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MAC4M, MAC4N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. * Blocking Voltage to 800 Volts * On-State Current Rating of 4.0 Amperes RMS at 100C * Uniform Gate Trigger Currents in Three Modes * High Immunity to dv/dt -- 500 V/s minimum at 125C * Minimizes Snubber Networks for Protection * High Surge Current Capability - 40 Amperes * Industry Standard TO-220AB Package * High Commutating di/dt -- 6.0 A/ms minimum at 125C * Operational in Three Quadrants: Q1, Q2, and Q3 * Device Marking: Logo, Device Type, e.g., MAC4M, Date Code
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TRIACS 4 AMPERES RMS 600 thru 800 VOLTS
MT2 G
MT1
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4M MAC4N On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width 1.0 s, TC = 100C) Average Gate Power (t = 8.3 ms, TC = 100C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 4.0 Amps 1 2 Value Unit Volts 4
3
ITSM
40
Amps
TO-220AB CASE 221A STYLE 4
I2t PGM PG(AV) TJ Tstg
6.6 0.5 0.1 - 40 to +125 - 40 to +150
A2sec Watt Watt C C 1 2 3 4
PIN ASSIGNMENT
Main Terminal 1 Main Terminal 2 Gate Main Terminal 2
ORDERING INFORMATION
Device MAC4M MAC4N Package TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 1999
1
February, 2000 - Rev. 1
Publication Order Number: MAC4M/D
MAC4M, MAC4N
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Value 2.2 62.5 260 Unit C/W C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 125C IDRM, IRRM mA -- -- -- -- 0.01 2.0
ON CHARACTERISTICS
Peak On-State Voltage(1) (ITM = 6.0 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) Latching Current (VD = 12 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VTM IGT 8.0 8.0 8.0 IH IL -- -- -- VGT 0.5 0.5 0.5 0.8 0.8 0.8 1.3 1.3 1.3 25 40 20 60 80 60 V 6.0 12 16 21 20 35 35 35 35 mA mA -- 1.3 1.6 V mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/s, Gate Open, TJ = 125C, f = 250 Hz, CL = 5.0 F, LL = 20 mH, No Snubber) Critical Rate of Rise of Off-State Voltage (VD = 0.67 x Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 sec; diG/dt = 200 mA/sec; f = 60 Hz (1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (di/dt)c 6.0 8.4 -- A/ms
dv/dt
500
1500
--
V/s
di/dt
--
--
10
A/s
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MAC4M, MAC4N
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 - IRRM at VRRM on state
VTM IH
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT - (-) MT2 (-) MT2
+ IGT
Quadrant III
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant IV
- MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used.
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MAC4M, MAC4N
IGT, GATE TRIGGER CURRENT (mA) 100 VGT, GATE TRIGGER VOLTAGE (VOLTS) Q2 Q3 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) Q2 Q1 Q3
10
Q1
1 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C)
Figure 1. Typical Gate Trigger Current versus Junction Temperature
100 IL , LATCHING CURRENT (mA) Q2 Q1 Q3 100 IH, HOLDING CURRENT (mA)
Figure 2. Typical Gate Trigger Voltage versus Junction Temperature
MT2 Positive
MT2 Negative 10
10
1 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C)
1 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C)
Figure 3. Typical Latching Current versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS) 125 TC , CASE TEMPERATURE (C) 6
Figure 4. Typical Holding Current versus Junction Temperature
DC 5 4 90 3 2 1 0 60 30 180 120
120
115 60 110 90 120 180 105
30
DC 0 0.5 1 1.5 2 2.5 3 3.5 IT(RMS), RMS ON-STATE CURRENT (AMPS) 4
0
1 2 3 0.5 1.5 2.5 3.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
4
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
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MAC4M, MAC4N
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Maximum @ TJ = 25C Typical @ TJ = 25C Maximum @ TJ = 125C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 1
10
0.1
1
0.01 0.1
1
10 100 t, TIME (ms)
1000
10000
Figure 8. Typical Thermal Response
0.1 0 1 2 3 4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
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MAC4M, MAC4N
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE Z
-T- C T
4
SEATING PLANE
S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 4: PIN 1. 2. 3. 4.
MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2
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MAC4M, MAC4N
Notes
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MAC4M, MAC4N
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MAC4M/D

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