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SPICE MODEL: MMBTA42
MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBTA92) Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 4) Qualified to AEC-Q101 Standards for High Reliability
A C
SOT-23 Dim
B C
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8
A B C D E G H J K L M
B E
TOP VIEW
E
D G H K J L
Mechanical Data
* * * * * * * * Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K3M Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate)
M
*
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG Value 300 300 6.0 500 300 417 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Collector Current (Note 1) (Note 3) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product
Notes:
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 300 300 6.0 25 40 40 50 Max 100 100 Unit V V V nA nA Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0
B
IE = 100A, IC = 0 VCB = 200V, IE = 0 VCE = 6.0V, IC = 0 IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V IC = 20mA, IB = 2.0mA
B
hFE VCE(SAT) VBE(SAT) Ccb fT
0.5 0.9 3.0
V V pF MHz
IC = 20mA, IB = 2.0mA
B
VCB = 20V, f = 1.0MHz, IE = 0 VCE = 20V, IC = 10mA, f = 100MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RJA), power dissipation rating (Pd) and power derating curve (figure 1). 4. No purposefully added lead.
DS30062 Rev. 10 - 2
1 of 3 www.diodes.com
MMBTA42
(c) Diodes Incorporated
400 Note 1 350 PD, POWER DISSIPATION (mW)
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 10 100 TA = -50C TA = 25C IC IB = 10 TA = 150C
300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature
1000
IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
10,000 VCE = 5V
1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs Collector Current
VCE = 5V
hFE, DC CURRENT GAIN
1,000 TA = 150C
TA = -50C
100 TA = -50C 10
TA = 25C
TA = 25C
TA = 150C
1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current
100 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V
10
1 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current 10
DS30062 Rev. 10 - 2
2 of 3 www.diodes.com
MMBTA42
(c) Diodes Incorporated
Ordering Information (Note 5)
Device MMBTA 42-7-F
Notes: 5.
Packaging SOT-23
Shipping 3000/Tape & Reel
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3M
Date Code Key Year 1998 Code J Month Code
YM
K3M = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
1999 K
2000 L Jan 1
2001 M Feb 2
2002 N Mar 3
2003 P Apr 4
2004 R May 5
2005 S Jun 6
2006 T Jul 7
2007 U Aug 8
2008 V
2009 W Sep 9
2010 X Oct O
2011 Y Nov N
2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30062 Rev. 10 - 2
3 of 3 www.diodes.com
MMBTA42
(c) Diodes Incorporated

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