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| Fast Recovery Epitaxial Diode (FRED) Module Preliminary data VRSM V 1200 VRRM V 1200 Type MEA75-12 DA 1 2 3 MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA VRRM = 1200 V IFAV = 75 A trr = 250 ns TO-240 AA 1 3 2 MEK 75-12 DA 1 2 3 MEE 75-12 DA 1 2 3 Symbol IFRMS IFAV IFRM IFSM Test Conditions Tcase= 75 C Tcase= 75 C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 107 75 TBD 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s C C C W V~ V~ TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg THmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 100 A; IF = 300 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ TVJ TVJ TVJ = 125C = 25C = 125C = 25C Tcase = 25C 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Mounting torque (M5) Terminal connection torque (M5) Creep distance on surface Strike distance through air Maximum allowable acceleration 280 3000 3600 Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders q q q q q 2.50-4/22-35 Nm/lb.in. 2.50-4/22-35 Nm/lb.in. 12.7 9.6 50 90 mm mm m/s2 g Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses q q q q Characteristic Values (per diode) typ. max. 2 0.5 34 1.85 2.17 2.58 2.64 1.48 3.65 0.550 0.450 TVJ = 100C TVJ = 25C TVJ = 100C 250 300 22 33 mA mA mA V V V V V m K/W K/W ns A A Dimensions in mm (1 mm = 0.0394") VF For power-loss calculations only DC current DC current IF = 150 A VR = 600 V -di/dt = 200 A/s Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved D6 - 5 015 MEA 75-12 DA MEE 75-12 DA MEK 75-12 DA 200 A 175 IF 150 125 100 75 50 25 0 0 1 V 2 VF 3 0 10 100 A/s 1000 -diF/dt 0 0 200 400 600 A/s 1000 800 -diF/dt 4 40 TVJ=125C TVJ= 25C TVJ= 100C C VR = 600V 10 100 IF= 150A IF= 100A IF= 70A TVJ= 100C A V = 600V R Qr 8 IRM 80 IF= 150A IF= 100A IF= 70A 6 60 2 20 Fig. 1 Forward current IF versus voltage drop VF per leg 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 350 ns TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 100 A 80 VFR 60 tfr VFR 2.0 s 1.6 tfr 1.2 Kf 1.0 IRM Qr trr 300 IF= 150A IF= 100A IF= 70A 1.2 250 0.8 40 0.8 0.6 200 20 TVJ= 100C IF = 150A 0.4 0.4 0 50 100 TVJ C 150 150 0 200 400 600 A/s 1000 800 -diF/dt 0 0 200 400 600 800 diF/dt 0.0 1000 A/s Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ 0.6 K/W 0.5 0.4 ZthJH 0.3 0.2 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJH calculation: i 1 2 3 4 Rthi (K/W) 0.037 0.138 0.093 0.282 ti (s) 0.002 0.134 0.25 0.274 75-12 DA 0.0 0.001 0.01 0.1 1s Fig. 7 Transient thermal impedance junction to heatsink t 10 D6 - 6 (c) 2000 IXYS All rights reserved 016 |
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