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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MHVIC2115R2/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2115R2 wideband integrated circuit is designed for base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover W - CDMA modulation formats. Final Application Typical W - CDMA Performance: - 45 dBc ACPR, 2110 - 2170 MHz, VDD = 27 Volts, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm, 3GPP Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH Power Gain -- 30 dB PAE = 16% Driver Application Typical W - CDMA Performance: - 53 dBc ACPR, 2110 - 2170 MHz, VDD = 26 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz offset, 64 DTCH Power Gain -- 34 dB * Gain Flatness = 0.3 dB from 2110 - 2170 MHz * P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110 - 2170 MHz * Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Temperature Compensation with Enable/Disable Function * Integrated ESD Protection * In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ MHVIC2115R2 2170 MHz, 26 V, 23/34 dBm W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Freescale Semiconductor, Inc... CASE 978 - 03 PFP - 16 Value 65 - 0.5, +15 - 65 to +150 150 Unit Vdc Vdc C C PIN CONNECTIONS VGS3 VGS2 VGS1 Quiescent Current Temperature Compensation N.C. VGS3 VGS2 RFin IC VDS3/RFout VGS1 RFin RFin VDS1 VDS2 3 Stages IC VDS1 VDS2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 N.C. VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout N.C. (Top View) NOTE: Exposed backside flag is source terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987. Rev. 1 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2115R2 1 Freescale Semiconductor, Inc. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = +0.2 W CW) Output Application (Pout = +2.5 W CW) Stage 1, 26 Vdc, IDQ = 96 mA Stage 2, 26 Vdc, IDQ = 204 mA Stage 3, 26 Vdc, IDQ = 111 mA Stage 1, 27 Vdc, IDQ = 56 mA Stage 2, 27 Vdc, IDQ = 61 mA Stage 3, 27 Vdc, IDQ = 117 mA Test Conditions Human Body Model Machine Model Charge Device Model Symbol RJC 3.5 Value Unit C/W 2.7 ESD PROTECTION CHARACTERISTICS Class 1 (Minimum) M1 (Minimum) C2 (Minimum) Freescale Semiconductor, Inc... MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22 - A113 Rating 3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit W - CDMA CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz Power Gain Gain Flatness Input Return Loss Group Delay Phase Linearity 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 23 dBm, 5 MHz Offset 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 28 dBm, 5 MHz Offset Gps GF IRL -- -- ACPR ACPR 31 -- -- -- -- -- -- 34 0.3 - 12 1.7 0.2 - 53 - 50 -- 0.5 - 10 -- -- - 50 -- dB dB dB ns dBc dBc W - CDMA CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm, 2110 - 2170 MHz Power Gain Gain Flatness Input Return Loss Power Added Efficiency 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 34 dBm, 4 MHz Offset Gps GF IRL PAE ACPR -- -- -- -- -- 30 0.2 - 12 16 - 45 -- -- -- -- -- dB dB dB % dBc MHVIC2115R2 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. 1 Vbias3 R3 Vbias2 R2 Vbias1 R1 RF INPUT 16 + C1 C2 3 C3 2 15 C15 14 + C5 4 13 C16 RF OUTPUT C9 + C14 C4 5 12 6 VD1 Quiescent Current Temperature Compensation 11 VD3 10 C17 C18 + + C8 C7 C6 7 + C19 + C20 Freescale Semiconductor, Inc... C21 VD2 + C13 + C12 C11 C10 8 9 C1, C5, C8, C12, C14, C19 C2, C3, C4, C7, C11, C18 C6, C10, C17 C9, C15, C16 1 F SMT Tantalum Chip Capacitors 0.01 F Chip Capacitors (0805C103K5RACTR) 6.8 pF Chip Capacitors, ACCU-P (AVX 08051J6R8BBT) 1.8 pF Chip Capacitors, ACCU-P (AVX 08051J1R8BBT) C13, C20, C21 330 F Electrolytic Capacitors (MCR35V337M10X16) R1, R2, R3 1 k Chip Resistors (0805) PCB Arlon, 0.020, r = 2.55 Figure 1. MHVIC2115R2 Demo Board Schematic Vbias1 R1 Vbias2 R2 Vbias3 R3 VGS C2 C14 C5 C1 MHVIC2115R2 Rev 1 C4 VG1 VG2 VG3 C3 C15 C9 C6 C16 C10 C7 C12 C8 C21 VDD1 C11 C13 VDD2 C17 C18 C19 C20 VDD3 Figure 2. MHVIC2115R2 