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| C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY PREVIEW This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz. This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V). The same RFIC will be available later in an advanced Microsemi GigamiteTM package, with significantly smaller footprint for applications where board space is at a premium. Advanced InGaP HBT DC to 6GHz Single +5V Supply Small Signal Gain = 16dB P1dB = 19dBm (5V), f=1GHz SOT-89 3-Pin, & Gigamite Packages W W W .Microsemi .COM Broadband Gain Blocks IF or RF buffer Amplifiers Driver Stage for Power Amps Final Power Amp for Low to IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com Medium Power Applications Broadband Test Equipment 45 Gain (dB), Pout (dBm), Current (A)00 40 35 30 25 20 15 10 5 0 -5 -1 0 -2 0 -1 5 -1 0 -5 0 5 P in (d B m ) 10 15 P out G a in C u rre n t f = 5 .7 G H z Vcc = 5 V N o m in a l C u r r e n t 20 m A MWS11-GB11 MWS11-GB11 PK Plastic SOT-89 3 Pin Gigamite MWS11GB11-G1 MWS11GB11-S1 Note: Available in Tape & Reel. Append the letter "T" to the part number. (i.e. MSW11GB11-S89T) Copyright (c) 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 1 C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY PREVIEW DC Supply Voltage..................................................................................................5.0 Vdc Absolute Max. Limit...................................................................................................60mA RF Input Power (Pin)...............................................................................................10 dBm Operating Case Temperature ..........................................................................-40 to +85C Storage Temperature.....................................................................................-60 to +150C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. T a b is GND W W W .Microsemi .COM 1 2 3 R F IN GND RF OUT/ B IA S PK Plastic SOT-89 3-Pin XXC/W PK PACKAGE (Top View) JA THERMAL RESISTANCE-JUNCTION TO CASE, JC THERMAL RESISTANCE-JUNCTION TO LEAD, JT THERMAL RESISTANCE-JUNCTION TO AMBIENT, 149C/W XXC/W Gigamite JA THERMAL RESISTANCE-JUNCTION TO CASE, JC THERMAL RESISTANCE-JUNCTION TO LEAD, JT THERMAL RESISTANCE-JUNCTION TO AMBIENT, XXC/W XXC/W XXC/W Junction Temperature Calculation: TJ = TA + (PD x JA). The JA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. RF IN GND RF Input pin. A DC blocking capacitor should be used in most applications. Ground connection. Traces should be minimized and connect immediately to ground. RF output and bias pin. In the bias network, a resistor is selected to set the DC current into this pin as: RF OUT / BIAS R= (VCC - VD ) ICC PACKAGE DATA PACKAGE DATA Note that maximum current limit ICC must not be exceeded and a resistor should always be used. A DC blocking capacitor should also be used. Copyright (c) 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 2 C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY PREVIEW Unless otherwise specified, the following specifications apply over the operating ambient temperature -40C TA +85C except where otherwise noted. Test conditions: [Enter Test Conditions Here] Parameter Symbol Test Conditions MWS11-GB11-xx Min Typ Max DC 16 34 f=1 GHz f=1.5 GHz 13 3.3 16 4 5 60 6 19 Units W W W .Microsemi .COM POWER SUPPLY Application Frequency Range Linear Output Power rd Output 3 Order Intermod Product* Small-Signal Gain Noise Figure Supply Voltage Supply Current f P1dB IP3 G NF VCC f=2GHz GHz dBm dBm dB dB V mA 3.5 4.6 20 DC to >6000 5.5 11.3 11.3 11.4 11.5 11.5 9.9 0.05 7.6 <1.8:1 <2.5:1 <1.8:1 <2.5:1 34.5 18.5 16.5 OVERALL Frequency Range 1dB Bandwidth T=25C, VD=5.5V, ICC=70mA Freq = 100MHz Freq = 1000MHz Freq = 2000MHz Freq = 3000MHz Freq = 4000MHz Freq = 6000MHz 100MHz to 2000MHz Freq = 1000MHz MHz GHz dB dB dB dB dB dB dB dB Gain 10.2 Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation Freq = 1000MHz Freq = 1000MHz Freq = 1000MHz dBm dBm dB THERMAL Maximum Measured Junction Temp at DC Bias Conditions TA = +85C 142 1.4x10 5 3.4x10 9 1.8x10 3 C Years Years Years TA = +85C Mean Time Between Failures TA = +25C TA = -40C * Output power at 1dB gain compression point, f=1 GHz ELECTRICALS ELECTRICALS In accordance with Manufacturer design Copyright (c) 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 3 C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY PREVIEW W W W .Microsemi .COM Vcc 20 0.01 pF 1.0 F 1 2 3 220 nH 150 pF RF IN 50 strip 150 pF RF OUT 50 strip Vd Vcc 1.0 F 0.01 F 20 100 pF 1 2 3 TL, /4 150 pF RF IN 50 strip 150 pF RF OUT APPLICATION APPLICATION Vd 50 strip Copyright (c) 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 4 C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY PREVIEW W W W .Microsemi .COM PK A K I 3-Pin Plastic TO-89 D Dim A B C D E F G H I J K Note: B J H F E G C MILLIMETERS MIN MAX 4.30 4.70 2.30 2.70 1.30 1.70 0.35 0.45 0.35 0.50 0.30 0.50 1.50 BSC 0.40 0.60 0.50 0.50 3.90 4.30 1.55 1.75 INCHES MIN MAX 0.169 0.185 0.090 0.106 0.051 0.066 0.013 0.017 0.013 0.019 0.011 0.019 0.059 BSC 0.015 0.023 0.019 0.019 0.153 0.169 0.061 0.068 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage. MECHANICALS MECHANICALS Copyright (c) 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 5 C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY PREVIEW W W W .Microsemi .COM NOTES NOTES PRODUCT PREVIEW DATA - Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright (c) 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 6 |
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