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| MS1337 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features * * * * * 175 MHz 12.5 VOLTS POUT = 30W MINIMUM GP = 10 dB GAIN COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Value 36 18 36 4.0 8.0 70 +200 -65 to +150 Unit V V V V A W C C Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 1.2 C/W 053-7069 Rev - 10-2002 MS1337 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) Symbol BVCES BVCEO BVEBO ICBO HFE IC = 15 mA IE = 50 mA IE = 5 mA VCB = 15 V VCE = 5 V STATIC STATIC Test Conditions Min. VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 250 mA 36 18 4.0 --20 Value Typ. ----------- Max. ------5 200 Unit V V V mA --- DYNAMIC Symbol POUT GP Cob f =175 MHz f =175 MHz f =1 MHz Test Conditions Min. PIN = 3.0 W PIN = 3.0 W VCB = 15 V VCE =12.5 V VCE =12.5 V 30 10 --- Value Typ. ------- Max. ----120 Unit W dB pf IMPEDANCE DATA FREQ 175 MHz PIN = 3.0W VCE = 12.5V ZIN() ) 1.0 +j0.4 ZCL() ) 2.3 + j0.1 053-7069 Rev - 10-2002 MS1337 PACKAGE MECHANICAL DATA 053-7069 Rev - 10-2002 |
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