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| MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. N I 3 M . 2 0 / + 4 . 7 1 N I M 2 4 . 0 / + 0 . 4 R1.25 2 . 0 R1.2 / + 0 . 8 24+/-0.3 (1) 0.6+/-0.15 OUTLINE DRAWING Unit: millimeters FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 13 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Min.) @Po=32dBm S.C.L. (2) 8 . 5 1 (3) 20.4+/-0.2 13.4 1 . 0 4 . 1 APPLICATION item 01 : 3.4 - 3.6 GHz band power amplifier item 51 : 3.4 - 3.6 GHz band digital ratio communication 2 . 0 / + 4 . 2 QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 4.5 (A) RG=25 (ohm) GF-18 (1): GATE (2): SOURCE (FLANGE) (3): DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1 : Tc=25deg.C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1 (Ta=25deg.C) Ratings -15 -15 12 -40 84 78.9 175 -65 / +175 Unit V V A mA mA W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 Rth(ch-c) (Ta=25deg.C) Test conditions Min. VDS = 3V , VGS = 0V VDS = 3V , ID = 4.4A VDS = 3V , ID = 80mA 41.5 VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz 12 Limits Typ. 11 4 42.5 13 4.5 37 -45 Unit Max. -4.5 1.9 A S V dBm dB A % dBc deg.C/W Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *1 *2 -42 delta Vf method - *1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz *2 : Channel-case MITSUBISHI ELECTRIC Sep. 1998 MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP vs. f OUTPUT POWER P1dB (dBm) Po,PAE vs. Pin OUTPUT POWER Po(dBm) 45 44 43 42 VDS=10(V) IDS=4.5(A) P1dB 19 18 17 LINEAR POWER GAIN GLP(dB) 45 VDS=10(V) IDS=4.5(A) f=3.5(GHz) 100 Po 90 80 70 POWER ADDED EFFICIECY PAE(%) 40 35 60 50 16 GLP 30 PAE 40 30 41 40 39 3.3 3.4 3.5 FREQUENCY f(GHz) 15 14 13 3.6 3.7 25 20 10 20 10 15 20 25 30 35 0 INPUT POWER Pin (dBm) Po,PAE vs. Pin OUTPUT POWER Po(dBm) 45 VDS=10(V) IDS=4.5(A) f=3.5(GHz) 100 Po 90 80 70 POWER ADDED EFFICIECY PAE(%) 40 35 60 50 30 PAE 40 30 25 20 10 20 10 15 20 25 30 35 0 INPUT POWER Pin (dBm) S parameters ( Ta=25deg.C , VDS=10(V),IDS=4.5(A) ) S-Parameters (TYP.) f (GHz) 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 Magn. 0.43 0.30 0.25 0.23 0.30 0.36 0.39 0.42 0.43 S11 Angle(deg) -19 -56 -80 -138 -179 154 143 126 118 Magn. 4.592 5.044 5.124 5.188 5.114 4.895 4.758 4.546 4.433 S21 Angle(deg) 133 112 103 82 63 45 37 21 14 Magn. 0.04 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 S12 Angle(deg) 74 55 42 21 4 -20 -29 -43 -52 Magn. 0.40 0.31 0.26 0.20 0.18 0.19 0.20 0.24 0.25 S22 Angle(deg) 10 -14 -26 -59 -96 -129 -139 -157 -163 MITSUBISHI ELECTRIC Sep. 1998 |
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