Demo Board Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2115R2 3 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 50 40 30 S21 (dB) 20 10 0 -10 VDD = 27 Vdc, Pout = 23 dBm CW S11 S21 0 -5 -10 DELAY, (nSEC) -15 -20 -25 -30 S11 (dB) 1.8 1.6 1.4 1.2 -30_C 1 0.8 0.6 0.4 0.2 0 2100 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150 2160 2170 2180 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA -20 -35 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 f, FEQUENCY (MHz) TC = 85_C 25_C f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 3. Broadband Frequency Response Figure 4. Delay versus Frequency 40 39 G ps , POWER GAIN (dB) 38 37 36 35 34 33 32 31 30 2100 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150 2160 2170 2180 85_C 25_C TC = -30_C IRL, INPUT RETURN LOSS (dB) 20 15 TC = 85_C 25_C -30_C 10 5 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 0 2100 2110 2120 2130 2140 2150 2160 2170 2180 f, FREQUENCY (MHz) f, FREQUENCY, (MHz) Figure 5. Power Gain versus Frequency Figure 6. Input Return Loss versus Frequency 40 39 38 G ps , POWER GAIN (dB) 37 36 25_C 35 34 33 32 31 30 20 VDD = 27 Vdc, f = 2140 MHz IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 25 30 35 40 45 85_C 70 65 TC = -30_C TC = 25_C S21 PHASE(_) 60 -30_C 55 50 85_C 45 40 20 VDD = 27 Vdc, f = 2140 MHz IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 25 30 35 40 45 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 7. Power Gain versus Output Power Figure 8. S21 Phase versus Output Power MHVIC2115R2 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 15 17 19 21 23 25 27 29 2140 MHz 2170 MHz 2110 MHz IMR (dBc) VDD = 27 Vdc 3GPP Test Model 1 64 DPCH -40 -45 -50 -55 3rd Order -60 -65 5th Order 33 35 -70 2000 2050 2100 2150 122 mA 2200 2250 2300 111 mA 100 mA VDD = 27 Vdc Pout = 23 dBm Two-Tone Avg. Tone Spacing = 100 kHz IDQ3 = 100 mA 122 mA 31 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 9. W - CDMA ACPR versus Output Power Figure 10. Two - Tone IMR versus Frequency IMD, INTERMODULATION DISTORTION (dBc) -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 0 5 10 15 20 25 TONE SPACING (MHz) VDD = 27 Vdc, f = 2140 Pout = 23 dBm, Two-Tone Avg. 5th Order 3rd Order Vbias, FIXTURE BIAS VOLTAGE (V) 6.00 5.75 5.50 5.25 5.00 4.75 4.50 4.25 4.00 VBIAS1 VBIAS2 VDD = 27 Vdc R1 = R2 = R3 = 1000 Ohms VBIAS3 3.75 3.50 3.25 3.00 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 T, TEMPERATURE (C) Figure 11. Two - Tone Broadband Performance Figure 12. Fixture Bias versus Temperature 4.20 4.10 Vgs, IC GATE BIAS VOLTAGE (V) 4.00 3.90 3.80 3.70 3.60 3.50 3.40 3.30 3.20 -40 -30 -20 -10 0 10 20 30 40 Igs3 Vgs3 VDD = 27 Vdc R1 = R2 = R3 = 1000 Ohms Vgs1 & Vgs2 Igs1 & Igs2 2.00 1.80 Igs, GATE BIAS CURRENT (mA) 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 50 60 70 80 90 100 T, TEMPERATURE (C) Figure 13. Gate Bias versus Temperature MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2115R2 5 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Zo = 50 f = 2170 MHz Zload f = 2110 MHz f = 2170 MHz Zin f = 2110 MHz VDD = 27 Vdc, IDQ = 1411 mA, Pout = 15 W Avg. f MHz 2110 2140 2170 Zin Zin 72.55 + j12.8 71.40 + j9.9 70.20 + j7.1 Zload 4.25 + j1.00 4.13 + j1.37 4.12 + j1.46 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 14. Series Equivalent Input and Load Impedance MHVIC2115R2 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2115R2 7 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100 D e/2 D1 8 9 E1 8X B BOTTOM VIEW E CB S bbb M Freescale Semiconductor, Inc... Y A A2 DATUM PLANE SEATING PLANE c H aaa C SECT W - W L1 ccc C q W W L 1.000 0.039 DETAIL Y A1 GAUGE PLANE CASE 978 - 03 ISSUE B PFP- 16 Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MHVIC2115R2 8 For More Information On This Product, Go to: www.freescale.com CC EE CC CC b M b1 c1 CA S DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MOTOROLA RF DEVICE DATA MHVIC2115R2/D |
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