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| Amplifier, Power, 12W 2.0-6.0 GHz Features 12 Watt Saturated Output Power Level Variable Drain Voltage (8-10V) Operation MSAGTM Process MAAPGM0078-DIE Rev B Preliminary Datasheet Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Also Available in: Description Part Number Ceramic Package MAAP-000078-PKG001 Sample Board (Die) MAAP-000078-SMB004 Radio Communications SatCom Radar EW Mechanical Sample (Die) MAAP-000078-MCH000 Sample Board (Pkg) MAAP-000078-SMB001 Electrical Characteristics: TB = 55C1, Z0 = 50 , VDD = 10V, IDQ = 2.8A2, Pin = 24 dBm, RG=30 Parameter Bandwidth Output Power 1-dB Compression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Gate Current Drain Current, under RF Drive 2nd Harmonic (4 GHz) 2nd Harmonic (6 GHz) 1. 2. Symbol f POUT P1dB G PAE VSWR VSWR IGG IDD 2f 2f Typical 2.0-6.0 41 40 20 28 1.4:1 2.3:1 30 4.1 30 67 mA A dBc dBc Units GHz dBm dBm dB % 1 TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.5V to achieve specified Idq. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz Maximum Ratings3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 29 +12.0 -3.0 4.5 45.1 170 -55 to +150 MAAPGM0078-DIE Rev B Preliminary Datasheet Units dBm V V A W C C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN JC TB Min 8.0 -2.6 Typ 10.0 -2.2 24.0 2.9 Note 5 Max 10.0 -1.5 26 Unit V V dBm C/W C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * IDQ Power Derating Curve, Quiescent (No RF) 50 45 Peak Power Dissipation (W) 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 180 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2.2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. MMIC Base Temperature (C) * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz 50 47 44 41 50 45 40 35 30 25 20 15 10 Pout PAE 5 20 MAAPGM0078-DIE Rev B Preliminary Datasheet All Data is at 55C MMIC base temperature, CW stimulus, unless otherwise noted. 50 47 44 41 Pout (dBm) PAE (%) 38 35 32 29 26 23 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 P1dB (dBm) 38 35 32 29 26 23 6V 8V 10V 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Frequency (GHz) Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS Figure 1. Output Power and Power Added Efficiency at VD = 10V, Pin = 24dBm, and 25% IDSS 50 47 44 41 50 47 44 41 Psat (dBm) Psat (dBm) 38 35 32 29 26 23 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 6V 8V 10V 38 35 32 29 26 23 20 2.00 10C 55C 110C 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 Frequency (GHz) Frequency (GHz) Figure 3. Saturated Output Power vs. Frequency and Drain Voltage at 25% IDSS Figure 4. Saturated Output Power vs. Frequency and Temperature at 10V and 25% IDSS 30 28 26 6 50 46 5.3 5.2 5.1 5.0 4.9 4.8 4.7 4.6 Pout SSG PAE IDS 4.5 4.4 4.3 150 22 20 Output Power (dBm), SSG(dB), PAE (%) 24 5 42 38 34 30 26 22 18 14 Gain (dB) 18 16 14 12 10 8 6 4 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Gain Input VSWR Output VSWR 4 3 2 1 10 30 40 50 60 70 80 90 100 110 120 130 140 Frequency (GHz) Junction Temperature (C) Figure 5. Small Signal Gain and Input and Output VSWR at 25% IDSS, VD = 10V Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 10V, 4 GHz, and 25% IDSS 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Drain Current (A) VSWR Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet All Data is at 55C MMIC base temperature, CW stimulus, unless otherwise noted. 45 43 41 39 37 21 19 25 23 Output Power (dBm) 35 31 29 27 25 23 21 19 17 15 4 6 8 10 12 14 16 18 20 22 24 26 28 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz Gain (dB) 33 17 15 13 11 9 7 5 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 2 GHz 4 GHz 6 GHz Input Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS Output Power (dBm) Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS 50 45 40 35 30 25 20 15 10 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 6.0 5.5 5.0 4.5 Drain Current (A) PAE (%) 4.0 3.5 3.0 2.5 2.0 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 5 1.5 0 4 6 8 10 12 14 16 18 20 22 24 26 28 1.0 4 6 8 10 12 14 16 18 20 Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and 25% IDSS 22 24 26 28 Input Power (dBm) Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS 45 43 41 39 37 25 23 21 19 17 15 13 11 9 7 2 GHz 4 GHz 6 GHz Output Power (dBm) 35 31 29 27 25 23 21 19 17 15 4 6 8 10 12 14 16 18 20 22 24 26 28 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz Gain (dB) 33 5 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Input Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS Output Power (dBm) Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet All Data is at 55C MMIC base temperature, CW stimulus, unless otherwise noted. 50 45 40 35 30 25 20 15 10 2.0 5 1.5 0 4 6 8 10 12 14 16 18 20 22 24 26 28 1.0 4 6 8 10 12 14 16 18 20 22 24 26 28 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 6.0 5.5 5.0 4.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz Drain Current (A) Input Power (dBm) PAE (%) 4.0 3.5 3.0 2.5 Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and 25% IDSS Input Power (dBm) Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS 100 90 80 4 dBm 8 dBm 12 dBm 16 dBm 20 dBm 24 dBm Harmonic (dBc) 2 nd 70 60 50 40 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Figure 15. Second Harmonic vs. Frequency and Input Power at 10V and 25% IDSS Figure 16. Fixture used to characterize MAAPGM0078-DIE under CW stimulus. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz Mechanical Information Chip Size: 5.000 x 6.346 x 0.075 mm (197 x 250 x 3 mils) MAAPGM0078-DIE Rev B Preliminary Datasheet Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 17. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VD1 DC Drain Supply Voltage VD2 DC Gate Supply Voltage VG1 DC Gate Supply Voltage VG2 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Size (m) 100 x 200 200 x 150 500 x 200 150 x 150 150 x 125 Size (mils) 4x8 8x6 20 x 8 6x6 6x5 * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz Assembly and Bonding Diagram VDD VGG Gnd RF 100200 pF 100200 pF 100200 pF MAAPGM0078-DIE Rev B Preliminary Datasheet VDD 0.010.1 F Thermal Management is critical on this part. Refer to Application Note AN3019 for applicable guidelines. NOTE 1: All Application Notes may be accessed by going to http://www.macom.com/ Application%20Notes/index.htm. NOTE 2: In implementing the DC/ RF crossover shown, the following rules must applied. 1. 2. 3. 4. the DC crossovers should approach and cross the RF trace at a 90 degree angle; the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge; the rated current capability of the DC crossovers should be greater than the maximum current of the device; and the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height. 100200 pF Gate Crossover Drain Crossover RFIN RFOUT 100200 pF 100200 pF 100200 pF 100200 pF 30 VGG 0.010.1 F GND Figure 18. Recommended operational configuration. Wire bond as shown. Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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