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| LX5560 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET DESCRIPTION KEY FEATURES 0.5m InGaAs E-mode pHEMT 4.9 - 6GHz Operation Single 3.3V Supply Gain ~ 12dB Noise Figure ~ 1.7dB Input IP3 ~ +6dBm Input P1dB ~ +2dBm On-Chip Bias Circuit On-Chip Input Match Simple Output Match 2x2mm MLPQ 12 Pin Low Profile 0.5mm APPLICATIONS The LX5560 is a low noise amplifier (LNA) for WLAN applications in the 4.9-6.0 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure(NF) of 1.7dB while maintaining input third order intercept point(IIP3) of up to +6dBm. The LNA is implemented with bias circuit and input matching circuit on chip, resulting in simple external circuit. In addition, the on-chip bias circuit provides stable performance of gain, NF and current for voltage variation compared to a general resistor-network bias circuit. The LX5560 is available in a 12-pin 2mmx2mm micro-lead package(MLPQ12L). WWW .Microsemi .C OM BLOCK DIAGRAM Vdd Wireless LAN 802.11a WiMax Bias Circuit RF Input RF Output Input Match IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com PRODUCT HIGHLIGHT * 560 645 LX5560 LX5560 PACKAGE ORDER INFO LL Plastic MLPQ 12 pin RoHS Compliant / Pb-free LX5560LL Note: Available in Tape & Reel. Append the letters "TR" to the part number. (i.e. LX5560LL-TR) Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5560 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF Off............................................................................................4 V Drain Current ............................................................................................................ 40 mA Total Power Dissipation............................................................................................0.15 W RF Input Power..................................................................................................... +10 dBm Operation Ambient Temperature Range ..................................................... -40C to +85C Storage Temperature Range.........................................................................-65C to 150C Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ... 260C (+0 -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. PACKAGE PIN OUT WWW .Microsemi .C OM 10 N/C N/C RF OUT N/C 11 N/C 12 1 2 GND 3 VDD N/C RF IN N/C 4 9 8 7 6 5 N/C N/C LL PACKAGE (Bottom View) RoHS / Pb-free NiPdAu Lead Finish FUNCTIONAL PIN DESCRIPTION Name RF IN RF OUT VDD GND N/C Pin # 2 8 12 Center Metal 1,3,4,5,6,7, 9,10,11 Description RF Input for the low noise amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor gate. RF Output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. Supply Voltage. The center metal base of the MLP package provides both DC and RF ground. Not Used. They may be treated either as open pins or connected to the ground. N/C PACKAGE DATA PACKAGE DATA Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5560 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET ELECTRICAL CHARACTERISTICS Nominal test conditions: VDD = 3.3V, IDD = 9.5mA, TA = 25C (Room Temperature) Parameter Application Frequency Range Small-Signal Gain Noise Figure Input 3rd Order Intercept Point Input P1dB Input Return Loss Output Return Loss Supply Voltage Supply Current Symbol f S21 NF IIP3 IP1dB S11 S22 VDD IDD Test Conditions LX5560 Typ 12 1.7 6 2 9 10 3.3 9.5 Units GHz dB dB dBm dBm dB dB V mA WWW .Microsemi .C OM Min 4.9 Max 6 2.1 Room Temperature Freq. 1 = 5.25 GHz, Freq. 2 = 5.27 GHz Freq. = 5.5 GHz ELECTRICALS ELECTRICALS Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5560 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET S-PARAMETER S11 20 10 S11, S12, S21, S22 (dB) 0 -10 -20 -30 -40 0 1 2 3 4 5 6 7 Frequency (GHz) S21 (dB) GAIN OVER TEMP S22 15 14 -40C 13 12 +25C 11 10 9 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) +85C 3.0V 3.3V 3.6V WWW .Microsemi .C OM S12 S21 Typical S-Parameter Data at Room Temperature (Vdd = 3.3V, Idd = 9.5mA at Room Temperature) NOISE FIGURE OVER TEMP 3.0V 2.5 +85C Noise Figure (dB) 2 Idd (mA) CURRENT OVER TEMP -40C 15 14 13 12 +25C +85C 3.3V 3.6V +25C 1.5 -40C 1 11 10 9 8 7 6 0.5 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) 5 3 3.1 3.2 3.3 Vdd (V) 3.4 3.5 3.6 INPUT P1DB (+25C) 3.0V 5 4 IP1dB (dBm) 3 2 1 0 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) IIP3 (dBm) INPUT IP3 (+25C) 3.0V 12 11 10 9 8 7 6 5 4 3 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) 3.3V 3.6V 3.3V 3.6V CHARTS CHARTS Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5560 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET POWER SWEEP @ 5.5GHz Pout 20 15 Pout (dBm), Gain (dB) 10 5 0 -5 -10 -15 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Gain Idd 35 30 25 20 15 10 5 0 Idd (mA) WWW .Microsemi .C OM Pin (dBm) (Vdd=3.3V, Idq=9.5mA at Room Temperature) CHARTS CHARTS Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5560 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET APPLICATION SCHEMATIC WWW .Microsemi .C OM BOM LIST Reference Designator C1 C2 C3 L1 R1 Part Description Capacitor, 1 pF Capacitor,1 F Capacitor,10 F Inductor, 1.5 nH (TOKO : LL1005-FH1N5S) Resistor, 30 Ohm Case 0402 0603 0805 0402 0402 NOTES It is recommended to place C1 at ~30mil from MLP package outline. It is recommended to place L1 at ~30mil from MLP package outline. C2 and C3 are used for standalone evaluation board test only. They can be replaced with a 1nF(0402) in final applications. APPLICATIONS APPLICATIONS Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5560 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET PACKAGE DIMENSIONS WWW .Microsemi .C OM LL 12-Pin MLPQ Plastic (2x2mm) D D2 Dim A A1 A3 b D D2 E E2 e L Note: E L e A A1 A3 b E2 MILLIMETERS MIN MAX 0.40 0.50 0.00 0.05 0.15 REF 0.15 0.25 2.00 BSC 0.77 1.02 2.00 BSC 0.77 1.02 0.40 BSC 0.19 0.39 INCHES MIN MAX 0.016 0.020 0.000 0.002 0.006 REF 0.006 0.010 0.079 BSC 0.030 0.040 0.079 BSC 0.030 0.040 0.016 BSC 0.007 0.015 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage. MECHANICALS MECHANICALS Recommended Land Pattern Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5560 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET NOTES WWW .Microsemi .C OM NOTES NOTES PRODUCTION DATA - Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reverses the right to change the configuration and performance of the product and to discontinue product at any time. Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 |
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