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| TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S34U MT4S34U VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS. - Low Noise : Figure : NF=1.2dB(at f=2GHz) - High Gain : |S21e|2=14dB(at f=2GHz) 2.0 0.2 1.3 0.1 1 2 Tentative 2.1 0.1 1.25 0.1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING 6 3 1.5 36 12 100 125 -55-125 UNIT V 4 3 VCBO VCEO VEBO IC IB PC Tj Tstg mA 0 0.1 mA mW deg deg. 1.BASE 2.EMITTER 3.COLLECTOR 4.EMITTER JEDEC EIAJ TOSHIBA - MARKING 2 1 3 4 MICROWAVE CHARACTERISTICS(Ta=25deg.) CHARACTERISTIC SYMBOL TEST CONDITION MIN. 15 TYP. 19 14 1.2 MAX. 17 TBD UNIT GHz dB dB Transition Frequency Insertion Gain Noise Figure fT S21e NF 2 VCE=2V VCE=2V VCE=2V IC=20mA IC=20mA IC=5mA f=2GHz f=2GHz ELECTRICAL CHARACTERISTICS(Ta=25deg.) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance SYMBOL TEST CONDITION MIN. TBD TYP. TBD 0.4 0.2 MAX. 1 1 TBD UNIT uA uA pF pF ICBO IEBO hFE Cob Cre VCB=6V VEB=1V VCE=2V VCB=2V IE=0 IC=0 IC=20mA IE=0 f=1MHz (Note) NOTE : Cre is measured by 3 terminal method with capacitance bridge CAUTION This device is sensitive to electrostatic discharge. Please make each tool and equipment earthed when you handle. 0.7 V 0.95 +0.05 -0 15 V 12 - 0.15 0.05 0.2 +0.1 -0 05 MAXIMUM RATINGS (Ta=25deg.) TOSHIBA MT4S34U Tentative TOSHIBA MT4S34U Tentative TOSHIBA S-Parameter Zo=50ohm, Ta=25deg. VCE=2V, IC=20mA MT4S34U Tentative |
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