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| MMBT4401WT1 Preferred Device Switching Transistor NPN Silicon Features * Moisture Sensitivity Level: 1 * ESD Rating: Human Body Model; 4 kV, * Pb-Free Package is Available Machine Model; 400 V http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board TA = 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 -55 to +150 Unit mW C/W C 1 2 SC-70 (SOT-323) CASE 419 STYLE 3 MARKING DIAGRAM 2X D 2X = Specific Device Code D = Date Code ORDERING INFORMATION Device MMBT4401WT1 MMBT4401WT1G Package SC-70 SC-70 (Pb-Free) Shipping 3000/T ape & Reel 3000/T ape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 February, 2004 - Rev. 1 Publication Order Number: MMBT4401WT1/D MMBT4401WT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf - - - - 15 20 225 30 ns ns fT Ccb Ceb hie hre hfe hoe 250 - - 1.0 0.1 40 1.0 - 6.5 30 15 8.0 500 30 MHz pF pF kW X 10- 4 - mmhos hFE 20 40 80 100 40 VCE(sat) - - VBE(sat) 0.75 - ICEX - 0.95 1.2 0.1 mAdc 0.4 0.75 Vdc - - - 300 - Vdc - V(BR)CEO V(BR)CBO V(BR)EBO IBEV 40 60 6.0 - - - - 0.1 Vdc Vdc Vdc mAdc Symbol Min Max Unit 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +16 V 0 -2.0 V 1.0 to 100 ms, DUTY CYCLE 2.0% 1.0 kW < 2.0 ns 200 W +16 V 0 CS* < 10 pF -14 V < 20 ns 1.0 to 100 ms, DUTY CYCLE 2.0% 1.0 kW +30 V 200 W CS* < 10 pF -4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 MMBT4401WT1 TRANSIENT CHARACTERISTICS 25C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 QA 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 QT 100C VCC = 30 V IC/IB = 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 Figure 3. Capacitances Figure 4. Charge Data 100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10 100 70 50 30 20 tf tr VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise and Fall Times 300 200 t s, STORAGE TIME (ns) ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns) 100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2 100 70 50 10 7.0 30 10 20 30 50 70 100 200 300 500 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3 MMBT4401WT1 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA 6.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 4.0 2.0 0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS) 50 k 100 k Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4401WT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k 20 k 10 k 5.0 k MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 100 70 50 30 20 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 2.0 k 1.0 k 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 10 hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 20 10 5.0 2.0 1.0 0.1 Figure 12. Input Impedance MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio http://onsemi.com 4 Figure 14. Output Admittance MMBT4401WT1 STATIC CHARACTERISTICS 3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 1.0 25C 0.7 0.5 0.3 0.2 0.1 -55 C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 15. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 TJ = 25C 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region 1.0 TJ = 25C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 0.2 qVB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 qVC for VCE(sat) 0.6 VBE @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 Figure 17. "On" Voltages Figure 18. Temperature Coefficients http://onsemi.com 5 MMBT4401WT1 PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE L A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 S 1 2 B D G C 0.05 (0.002) N K J H STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches SC-70/SOT-323 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MMBT4401WT1/D |
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