZ
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control)
tWC Address tAW CE1 tCW CE2 tAS WE tDW High-Z Data In tWHZ Data Out tWP
N01M083WL1A
tWR
tDH
Data Valid tOW High-Z
Timing Waveform of Write Cycle (CE1 Control)
tWC Address tAW CE1 (for CE2 Control, use inverted signal) tAS tCW tWR
tWP WE tDW Data In tLZ Data Out tWHZ tDH
Data Valid
High-Z
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
NanoAmp Solutions, Inc. 32-Lead STSOP-I Package (N32)
N01M083WL1A
11.800.10 0.50mm REF 8.00.10 0.27 0.17
13.400.20 SEE DETAIL B
DETAIL B
1.100.15
0o-8o 0.20 0.00 0.80mm REF
Note: 1. All dimensions in millimeters 2. Package dimensions exclude molding flash
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
NanoAmp Solutions, Inc. Ordering Information
N01M083WL1A
N01M083WL1AX-XX X
Temperature
I = Industrial, -40C to 85C
Performance
70 = 70ns @ 2.7 volts
Package Type
N = 32-pin STSOP I D = Known good die (KGD)
Revision History
Revision # 01 Date 11/01/02 Change Description Initial Release
(c) 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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